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研究生:程玉平
研究生(外文):Yu-Ping Chen
論文名稱:鈦酸鋇添加釹之電性研究
論文名稱(外文):Studies of Doping Nd on the Electrical Properties of Ba1-xSrxTiO3
指導教授:王宏文王宏文引用關係
指導教授(外文):Hong-Wen Wang
學位類別:碩士
校院名稱:中原大學
系所名稱:化學研究所
學門:自然科學學門
學類:化學學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:103
中文關鍵詞:鈦酸鋇介電常數
外文關鍵詞:dielectrical constantBaTiO3
相關次數:
  • 被引用被引用:9
  • 點閱點閱:324
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  • 下載下載:35
  • 收藏至我的研究室書目清單書目收藏:0
本研究目的是在了解Nd2O3施體添加物在 Ba1-XSrX TiO3 電氣特性(介電常數,導電度,散逸因子)中所扮演的角色。
絕緣的 Ba1-XSrX TiO3(X=0 , 0.1 , 0.2)(導電度大約10-13Ω-1cm-1),在添加少量的Nd3+取代Ba2+位置時,可以轉化成半導體材料。但是,半導化組成份非常狹小,大約添加小於0.3% mole Nd的範圍內,超過這個添加量時又轉化成絕緣體。而在空氣環境中燒結,隨Nd添加量增加可以得到較小的晶粒。
以XRD鑑定製備的粉末,得到與 BaTiO3相同的相,因此在1375oC~1400oC就可獲得高密度的陶瓷體。
有關於電氣特性:由實驗中發現介電常數,導電度,散逸因子等都會隨Nd添加量增加而快速的增加,但是超過0.3% mole Nd量時,其電氣特性反而降低了,晶粒更微小化,回復為絕緣的
Ba1-XSrX TiO3特性。
The additions of Nd2O3 to Ba1-XSrX TiO3 has been studied in order to evaluate the role of this donor dopants on electrical properties ( dielectric constant , conductivity , dissipation factor ) of Ba1-XSrX TiO3 ceramics.
Insulating Ba1-XSrX TiO3 (x=0, 0.1, 0.2)(conductivity of around 10-13Ω-1cm-1) can be transferred into semiconducting material by small addition of Nd3+ donor dopants at the Ba2+ site.
The composition of semiconducting is a narrow composition range (<0.3% mole Nd) for Nd-doped BST ceramics and the ceramics reverts back to insulating behavior for greater additions of donors (>0.3% mole Nd). Addition of Nd dopants decreased the grain size when fired in air.( 1375oC~1400oC /2hr)
The powder phase was analyzed by XRD and found to a be of Ba1-XSrXTiO3 phase.Since addition of Nd results at temperature of 1375oC~1400oC /2hr, high density of ceramic body was observed
It was found that dielectric constant , conductivity, and dissipation factor increased as the doping dopants increased.
However , they also decreased with increasing doping over 0.3%mole Nd.
目錄
第一章緒論
1-1前言11頁
1-1-1積層晶片電容器12頁
1-1-2鈦酸鋇的半導化13頁
1-2研究目的14頁
第二章文獻回顧15頁
2-1材料介電特性15頁
2-1-1電容量15頁
2-1-2電介質極化機構16頁
2-1-3 鈦酸鋇結構及介電特性18頁
2-2酸鋇的電性21頁
2-2-1導電度21頁
2-2-2介電損失25頁
2-3-1雜質添加依取代位置分類27頁
2-3-2雜質添加依取代功能分類28頁
第三章實驗過程35頁
3-1實驗藥品35頁
3-2氧化物混合法添加Nd 過程35頁
3-3性質的測量37頁
第四章結果與討論39頁
4-1 鍛燒粉末之XRD相分析40頁
4-2最佳密度的燒結條件40頁
4-3電性42頁
4-3-1 Nd添加量對導電度的影響43頁
4-3-2Nd添加量對能量散逸因子影響47頁
4-3-3Nd添加量對介電常數影響 48頁
第五章結論53頁
第六章參考資料56頁
附表61頁
附圖61頁
第六章參考資料[1].. 吳朗, 電子陶瓷材料---(介電材料) ,全欣資訊圖書,(1994)[2].. 工研院七十九年精密陶瓷入門[3]..R.Moazzami, C.Hu., W.H. Shepherd, " Electrical characteristics of ferroelectric PZT thin films for DRAM application " IEEE Transitions on electron Devices , 39[9] (1992) ,2044[4].. Fundamentals of Ceramics , MCGRAW-HILL international Edition,1996[5].. J.M.Herbert,Ceamic Dielectrcs and Capacitors ,1981[6].. 鄧文浩,''半導型電容器" , 工業材料, 103 (1995) , 85[7].. A.J.Moulson , J.M.Herbert " Electroceramic:Materials , Properties, Applicantions " , published by Chapman and Hall(1990)[8].. 