臺灣博碩士論文加值系統

以分子束磊晶法在砷化鎵 (001) 基板上成長硒化錳鋅磊晶層，並且利用反射光譜及光激螢光譜研究磊晶層的光學特性。另外量測變溫光激螢光譜，並利用Varshni模型及 O’Donnell模型對實驗值做擬合。利用這兩個模型分別可以得到與聲子能量有關之擬合參數 β (113 K至 306 K) 及 <hν> (7 meV至10 meV)。利用Arrhenius圖法計算活化能，得知活化能會隨著錳含量的增加而減少。另外也
利用散射模型對變溫光激螢光譜訊號的半高寬做擬合。
　　除了研究硒化錳鋅磊晶層之外，我們也利用分子束磊晶法在砷化鎵基板上成長稀磁性半導體，硒化錳鋅 (Zn0.96Mn0.04Se)，並且將碲化鋅量子點埋入其中。碲化鋅量子點平均覆蓋的厚度分別為1.7、2.0、2.3、2.7、3.0、3.3個原子層。能量在2.15 eV至2.41 eV間的光激螢光之訊號是由碲化鋅量子點所造成的，而在1.9
eV至2.0 eV之間的訊號則是由硒化錳鋅中的錳離子所造成。

Zn1-xMnxSe epilayers were grown on the GaAs (001) substrates by the molecular beam epitaxy (MBE). Optical properties were studied by the reflectance (R) and photoluminescence (PL) spectroscopy. The temperature dependence of the energy gap, measured by the PL spectra, was fitted by the Varshni’s and O’Donnell’s model. The phonon energy related fitting parameters β (113K to 306K) and <hν> (7meV to 10meV) were obtained from the Varshni’s and O’Donnell’s fits, respectively. Activation energies calculated from the Arrhenius’ plot of the integrated PL show a decrease with the Mn composition. The PL line-width broadening with the temperature was fitted by Γ(T)= Γ0+ΓaT+ΓLO1/[exp( LO1/kT)-1]+
ΓLO2/[exp( LO2/kT)-1]+Γiexp(-<Eb>/kT).
In addition to the study of Zn1-xMnxSe epilayers, the ZnTe quantum dots (QDs) were grown in the diluted magnetic semiconductor, Zn0.96Mn0.04Se, matrix on the GaAs substrate by molecular beam epitaxy. The averaged coverage of ZnTe was 1.7 ML, 2.0 ML, 2.3 ML, 2.7 ML, 3.0 ML, and 3.3 ML. The PL peak appears at energy between 2.15 eV and 2.41 eV is attributed to the radiation from ZnTe QDs. While, the peak at energy between 1.9 eV and 2.0 eV is due to emission from the intra-Mn2+ of Zn0.96Mn0.04Se.

中文摘要………………………………………………………………………..I
英文摘要………………………………………………………………………..II
致謝……………………………………………………………………………..III
目錄……………………………………………………………………………..IV
第一章 緒論…………………………………………………………………....V
第二章 實驗……………………………………………………………………VI
第三章 硒化錳鋅磊晶層之特性……………………………………………….VII
第四章 埋在硒化錳鋅中碲化鋅量子點之特性………………………….VIII
第五章 結論…………………………………………………………………….IX
附錄……………………………………………………………………………...X

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