自 1970 中葉以來，學者專家對於III-V 族化合物半導體的研究即感到相當大的興趣。其中，磷化銦材料本身是相當適用於高速及高頻元件的應用。而 InP 及其相關的化合物亦被認為是可在許多光電元件上有廣泛應用的重要材料之一。
近年來摻雜稀土元素(Rare-Earth)於III-V化合物半導體的研究，發現其對於提昇光電元件之特性扮演著很重要的角色；此乃由於稀土元素對氧以及其他VI族的元素有極強的親和力，因此有吸附雜質以降低背景濃度之效果，有助於提昇光電元件之特性。
在本論文中，我們以液相磊晶法在不同溫度下成長磷化銦的磊晶層於磷化銦基板上，探討溫度對於磊晶層表面型態的影響。並摻雜不同的稀土元素鉺（Er）和鐿(Yb)來探討其影響。
在磊晶層的光電特性量測方面，霍爾量測顯示出摻雜稀土元素後對磊晶層的品質和載子濃度均有改善，而當鐿(Yb)的摻雜量高於0.1364wt%時，InP磊晶層將會由n型半導體轉變成為p型半導體。PL量測顯示摻雜稀土元素有助於提昇其光特性。因此摻雜稀土元素不僅能提昇其光電特性，且適當的摻雜稀土元素Yb可得到高品質p-type InP磊晶層。

From the mid-1970s, many experts had great interest in III-V compound semiconductor materials. The InP is the semiconductor material that is suit applied industrially for the fabrication of high speed and high frequencies devices. InP and InP-based alloys have been considerable promising candidates for wider application in many electronic and photonic devices.
Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. Many researches had discovered that the RE elements have a strong affinity to oxygen and other group VI elements, the effect can be used to perform effective gettering of the background donors and acceptors in III-V semiconductors.
In this study, we grow InP on the InP substrate by liquid phase epitaxy(LPE) in different temperature. We try to confer the influence of the surface morphology in different temperature. Besides, we add different rare-earth elements(Er and Yb) into the growth solution to investigate the influence of rare earth elements.
Optical and electrical characterizations of InP epilayers indicate that both optical and electrical properties of InP epilayers are improved by rare-earth treatment. When Yb adding amount is over 0.1364wt%, the conductivity of InP layers will smoothly change from n-type to p-type. Finally, we could directly get high quality p-type InP epilayer by suitable treatment of Yb species.

中文摘要....1
英文摘要....2
Table of contents....3
Figure captions....6
Table captions....11
第一章 簡介 ....12
第二章 液相磊晶系統與實驗 ....13
第三章 未摻雜及摻雜稀土元素InP磊晶層成長評估 ....14
第四章 InP磊晶層之光電特性量測分析 ....15
第五章 結論....16
Chapter 1 Introduction....17
1.1 Historical background....17
1.2 The binary compound Indium Phosphide....18
1.3 Rare-earth elements....19
1.4 Advantage of liquid-phase epitaxy ....20
Chapter 2 The LPE gowth system and experiment ....23
2.1 The LPE growth system ....23
2.2 The LPE growth technique ....25
2.3 Material preparation....27
2.4 Crystal growth process ....29
Chapter 3 The growth of undoped and RE-treated InP epilayers grown by LPE ....36
3.1 The InP-InP lattice-homoepitaxy....36
3.2 Thermal degradation .... 37
3.3 Surface morphology of InP epilayers....39
3.4 The growth thickness of InP epilayers ....41
Chapter 4 The Characterizations of RE-treated InP epitaxial layers ....51
4.1 Hall measurement....51
4.1.1 Principle of Hall measurement ....51
4.1.2 Results and discussion ....53
4.2 Photoluminescence measurement ....56
4.2.1 Principle of photoluminescence measurement ....56
4.2.2 Results and discussion ....58
Chapter 5 Conclusions ....79
References ....82

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