臺灣博碩士論文加值系統

中文摘要

本研究的主要目的在探討不同製程條件對氮化鋁鎵/氮化鎵超晶格之結晶結構、磊晶品質及光電特性之影響。氮化鋁鎵/氮化鎵超晶格結構以原子層磊晶製程生長於氧化鋁基板上。鋁、鎵與氮原子分別來自於三甲基鋁、三甲基鎵及高純度氨氣，輸送氣體則為經過高度純化之氫氣。氮化鋁鎵/氮化鎵超晶格結構之表面型態、磊晶品質及光電特性分別使用諾瑪斯基干涉式光學顯微鏡、X-光繞射光譜、毆傑電子能譜儀、穿透式電子顯微鏡以及吸收光譜量測加以分析。吸收光譜量測之結果顯示，隨著量子井厚度的減少，超晶格之能隙值明顯地提高。就相同之量子井厚度和能障層厚度而言，以氮化鋁（AlN）為能障層之超晶格的吸收能隙值會大於以氮化鋁鎵（AlxGa1-xN；0＜x＜1）為能障層之超晶格的吸收能隙值。

Abstract

The purpose of this study is to explore the effects of the growth conditions on the crystal structure, crystallinity and optical properties of the AlxGa1-xN /GaN superlattices.The AlxGa1-xN /GaN superlattices were grown on（0001）sapphire substrates by atomic layer epitaxy. Groups III metalorganics and NH3 were used as the sources of Al, Ga, and N atoms that were carried into the reactor by purified H2. The surface morphology, crystallinity and optical properties of AlxGa1-xN /GaN superlattices were investigated by Nomarski interference optical microscope , x-ray diffractometry（XRD）, Auger electron spectroscopy（AES）, transmission electron microscopy（TEM）and absorption spectroscopy. The results indicate that the absorption edge of an AlxGa1-xN/GaN superlattice increases as the well thickness decreases. It appears that the cut-on energies of the absorption edges of AlN/GaN superlattices are larger than those of AlxGa1-xN/GaN（0＜x＜1）superlattices with the same sizes of well and barrier layer thicknesses .

目錄

中文摘要Ⅰ
英文摘要Ⅱ
目錄Ⅲ
圖目錄Ⅴ
第一章 緒論1
第二章 研究背景及動機3
2.1 Ⅲ族氮化物材料之發展歷史與文獻回顧3
2.2 原子層磊晶之生長機制及優缺點10
2.3 基板的選擇及結晶結構之差異14
第三章 實驗步驟18
3.1 基板清洗21
3.2 氮化鋁鎵/氮化鋁異質結構之磊晶生長22
3.3 氮化鋁鎵/氮化鎵超晶格結構之生長23
3.4 氮化鋁鎵薄膜之特性量測與分析25
3.4.1 氮化鋁鎵薄膜之X光繞射分析25
3.4.2 微分干涉式光學顯微鏡分析27
3.4.3 毆傑電子能譜儀分析29
3.4.4 光電性質量測32
3.4.5 穿透式電子顯微鏡分析34
第四章 實驗結果與討論37
4.1 Ⅲ族有機金屬流量對氮化鋁鎵成份之影響37
4.2 氮化鋁鎵/氮化鎵超晶格結構之表面分析41
4.3 氮化鋁鎵薄膜之成分分析44
4.4 活性層之厚度及能障層之成份對於氮化鋁鎵/氮化鎵超晶格
結構光電性質之影響48
4.5 氮化鋁/氮化鎵超晶格結構之穿透式電子顯微鏡分析55
第五章 結論57
參考文獻58
誌謝61
作者簡介62

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