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研究生:陳偉今
論文名稱:準分子雷射與感應耦合離子蝕刻應用在散熱晶片之研發
論文名稱(外文):The Excimer Laser and The Inductively Coupled Plasma Etching in the Development of Micro Chip Heat Pipe
指導教授:王金樹王金樹引用關係
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:100
中文關鍵詞:準分子雷射感應耦合離子蝕刻散熱晶片
外文關鍵詞:Excimer LaserICPMicro Chip Heat Pipe
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本論文主要目的,在提出晶片型熱管之設計與製程。製程上利用準分子雷射光刻術與配合感應耦合離子蝕刻,首次結合此兩項技術,於矽晶片上加工出微溝槽流道。論文中設計之晶片型熱管,其微流道包含三角形與矩形的微溝槽。三角形微溝槽設計為溝槽寬度40μm、夾角60度的等腰三角形。矩形微溝槽設計有二,一為寬40μm、深10μm的矩形溝槽,另一為寬20μm、深155μm的矩形溝槽。
  實驗設計的微流道有上述三角形與矩形的微溝槽三種,為了加工出所需的微流道,需先於光阻上光刻出三角形與矩形的微結構。利用準分子雷射於光阻上光刻所需的微結構,首先光罩設計,寬度400μm夾角30度至90度的透光等腰三角形、400μm×100μm與200μm×1550μm的透光矩形。光罩上三角形多角度的設計,其目的在於利用各角度之曝光量不同,可尋找最佳三角微結構之光刻參數。實驗中吾人發現以90度的透光等腰三角形,雷射出口能量為200mJ、拖拉加工速度為5.5mm/min,於光阻(AZ 1500)上光刻出三角微結構溝槽寬度40μm、深度為0.4312μm為最佳之製程條件,且可滿足蝕刻60度等腰三角形微溝槽所需的微結構.。另外亦以透光矩形,雷射出口能量為200mJ,於光阻(AZ 1500)上光刻出20μm× 1.669μm的矩形溝槽之微通道結構。
  本實驗再利用感應耦合離子蝕刻,將光阻圖形以選擇比(80:1)轉移至矽基材上。吾人發現三角溝槽部分有草狀物(grass-like)存在,可能是由於傾斜面之光阻,有不同之電漿吸收性所造成,此現象吾人首度提出,可提供製程之研究與改善。
  特定角度之三角溝槽未來研究發展甚為重要,本研究將可作為未來研究三角溝槽角度之參考。

  This thesis is to propose the chip type heat pipe design and manufacture. In the manufacture process make use both the Excimer Laser and Inductively Coupled Plasma (ICP) etching technology. It is the first time to combine these two technique and applying to etch micro channel in Si wafer. The triangle and rectangle micro channel in this thesis. The dimensions of triangle micro channel is designed an isosceles triangle with width 40μm , included 60 angle. The dimensions of rectangle micro channel is designed 40μm×10μm and 20μm×155μm.
In the first step, we construct three type of Micro channel Structure in the photo resist by Excimer laser. We construct the mask have 400μm width, 30°to90°isosceles triangle、400μm×100μm and 200μm×1550μm rectangle. We find the optimal etching parameter for the 60°triangle channel by using the different angle triangle which exposed different laser power in the mask. We get the optimal parameter is 90°isosceles triangle、200mJ laser power、dragging 5.5mm/min for the 40μm width、0.4312μm depth in the AZ 1500. The shape etched by ICP, we can get near 60°triangle micro channel structure. The 20μm×1.669μm rectangle structure also can be constructed by this method.
The ICP will transfer the shape of photo resist to the Si wafer by selection ratio(80:1). We find the grass-like structure in the triangle channel. It could be generated by the inclined plane in photo resist, which result from different absorb by plasma. We find the grass-like’s phenomenon in the first time during the combined Excimer Laser and ICP process.
  In the future, the different angle of triangle channel will be deviced by using in the MEMS or bio chip. We hope this thesis could be referenced in this research.

目 次
授權書
審定書
摘要iii
誌謝v
目次vi
表目錄Viii
圖目錄ix
符號說明xii
第一章 緒 論1
1-1前 言1
1-2 研究動機及目的4
1-3文獻回顧5
第二章晶片型熱管之設計與製造16
2-1晶片型熱管設計16
2-1-1 工作流體選擇16
2-1-2 容器選擇17
2-1-3 毛細結構設計18
2-1-4 工作流體填充量20
2-2晶片型熱管製造21
2-2-1 微溝槽製作21
2-2-2 封裝24
第三章 準分子雷射光刻術34
3-1準分子雷射34
3-1-1 準分子雷射激發原理34
3-1-2 準分子雷射簡介36
3-2光阻微結構之製造37
3-2-1 準分子雷射加工機制37
3-2-2 準分子雷射光刻方式38
3-2-3 準分子雷射光刻程序39
3-2-4 微結構製作影響參數40
3-3工作參數42
第四章感應耦合電漿蝕刻51
4-1乾式蝕刻51
4-2各種電漿蝕刻系統之原理53
4-2-1 活性離子蝕刻系統(RIE)54
4-2-2 電子迴旋共振系統(ECR)56
4-2-3 感應耦合電漿蝕刻系統(ICP)56
4-3感應耦合電漿蝕刻機簡介60
4-4矽深蝕刻製程63
4-4-1 電漿蝕刻機制63
4-4-2 Bosch交替蝕刻鈍化矽深蝕刻65
4-4-3 傳統式與高密度電漿蝕刻比較69
4-5影響ICP電漿蝕刻參數71
第五章實驗結果分析與討論72
5-1微溝槽製程參數探討72
5-2微溝槽尺寸量測與現象74
第六章結 論88
參考文獻90
附 錄94
A毛細結構設計94
B去除草狀物結構96

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