鋯鈦酸鉛(Pb(ZrxTi1-x)O3，PZT)陶瓷材料，因其具有良好之壓電特性，近年來已被廣泛應用在微機電元件的設計上，這些元件包括：微致動器、微感測器、微幫浦。本實驗是以溶膠-凝膠法(sol-gel)製作PZT壓電薄膜並根據各種製程參數(厚度、黏度、燒結方式、燒結溫度、升溫速率)作各種性能之研究及分析，而實驗結果發現以快速回火爐(RTA) 在700℃的燒結溫度，升溫速率200℃/min，溶膠黏度cps1.71~1.72，厚度為0.29μm的PZT薄膜表現最佳，可得到殘留極化量Pr＝16μC/cm2、矯頑電場Ec＝103 KV/cm、介電係數εr＝537.158。這裡PZT薄膜的壓電應變常數d33、d31及PZT/Membrane之位移量，我們是以DC電源供應器，外加電壓於PZT薄膜及PZT/Membrane上，使PZT薄膜產生逆壓電效應(converse piezoelectric effect)，再利用雷射位移計(LC-2400A)來作量測，而壓電應變常數d33＝500 pV/m、d31＝-9.855pV/m。
PZT壓電薄膜完成後利用其驅動微懸膜(Membrane)元件，薄膜製程參數以爐管燒結、燒結溫度700℃、升溫速率10℃/min的PZT(厚度0.29μm /Membrane(厚度0.4μm)表現最佳，其通DC電壓5V時的位移量為0.094μm。

In recent years, the superior piezoelectric performance of lead-zirconate-titanate, PZT：( Pb(ZrxTi1-x)O3 ), ceramics materials is applied for micro-electro-mechanical-systems extensively, including micro-actuators、micro-sensor、micro-pump, etc. In this work, sol-gel method was used to fabricate PZT piezoelectric thin film, according to various fabrication parameters (thickness、viscosity、sintering method、sintering temperature、heating rate), and the properties of PZT thin film are evaluated. To measure the displacement of PZT/Membrane and piezoelectric strain constant d33 and d31 of PZT thin film, a voltage is passed through to PZT/Membrane and PZT thin film by DC electricity supply machine associated with a laser displacement meter. It is found that the best processing conditions are sintering temperature 700℃, heating rate 200℃/min, sintering method：RTA, sol viscosity cps1.71~1.72 and PZT thin film thickness about 0.29μm. The following properties are obtained：remanent polarization Pr＝16μC/cm2, coercive field Ec＝103 KV/cm, dielectric constant εr＝537.158, piezoelectric strain constant d33＝500 pV/m and d31＝-9.855 pV/m.

PZT piezoelectric thin film is then adopted to drive a MEMS Membrane. The best processing parameters for the PZT thin film are：is sintering method by tube, sintering temperature 700℃, heating rate 10℃/min. The displacement of PZT with thickness of 0.29μm/Membrane with thickness of 0.4μm is 0.094μm.

摘要Ⅰ
英文摘要Ⅱ
目錄Ⅲ表目錄Ⅵ
圖目錄Ⅶ
第一章 序 論 1
1.1前言 1
1.2 文獻回顧2
1.3 研究動機與目的6


第二章 基礎理論 7
2.1 鋯鈦酸鉛(PZT)之特性簡介 7
2.2 鋯鈦酸鉛(PZT)之鐵電特性 10
2.2.1 鐵電薄膜之製作方法 13
2.2.2 鐵電厚膜之製作方法 16
2.2.3 鐵電薄膜及鐵電厚膜於微機電上之應用 19
2.3 PZT之壓電特性 22
2.3.1 壓電薄膜於微機電上之應用 24
2.4 溶膠凝膠法 26
2.4.1 溶膠凝膠法之基本原理 27
2.4.2 溶膠凝膠法之主要影響參數 31
2.4.3 溶膠凝膠法製備薄膜方式之比較 35
2.4.4 溶凝膠法鍍膜之程序 36


第三章 溶膠凝膠法合成壓電薄膜Pb(Zr0.52Ti0.48)O3薄膜之製程與性能分
析 49
3.1 實驗方法 49
3.1.1 鍍膜底材之準備 49
3.1.2 溶膠之調配 50
3.1.3 薄膜之旋鍍 51
3.1.4 薄膜之熱處理 52
3.1.5 上電極之製作 52
3.2 薄膜特性分析 52
3.2.1 X光繞射分析儀（XRD）53
3.2.2 掃瞄式電子顯微鏡（SEM）53
3.2.3 膜厚量測 53
3.2.4 黏度之量測 53
3.3 薄膜電性分析 53
3.3.1 鐵電特性量測 53
3.3.2 介電特性量測 54
3.3.3 壓電特性量測 54
3.4 結果與討論 60
3.4.1 PZT薄膜厚度的影響 60
3.4.2 PZT薄膜黏度的影響 61
3.4.3 PZT薄膜燒結溫度的影響 62
3.4.3 PZT薄膜燒結方式的影響 63
3.4.5 PZT薄膜升溫速率的影響 64


第四章 壓電薄膜應用於微機電元件之製程及性能分析 105
4.1 PZT壓電式薄膜致動器(Membrane Actuator)之設計 105
4.1.1 微懸膜Membrane之結構設計 105
4.1.2 光罩之設計 106
4.1.3 製程所需之儀器設備 106
4.1.4 矽晶圓之非等向性蝕刻 107
4.1.5 PZT壓電薄膜結合Membrane之製作流程 107
4.2 PZT 微懸膜(Membrane)之振動位移量測 108
4.3 結果與討論 109
4.3.1 PZT薄膜熱處理方式對驅動微懸膜的影響 109
4.3.2 PZT薄膜厚度驅動微懸膜的影響 110
4.3.3 PZT薄膜黏度對驅動微懸膜的影響 111
4.3.4 PZT薄膜升溫速率對驅動微懸膜的影響 111
4.3.5 PZT薄膜燒結溫度對驅動微懸膜的影響 112

第五章 結 論 129
第六章 未 來 展 望 131
參 考 文 獻 132
附錄1 136

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