臺灣博碩士論文加值系統

摘 要
　　本論文所討論的是以數值方法計算矽鍺半導體之雙量子井結構，利用量子力學中有限深能井的模型，說明Si/Ge半導體兩種晶格常數不相同的材料，此種異質界面要成長成為晶格匹配的材料時所承受的應變知識和Ge(x)Si(1-x)/Si 量子井的構造，進而再利用薛丁格方程式（Schrodinger Equation）和Model-Solid Theory的理論探討計算量子井中，因摻雜濃度X值時的價電帶和導電帶可能侷限的能階大小，再考慮激子的束縛能，得到量子井可能的發光能量。從理論的計算結果我們可由電磁波光譜表上查得所要的光波頻率。由研究計算分析結果中得摻雜濃度和井厚度的的比例控制，均將影響到半導體的光學特性。

ABSTRACT
This work studies mainly on the computation of double quantum well in Silicon-Germanium (Si(1-x)Ge(x)) compound with numerical method and model-solid theory.Because of the hetero-structure interface and lattice constant mismatch between these two elements, there is induced strain in the Ge(x)Si(1-x) layer, which can be adjusted through different concentration (X) and the well width to produce a 4-level system.
By using this 4-level system, it is possible to produce tera-hertz radiation emission, which is important for practical application in Optical Engineerings.

第一章　緒論 　　　　　　　　　　　　　　　　　　　 1
第二章 理論背景
2.1 GexSi1-x 的基本性質 　　　　　　　　　　　4
2.2 應變產生的原因 　　　　　　　　　　　　 7
2.3 應變對能帶結構的影響 　　　　　　　　　 8
2.4 單子井結構與能帶 　　　　　　　　　　　 9
2.5 量子井束縳能階的計算 　　　　　　　　　 10
2.5.1 Model-solid Theory　　　　　　　 10
2.5.2 Schrodinger Equation 　　　　　 13
2.6 光與能階躍遷 　　　　　　　　　　　　　　 18
2.7 半導體材料與波長之關係 　　　　　　　　 19
第三章　GexSi1-x / Si半導體雙量子井之研究分析
3.1 GexSi1-x 摻雜各參數的獲得 　　　　　　　 21
3.2 GexSi1-x 摻雜能階及量子井之計算 　　　　 23
3.3計算結果討論　　　　　　　　　　　　　　 26
第四章　結論 　　　　　　　　　　　　　　　　　　　　 30
參考文獻 　　　　　　　　　　　　　 　　　　　　　　 47

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