臺灣博碩士論文加值系統

　　本篇論文利用微波電漿化學氣相沉積系統在三吋及四吋的矽基板上成長鑽石薄膜，一方面，在三吋的基板上借由不同的負偏壓從-150V到-450V加強成長的成核密度，另一方面則利用四吋的基板約在450℃較低溫的成長條件下比較不同成長壓力和甲烷濃度對成長品質的影響。
　　在完成鑽石薄膜的成長之後，借由一連串的科學分析來了解鑽石薄膜的品質，包括SEM來觀察結晶的形態，AFM 來量測薄膜的粗糙度，為了更進一步了解sp2和sp3碳鍵結在鑽石薄膜中的成分比例，以不同的雷射波長做為拉曼系統的激發光源可探索詳細的定量分析，最後透過反射光譜以及吸收參數的比較，來判斷鑽石薄膜的光譜穿透範圍。
　　實驗結果指出，當偏壓成長鑽石薄膜電壓增加到-250V時，sp3對sp2的比率為最高，隨著電壓繼續增加則比率反而下降，在低溫的成長條件下，較大的壓力和較低的甲烷濃度可成長較好的鑽石品質，品質好的鑽石薄膜由於結構排列較整齊在紅外光到紫外光的範圍表現出好的光穿透性。

In this research, diamond films on 3 inches and 4 inches diameter (100) silicon wafers were synthesized using microwave plasma vapor deposition( MPCVD) in different negative bias and low temperature conditions, independently. The bias voltage applied to the 3 inches diameter substrates during diamond growth from was —150 to —450V. However, the low-temperature growth of diamond (LTGD) in different syntheses pressure and methane concentration was performed at 450℃ on 4 inches diameter substrates.
After diamond film deposition, SEM and AFM were used to measure the surface morphology and roughness. To specify the sp2 and sp3 carbon bonding and the quality of the diamond, the laser Raman at 457, 488, 514 and 632nm was used as a selective probe to investigate the qualities of the diamond films. Optical reflectance measurements were carried out by a UV-VIS-IR spectrophotometer(Perkin-Elmer Lambda 900) in the wavelength range of 200-2500nm. It was found that good uniformity was achieved for both the 3 inches and 4 inches diameter of diamond films. The experimental results showed that the ratio of sp3 to sp2 is increased from no bias to —250V then decreased as the negative bias increased. It was also indicated that higher pressure or lower methane concentration in the deposition conditions of LTGD would have better diamond quality and broader range of transparency from UV to IR.

中文摘要---------------------------------------------i
英文摘要---------------------------------------------ii
誌謝---------------------------------------------iii
目錄---------------------------------------------iv
表目錄---------------------------------------------vii
圖目錄---------------------------------------------viii
一、簡介-----------------------------------------1
二、文獻回顧-------------------------------------2
2-1鑽石的特性-----------------------------------2
2-2 鑽石的合成-----------------------------------4
2-2-1鑽石的合成技術----------------------4
2-2-2碳鍵結的分類------------------------5
2-3CVD鑽石的生長技術--------------------------6
2-3-1沉積機制----------------------------6
2-3-2鑽石薄膜的成核----------------------7
2-3-3偏壓成長鑽石薄膜--------------------10
2-3-4低溫成長鑽石薄膜--------------------11
2-4鑽石薄膜的分析技術---------------------------12
2-4-1表面型態與粗糙度分析----------------12
2-4-2拉曼光譜分析------------------------14
2-4-3化學成份分析------------------------15
2-5鑽石薄膜的應用-------------------------------16
三、偏壓成長之鑽石薄膜特性分析-----------------18
3-1緒論-----------------------------------------18
3-2實驗步驟-------------------------------------19
3-2-1MPCVD成長機制-----------------------19
3-2-2偏壓成長之鑽石薄膜沉積流程----------19
3-2-3偏壓成長之鑽石薄膜成長條件----------20
3-3結果與討論-----------------------------------24
3-3-1SEM表面型態分析---------------------24
3-3-2AFM表面粗糙度分析-------------------30
3-3-3Raman光譜品質和成份分析-------------32
3-3-4X光光電子能譜分析-------------------43
四、低溫成長之鑽石薄膜特性分析----------------45
4-1緒論-----------------------------------------45
4-2實驗步驟-------------------------------------46
4-2-1低溫成長之鑽石薄膜成長條件----------46
4-3結果與討論-----------------------------------48
4-3-1AFM表面粗糙度分析-------------------48
4-3-2Raman光譜的品質和成份分析-----------50
4-3-3反射光譜的光學特性分析--------------53
五、拉曼散射共振光譜----------------------------- 59
5-1緒論----------------------------------------- 59
5-2實驗步驟------------------------------------- 60
5-2-1拉曼光譜量測條件-------------------- 60
5-3結果與討論----------------------------------- 60
5-3-1拉曼光譜的annealing效應------------- 60
5-3-2拉曼光譜的共振---------------------- 64
5-3-3Hexagonal diamond-2H的拉曼共振光譜-- 67
六、結論----------------------------------------- 70
參考資料--------------------------------------------- 72

