臺灣博碩士論文加值系統

本論文在電子構裝熱傳分析應用有限元素方法探討構裝體之熱場及流場問題，先使用固體模型及傳統熱對流經驗公式預測電子構裝體熱場行為，再利用CFD軟體模擬電子構裝體在風洞實驗的熱場和流場分佈情況；經由預測與實驗量測熱阻值比對結果，CFD模擬風洞實驗較能準確預測實驗熱阻值，並探討構裝體設計參數對熱場的影響。
構裝模流分析可區分為三大部分，第一部分：以實際短射實驗驗證電腦模擬膠體充填過程波前分佈準確性，建立可靠模流分析模型。第二部分：探討晶片與晶片座比例和down-set深度對流動波前的影響。第三部分：觀察不同實驗晶片大小造成膠體流動波前差異，所產生賽馬現象對TSOP40表面翹曲和晶片座偏移量的影響。TSOP結果顯示，電腦模擬分析能有效地預測流動波前形狀、晶片座偏移量和氣孔缺陷，當實驗晶片與晶片座尺寸較接近，較能緩和賽馬現象，使得表面翹曲和晶片座偏移量也逐漸下降趨勢。

In this thesis, the finite element method (FEM) is applied to predict the thermal performance of the IC packages. The FEM solid model is built using the empirically correlated surface convection coefficients to predict the thermal field, then the CFD thermal model of the packages to represent the package in wind tunnel experiment is generated to simulate the thermal and flow fields of the package. Comparison both the predicted thermal resistance values by solid and CFD modeling with the experimental measurements, CFD modeling is closer to the measurement data. Also the effects of design parameters of the package on the thermal performance is discussed.
The contents of mold flow analysis of IC packages include three parts. Firstly, the mold flow simulation during encapsulation is performed, then the prediction is verified by the short-shot test to assure the accuracy of the predicted melt-front advancement shapes. Secondly, the downset and the size ratio between die pad are chosen as design parameters to study the effects of design parameters on melt-front shapes. In the third part, the effect of melt-front difference between the upper and lower cavity (race track) by various die sizes on the package surface warpage and paddle shift are discussed, here the results of TSOP40 are demonstrated. The results show that CAE simulation can effectively predict the melt-front shapes, paddle shift, and air trap defect. Also the closer die size to die pad size, the more smooth the race track profiles, which minimize the package surface warpage and paddle shift.

中文摘要-------------------------------------------- i
英文摘要---------------------------------------------ii
誌謝-------------------------------------------------iii
目錄------------------------------------------------ iv
表目錄-----------------------------------------------vi
圖目錄-----------------------------------------------vii
符號說明------------------------------------------ --x
第一章緒論----------------------------------------1
1.1 半導體產業概況-----------------------------------1
1.2 電子構裝技術製程---------------------------------3
1.3 電子構裝分類與展望-------------------------------5
1.4 文獻回顧- ---------------------------------------8
第二章研究理論基礎--------------------------------10
2.1 ANSYS模擬方法-----------------------------------10
2.1.1 FEM熱場分析-假設條件--------------------------10
2.1.2 CFD流場分析-假設條件--------------------------11
2.2 熱場實驗--風洞介紹-------------------------------11
2.3 實驗環境條件-------------------------------------12
2.3.1 自然對流 (natural convection)-----------------12
2.3.2 強制對流 (forced convection)------------------13
2.4 風洞實驗步驟-------------------------------------14
2.4.1 自然對流(natural convection)之熱阻量測--------14
2.4.2 強迫對流(forced convection)之熱阻量測---------14
2.5 建立模擬分析風洞模型-流場分析--------------------15
2.6 構裝體(package)模型簡化--------------------------15
2.6.1 晶片座(pad)簡化設計---------------------------15
2.6.2 導線架(lead frame)簡化設計--------------------16
2.6.3 金線簡化設計----------------------------------17
2.6.4 銀膠(die attach)簡化設計------------------17
2.7 模流分析-------------------------------------18
2.8 幾何模型的建構技巧-------------------------------18
2.9 模流分析項目-------------------------------------19
2.10 短射實驗步驟------------------------------------20
2.11 翹曲量測實驗------------------------------------22
2.11.1 陰影疊紋法量測原理--------------------------22
2.12 晶片座偏移量量測-工具顯微鏡---------------------22
第三章理論介紹------------------------------------25
3.1 熱傳分析基礎理論---------------------------------25
　3.1.1 熱傳導理論-----------------------------------25
3.1.2 熱對流方程式與熱對流係數-----------------28
3.2 熱阻量測-----------------------------------31
3.3 CFD模型分析理論----------------------------33
3.4 模流分析原理-------------------------------34
第四章CFD結果與討論-------------------------------36
4.1 介紹分析元素-------------------------------------36
4.2 熱場與流場分析結果-------------------------------37
4.2.1網格大小分佈 ---------------------------------38
　4.2.2 熱場與流場分析結果---TSOP50 二層板-----------40
4.2.3 熱場與流場分析結果---PQFP100-----------------43
　4.2.4 熱場與流場分析結果---LQFP208-------------46
第五章結果與討論(二)------------------------------52
5.1 前言---------------------------------------------52
5.2 模流分析模擬和實驗比對驗證-----------------------54
5.2.1 TSOP系列-TSOP40------------------------------54
　5.2.2 LQFP系列-LQFP 176L---------------------------55
5.2.3 LQFP系列-LQFP208-----------------------------58
5.3 參數設計--------------------------------------60
5.3.1 TSOP系列-TSOP40------------------------------60
　5.3.2 QFP系列-LQFP 208L----------------------------62
5.4 探討晶片大小與晶片座偏移的關係-------------------63
5.4.1 TSOP系列-以TSOPII 40為例---------------------63
　5.4.2 晶片座偏移實驗量測數據 176L------------------64
5.4.3 翹曲實驗量測結果-----------------------------71
第六章結論----------------------------------------80
參考文獻---------------------------------------------82
自傳-------------------------------------------------85

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