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研究生:謝世賢
研究生(外文):S. H. HSIEH
論文名稱:熱處理對穿隧式磁阻之影響
論文名稱(外文):The Influence of Annealing on Tunneling Magnetoresistive Multiayer Films
指導教授:陳立翰
指導教授(外文):L. H. Chen
學位類別:碩士
校院名稱:義守大學
系所名稱:材料科學與工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:98
中文關鍵詞:穿隧式磁阻
外文關鍵詞:TMR
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本實驗探討以AlOx為絕緣層之【Co(200A)/Al(10Å~20Å)Ox/Ni80Fe20(200Å)】複膜的初鍍膜與熱處理後之複膜的穿隧式磁阻和磁化行為。我們利用直流磁控濺鍍法來鍍所有的金屬層,並以高純度乾氧進行鋁層之氧化。
我們發現鋁層厚度為10Å,氧化三小時後,所得之穿隧式複膜,再經230℃持溫1小時的真空熱處理,有最佳磁阻比為0.68%。而【Co(200A)/Al(10Å~20Å)Ox/Ni80Fe20(200Å)】複膜的初鍍膜,在鋁層厚度為20Å時,氧化1小時,有最大磁阻比0.32%;【Co(200Å)/Al(20Å)Ox】氧化1小時後,再經100℃持溫1小時的真空熱處理,最後鍍上Ni80Fe20所得之穿隧式複膜,有最大磁阻比0.65%。
在本實驗中所嘗試之三種製程中,我們的到一個結果,就是鋁層厚度為10Å,氧化三小時後,所得之穿隧式複膜,再經230℃持溫1小時的真空熱處理會得到最好的磁阻特性。

The tunneling magnetoresistance and magnetic behavior of [Co(200 Å)/Al(10Å ~ 20Å)Ox/ Ni80Fe20(200 Å)] multilayer films has been studied in this work. The films were prepared by d.c. magnetron sputtering and the AlOx layer was obtained by natural oxidation of Al in an O2 atmosphere.
Upon annealing at 230 C for 1 hr, a maximum MR ratio of ~0.68% is obtained for the multilayer film with a 10 Å thick Al layer which was oxidized for 3 hr. The as-deposited film with a 20 Å thick Al and 1 hr oxidization is also found to exhibit a MR ratio of 0.32 %, which increases to ~0.65 % after annealing at 100 C for 1 hr.

中文摘要 Ⅰ
英文摘要 Ⅱ
誌 謝 Ⅲ
目 錄 Ⅳ
圖 目 錄 Ⅵ
表 目 錄 Ⅹ
第一章 緒論 01
1-1前言 01
1-2研究動機與目的 02
第二章 理論基礎 03
2-1磁性理論 03
2-1-1 物質磁性來源與分類 03
2-2磁阻的特性 04
2-2-1磁阻效應與材料 04
2-2-2磁阻材料的分類與演進 08
2-2-3磁阻材料之應用 20
2-3穿隧式磁阻的原理 26
2-3-1穿隧效應 26
2-2-2 穿隧式磁阻複膜結構與磁阻特性 27
2-4 濺鍍理論 31
2-4-1物理氣相沈積 33
2-4-2薄膜沈積原理 35
2-4-3直流濺鍍原理 38
2-4-4 直流(D.C.)濺鍍 43
2-4-5磁控濺鍍原理 44
第三章 實驗步驟 47
3-1實驗流程 47
3-2基板之前處理 48
3-3穿隧式磁阻複膜製備 50
3-4真空熱處理 51
3-5 複膜之特性量測與分析 55
第四章 結果與討論 68
4-l [Co(200Å)/Al(10∼20 Å)/NiFe(200Å)]之磁阻特性與磁化
行為 68
4-2 熱處理對[Co(200Å)/Al(10∼20 Å)/NiFe(200Å)]之磁阻特性之
影響 75
4-2-1 [Co(200Å)/Al(10~20Å)Ox /NiFe(200Å)]複膜製備完成
後再熱處理 75
4-2-2 鋁層氧化完成後熱處理 85
第五章 結論 92
參考文獻 93

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