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研究生:葉智仁
研究生(外文):Chih-Jen Yeh
論文名稱:ONO薄膜之研究與記憶體應用
論文名稱(外文):The Study of ONO and Memory Applications
指導教授:鄭湘原
指導教授(外文):Erik S. Jeng
學位類別:碩士
校院名稱:中原大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:70
中文關鍵詞:非揮發性記憶體氮化物捕陷ONOSONOSF-N穿隧
外文關鍵詞:Nitride-trapNVMF-N tunnelingONOSONOS
相關次數:
  • 被引用被引用:9
  • 點閱點閱:566
  • 評分評分:
  • 下載下載:50
  • 收藏至我的研究室書目清單書目收藏:1
  目前快閃記憶體元件之特性乃是利用電子儲存於浮動閘極中,藉由臨界電壓的偏移來判別記憶與否。傳統浮動閘極記憶元件是利用複晶矽作為浮動閘極的材料,由於複晶矽所擁有的導電特性,當複晶矽形成之浮動閘極若產生局部漏電將導致全面性的漏電問題。針對此一缺失,將利用已被廣泛研究的ONO結構取代傳統的浮動閘極,其中氮化矽層的導電性較複晶矽來的差,故在漏電問題上,較不易產生傳統浮動閘極全面漏電的危險。本論文依此推論將探討ONO記憶體在克服傳統浮動閘極記憶元件的可行性與其發展的極限。
  在實驗的部分,將利用熱成長與低壓化學氣相沉積法成長穿隧氧化層-氮化矽層-包覆氧化層(ONO),並製作成SONOS結構,對SONOS結構電容器進行C-V與I-V特性的量測與分析,來確認量子點捕獲電荷的能力。接著利用此一結構進行記憶元件的製作,完成的元件進行記憶寫入/讀取特性之量測,並進一步確認ONO結構在記憶元件可靠度的表現。
  在實驗的過程將針對部分製程條件與電性特性作分析,如:在ONO中穿隧氧化層厚度、矽離子佈植對ONO的可靠度與電荷捕陷,以及偏壓的條件與時間對實驗結果的影響。
  Presently, the characteristic of flash memory devices rely on the shift of threshold voltage to estimate for whether the device memorizes or not, by the electron stored in the floating-gate. In traditional floating-gate memory device is utilize poly silicon for the floating-gate material. If the floating-gate formed by poly silicon occurs local leakage, it will result in entire leak of trapping charge, due to the electric conductivity of poly silicon. For the fault, the wield researched structure of ONO will take the place of the conventional floating-gate. In the problem of leakage, the Si3N4 is more difficult to occur the entire leakage due to the electric conductivity of Si3N4 layer is worse than that of poly silicon. According to the inference, the SONOS memory overcomes the feasibility and the limitation of the development for conventional floating-gate memory devices will be discussed in the thesis.
  In the part of experiment, utilizing the methods of thermal growth and LPCVD to grow tunneling oxide-Si3N4-capping oxide (ONO), and to fabricate the SONOS structure, then takes the measurement and analysis of C-V and I-V characteristic for the capacitor of SONOS structure to ensure the charge trapping ability of the ONO layer. Go on, utilizing this structure to fabricate the memory device, the accomplished device carries the measurement of program/read characteristic out, and further confirm the performance of reliability for the ONO structure in memory devices.
  In the process of the experiment, the analysis will aimed at some process conditions and electric characteristics, such as the tunneling oxide thickness of the ONO layer, Si-implant for the reliability and charge trapping of ONO layer, and the bias conditions to the effects for the result of the experiment.
中文摘要
Abstract
致謝
目錄
圖例說明
表例說明
第一章氮化物捕陷的非揮發性記憶體(Non-Volatile Memory; NVM) 簡介
 1-1節 非揮發記憶元件歷史發展與回顧
 1-2節 MNOS元件的起源背景及其發展應用
 1-3節 SONOS元件的起源背景及其發展應用
 1-4節 與堆疊式閘極記憶元件之比較
第二章 SONOS 記憶體的原理與操作
 2-1節 常見的漏電機制
 2-2節 Schottky發射現象
2-3節 Poole-Frenkel (P-F)效應
2-4節 Fowler-Nordheim (F-N)穿隧效應
   2-4-1 節 在MOS結構中的F-N穿隧機制
   2-4-2 節 在SONOS結構中的F-N穿隧機制
第三章 SONOS電容器之特性
 3-1節 從I-V特性觀察載子在ONO中的傳導與穿隧現象
 3-2節 從C-V特性觀察分析ONO捕獲載子的能力
3-3節 SONOS電容器的可靠度分析
 3-4節 結果與探討
第四章 SONOS在非揮發性記憶體方面的應用
 4-1節 簡介
 4-2節 元件製作
   4-2-1 節 二種不同佈植條件之元件製作
   4-2-2 節 矽離子佈植縱深估算
 4-3 製程與電性模擬
   4-3-1 節 SONOS結構之TSUPREM4製程模擬
   4-3-2 節 SONOS結構之MEDICI電性模擬
   4-3-3 節 製程與電性模擬之總結
 4-4實驗結果與討論
第五章 結論與未來展望
參考文獻
個人自傳
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