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研究生:林玉燕
研究生(外文):Yu Yen Lin
論文名稱:晶種預芽技術對碳化鎢(WC-Co)基材成長鑽石膜性質之影響
論文名稱(外文):Effects of diamond film properties about seeding germination on WC/Co substrate.
指導教授:林啟瑞林啟瑞引用關係
指導教授(外文):Chii Ruey Lin
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:99
中文關鍵詞:晶種預芽鑽石膜微波電漿化學氣相沈積法應變能殘留應力碳化鎢
外文關鍵詞:seeding germinationdiamond filmMPCVDstrain energyresidual stressWCtungsten carbide
相關次數:
  • 被引用被引用:7
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摘 要
本研究是以奈米級的鑽石超微粉為成長鑽石膜的晶種(seeds),藉以探討基材前處理、晶種預芽及基材含鈷量對鑽石膜成核、成長及品質的影響。實驗採用微波電漿化學氣相沈積法(microwave plasma chemical vapor deposition, MPCVD)以CH4和H2為反應氣體,在燒結碳化鎢基材上沈積鑽石膜。
綜合實驗結果歸納以下幾點結論:
(1)鑽石晶種預芽,確實有助於鑽石的成核與完美晶形的形成。即使在鑽石成核、成長不易的碳化鎢基材上,透過此種方式,也能長出品質接近天然鑽石的鑽石膜。
(2)由於鑽石品質的提升,成核密度增加,接觸面積變多,鑽石膜殘留應力隨著變低,因此有助於附著性的提高。
(3)奈米級的鑽石超微粉填塞於表面去鈷的空間,造成晶種預芽,形成錨釘作用,有助於附著性的提高。
ABSTRACT
This study investigated the effect on diamond film nucleation, growth and quality by variant substrate pretreatments, seeding germination, and various cobalt removed cavities seeded with nano-diamonds. MPCVD method was applied to deposit the diamond films on the WC/Co substrates with Methane and hydrogen reaction gas.
The experimental results indicate the following conclusions:
1.Diamond seeding germinations boost the nucleation of diamond and enhance the formation of perfect crystal. Tungsten carbide known to be difficult for diamond growth and nucleation, but using this method it can grow the extreme best quality diamond films which quality approximate natural diamond.
2.Adhesion of the diamond films were promoted accompanying the lower residual stress caused by the high quality and high nucleation density of diamond films
3.The anchoring effect of the seeding germination due to the advance nano-diamonds into the cavities WC/Co substrate surface strengthen the adhesion of diamond films with the WC/Co substrate.
目 次
中文摘要 .……………………………………………………….iii
英文摘要.……………………………………………………….iv
誌謝 .……………………………………………………………v
目次 .……………………………………………………………vi
表目錄 .………………………………………………………….viii
圖目錄 ..…………………………………………………………ix
第一章 緒綸 .……………………………………………….. 1
1.1 前言 .………………………………………………… 1
1.2 鑽石薄膜在工業上的應用及重要性………………… 5
1.3 在碳化鎢基材上成長鑽石薄膜的困難度…………… 7
第二章 理論基礎與文獻回顧…………………………………. 9
2.1 碳的結構……………………………………………… 9
2.2 微波電漿輔助合成鑽石膜原理………………………12
2.3 鑽石膜的成核與成長原理……………………………18
2.3.1 CVD鑽石膜的成長模式………………………18
2.3.2 晶種預芽前處理促進鑽石膜的成核機制……20
2.3.3 CVD鑽石之成長機構…………………………23
2.3.4 CVD鑽石之結晶形態…………………………28
2.4 薄膜的附著性及殘留應力計算………………………29
2.5 刀具破壞的形態及成因………………………………32
第三章 實驗方法與步驟……………………………………….34
3.1 實驗流程圖……………………………………………34
3. 2實驗設備………………………………………………34
3.3 基材和反應氣體………………………………………37
3.4 實驗條件及實驗設計…………………………………38
3.5 基材前處理……………………………………………39
3.6 實驗步驟………………………………………………40
第四章 實驗結果與討論……………………………………….47
4.1 不同基材前處理對成長鑽石膜品質之影響…………47
4.1.1 未去鈷直接成長鑽石膜………………………47
4.1.2 去鈷前處理後成長鑽石膜……………………53
4.1.3 利用超音波震盪晶種預芽成長鑽石膜………58
4.1.4 利用撞擊方式晶種預芽後成長鑽石膜………64
4.2 鑽石膜與基材的介面分析……………………………69
4.3機械性質測試…………………………………………76
4.3.1 基材表面粗糙度對附著性的影響及附著性測試76
4.3.2 鑽石膜之非鑽石碳比率及殘留應力計算……86
4.3.2 切削性能測試結果……………………………87
第五章 結論…………………………………………………….94
第六章 未來展望……………………………………………….95
參考文獻 ……………………………………………………….96
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