周玉,雷廷權 陶瓷材料學[9].. .M.Mcquarrie "structural be havior in the system (Ba , Ca, Sr)TiO3 and It''s Relation to Ceramic Dielectric characteristics , J.Am. Ceram. Soc. , 38[12] 1965[10].. J. A. Basmajian and R. C. Devries , "Phase Equilibria in the System BaTiO3~ SrTiO3" J.Am. Ceram. Soc. , 40 [11] 1969[11]..黃莉琪,''添加物對鈦酸鍶鋇薄膜顯微結構及其電性之影響'' ,國立交通大學,碩士論文,(2000)[12].. D.Hennings , A.Schnell , G . Simon. Diffuse ferroelectric phase transitions in Ba(Ti1-x Zrx)O3 Ceramic . J.Am.Ceram. Soc. 65(11)538-44 ,1982[13].. Solid State Chemistry and Applications , Anthony R. West . 1986 by John wiley ,and Sons , Ltd , p457~p524[14].. Introduction to Ceramics : W.D.Kingery , H.K.Bowen , D.R.Uhlmann 2Edition , p847~p899[15].. G.H.Jonker:"Som aspects of semconducting Barium titanate" , Solid State Electro. , 7 ,p.895-903 , 1964[16].. J. T. Ching and H. Y. Lu "Lanthanum-Mgnesium and Manganese Donor-Accepator -Codoped Semiconducting Barium Titanate , J.Am. Ceram. Soc. 73 [2] 329-334 (1990)[17]..Seshu B. Desu and David A. Payne " Interfacial Segregation in Perovskites :Ⅲ, Microstrure and Electrical Properties , J. Am. Ceram. Soc. 73 [11] 3407-15 (1990)[18] S. B. Desu: "The Nature of Defects in Semconducting Barium Titanate" , Ceram. Transaction , 8 , p.157-168 , 1990[19] N. H. Chan and D. M. Smyth : "Defect Chemistry of Donor Doped Barium Titanate " , J. Am. Ceram. Soc. , 67 [4] p.285~288 , 1984[20]金屬及陶瓷材料實驗手冊,中原大學化學系,王宏文老師編[21]T. T. Fang , and H. L. Hsieh , J.Mater. Sci. Lett. 9 (1990) 1223[22]G. V. Lewis , C. R. A. Catlow , and R. E. W. Casselton , J. Am. Ceram. Soc. ,68 (1985) 555.[23]J. Daniels , K. H. Hardtl , D. Hennings and R. Wernick , Philips res. Pept. , 31 (1976) 487[24]S. B. Desu E. C. Subbarao , "Inhibition of Reduction of BaTiO3 " , J. Mater. Sci. , 15 [8] 2113-15 (1980)[25]G. H. Jonker , Solid-State Electronics , 7 (1964) 895[26]C. J. Peng and H. Y. Lu, "Compensation Effect in Semiconducting Barium Titanate " J. Am. Ceram. Soc. , 71 [1] C44-C46 (1988)[27]H. M. Chan. , M. P. Harmer and D. M. Smyth , "Compensation Defects in Highly Donor - Doped BaTiO3" , J. Am. Ceram. Soc. , 69 [6] 507-10 (1986)[28] B. Odekirk , U. Balachandran , N. G. Eror. And J. S. Blakemore : "Conductivity of strongly Reduced and Quenched Ceramic La - Doped SrTiO3 " , J. Am. Ceram. Soc. 66 [2] , pp C22-C24 (1990)[29]J. P. Zhong , M. Y. Zhan and H. Wang : " Study on the Semconducting Mechanism of BaTiO3 and SrTiO3 Ceramics " , Ceramics International , 16 , pp85~ pp88 , (1990)[30]J. Qi , W. Chen , Y. Wu , L. Li , " Improvement of the PTCR Effect in Ba1-xSrx TiO3 "Semconducting Ceramics by doping of Bi2O3 Vapor During Sentering " , J Am. Ceram. Soc . , 81[2] (1988) , 437[31]S. B. Desu , " Grain boundary Effects in Semiconducting BaTiO3 , " Eur. Ceram. , 2 , 2.214~2.219(1989)[32]Y. M. Chiang , T. Takag , "Grain- boundary Chemistry of barium titanate and strontium titanate: high-temperature equilibrium space charge " J. Am. Ceram. Soc. , 73[11] (1990) , 3278
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