[1]鑽石合成　宋健民　博士著　全華科技圖書股份有限公司
[2]S.Yugo, K.Semoto, N. Nakamura, T. Kimura, H. Nakai, M. HashimotoDiamond and Related Materials 6 (1997)1047-1050
[3]S.Yugo,T.Kanai,T.Kimura and T.Muto,Appl.Phys.Lett.,58(1991)1036.
[4]B.R.Stoner,H.H.Ma,S.D.Wolter,W.Zhu,Y.-C.Wang,R.F.Davis and J.T.Glass,Diamond Relat.Mater.,2(1993)142.
[5]Y.Shigesato,R.E.Boekenhauer and B.W.Sheldon,Appl.Phys.Lett.,63(1993)314.
[6]R.Beckmann,B.Sobisch,W.Kulisch and C.Rau,Diamond Relat.Mater.,3(1994)555.
[7]S.Yugo et al./Diamond and Related Materials 8(1999)1406-1409.
[8]M.Ihara,H.Maeno,K.Miyamoto and H.Komiyama,Diamond Relat.Mater.1(1992)187.
[9]M.Kitabatake and K.Wasa,J.Appl.Phys.,58(1985)1693.
[10]Y.Liou,A.Inspektor,R.Weimer and R.Messier,Appl.Phys.Lett.,55(1989)631.
[11]Y.Muranaka,H.Yamashita and H.Miyadera,J.Appl.Phys.,69(12)(1991)8145.
[12]J.Wei,H.Kawara,J.Suzuki and A.Hiraki.Jpn.Appl.Phys.,29(1990)L1483.
[13]R.K.Singh,D.Gilbert,R.Tellshow,P.H.Holloway,R.Ochoa,J.H.Simmons and R.Koba,Appl.Phys.Lett.,61(1992)2863.
[14]科儀新知89, 第十七卷第三期中華民國八十四年十二月
[15]科儀新知104, 第十九卷第六期中華民國八十七年六月
[16]Raman spectra and application//Halina Baranska, Anna Labudzinska, and Jacek Terpinski./ Warzawa :PWN--Polish Scientific Publishers ; /Chichester :E. Horwood ;/New York, N.Y., U.S.A. :Distributors, Halsted Press,/1987./
[17]材料分析，汪建民　主編，中國材料科學學會
[18]D.Beeman,J.Silverman,R.Lynds,M.R.Anderson,Phys.Rev.B.5(1972)4951.
[19]S.F.Yoon,H.Yang,A.Rusli,J.Ahn,Q.Zhang. Diamond and Related Materials 7(1998)70-76.
[20]V.Paillard, P.Melinon, V.Dupuis, J.P.Perez, and A. Perez, Phys. Rev. Lett. 71, 4170(1993)
[21]V.Paillard, P.Melinon, V.Dupuis. Q.Perez, J.P.Perez, G.Guiraud. and J.Formazero. Phys. Rev. B 49. 11433(1994)
[22]R.J.Nemanich, J.T.Glass, G.Lucovsky, and R.E.Shroder, J.Vac.Sci.Technol. A 6.1783(1988).
[23]I.Watanabe and K.Sugatha.Jpn.J.Apply.Phys.27 1808(1988).
[24]S.M.Leeds,T.J.Davis,P.W.May,C.D.O.Pickard,M.N.R.Ashfold/Diamond and Related Materials 7(1998)233-237.
[25]A.C.Ferrari and J.Robertson. Physical Review B. Volume 63, 121405(R)
[26]B.R.Wu,Ji-an Xu,Rhys.Rev.B 57(1998)13355.
[27]Chia-Fu Chen, Sheng-Hsiung Chen, Kuen-Mo Lin, Thin Solid Films 270(1995)205-209.
[28]材料會訊　第七卷　第4期　中華民國89年9月
[29]P.S.Dobal, M.S.Navati,H.D.Bist,T.Som,V.N.Kuldarni,J.Raman Spectrosc. 29 (1998)567.
[30]M.C.Rossi, Appl.Phys.Lett.73(1998)1203.
[31]T.Sharda, D.S.Misra, E.W.Seibt, F.Selvam, J.Vac. Sci. Technol. A16(1998)413.
[32]Diamond Films and Coating development, Properties, and Applications edited by Robert F.Davis.
[33]J.Mossbrucker,J.Asmussen/Diamond and Related Materials 8(1999)663-667.
[34]S.Ogino, H.Shiomi, N.Fujimori, K.Awazu, Y.Maeda, Nuclear Instruments and Methods in Physics Research B 144(1998)181-185.
[35]A.Laikhtman and A.Hoffman, J.Appl. Phys. 82(1), 1 July 1997.
[36]R.W.Lamberton, S.M.Morley, P.D.Maguire, J.A.McLaughlin, Thin Solid Films 333(1998)114-125.
[37]J.Wagner,M.Ramsteiner,Ch.Wild,P.Koidl,Phys.Rev.B 40(1989)1817.
[38]C.D.Clark,C.B.Dickerson,J.Phys.D 4(1992)869.
[39]L.Fayette,B.Marcus,M.Mermoux,L.Abello,G.Lucazeau,Diamond Relat.Mater. 3(1994)438.
[40]J.Wagner,C.Wild,P.Koidl,Appl.Phys.Lett.59(1991)779.