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研究生:謝伯宗
研究生(外文):Po-Tsung Hsieh
論文名稱:壓阻式壓力感測器雙橋式溫度補償技術之研究
論文名稱(外文):Double bridge temperature compensation technique for piezoresistive pressure sensor
指導教授:汪啟茂汪啟茂引用關係張益敏
指導教授(外文):Chii-Maw UangYih-Min Chang
學位類別:碩士
校院名稱:義守大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:62
中文關鍵詞:雙橋技術壓阻式壓力感測器溫度補償
外文關鍵詞:double bridge techniquepiezoresistivepressure sensortemperature compensation
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目前壓力感測器最大的問題莫過於在溫度環境改變下交叉靈敏度的不同變化,由感測器輸出端電壓的變化及補償可清楚得知溫度改變所造成的影響。傳統的矽質壓阻式壓力感測器因受到溫度變化的影響,使得輸出電壓會產生大幅度的飄移,且未受壓力時的零點電壓也隨著產生變動,所得到的輸出結果也因此受到影響。本論文將介紹一個新的矽質壓力感測器溫度補償的技術。我們使用雙橋技術,即把原本的感測器晶片再多加上一個做為溫度補償用的晶片,將兩個晶片組合在一起來代替傳統單粒晶片的矽質壓阻式壓力感測器電路。實驗結果顯示雙橋式壓力感測器的輸出電壓飄移及零點電壓偏移的現象改善很多,另外還涵蓋了更廣大的溫度和壓力範圍且可以降低成本。在本研究中也加入了ANSYS的電腦模擬分析,能由其應力分析中瞭解壓電阻配置位置。在實驗中,我們嘗試多種溫度環境變化及不同的壓力變化,來討論傳統感測器與雙橋式壓力感測器所產生的反應及影響。

A main problem associated with piezoresistive pressure sensors is the cross sensitivity sensed among different temperature. The influence of temperature is manifested as a change in the span and offset of the sensor output. The output voltage and zero offset voltage of traditional piezoresistive pressure sensor under temperature variation have a large drift. The output result is also influenced. In this thesis, a new temperature compensation technique for a silicon pressure sensor is presented. We combine two sensors, the piezoresistive bridge and the compensation one, together to instead of the original single piezoresistive pressure sensor circuit. The experimental results show the improved output voltage and zero offset voltage drift. Besides, it covers a wider temperature and pressure range and reduces the prime cost of sensor. We also add the computer simulation analysis of ANSYS to realize the resistors location by stress analysis. In this experiment, we attempt many types of temperature and pressure environment to discuss the reaction and influence of the traditional and double bridge piezoresistive pressure sensors.

Abstract..................................................Ⅰ
Chinese Abstract..........................................Ⅱ
Contents..................................................Ⅲ
Figure List...............................................Ⅴ
Table List................................................Ⅷ
CHAPTER 1 INTRODUCTION
1.1MotivationⅤ............................................1
1.2Reference ReviewⅤ......................................3
1.3Structure of Thesis.....................................5
CHAPTER 2 FINITE ELEMENT ANALYSIS
2.1 Introduction of ANSYS..................................6
2.2 Flow path of simulation and analysis in ANSYS..........7
2.3 Simulation of membrane shape...........................9
2.4 Analysis of membrane shape............................14
CHAPTER 3 PRINCIPLE OF PIEZORESISTIVE PRESSURE SENSOR
3.1 Piezoresistive Effect
3.1.1 Principle of Piezoresistance........................17
3.1.2 Piezoresistive Effect............................22
3.2 Single Bridge Piezoresistive Pressure Sensor..........25
3.3 Double-Bridge Pressure Sensor.........................31
CHAPTER 4 FABRICATION
4.1 Basic fabrication consideration
4.1.1Oxidation............................................34
4.1.2 Photolithography....................................35
4.1.3 Etching.............................................37
4.1.4 Anodic Bonding......................................43
4.2 Experimental mechanism
4.2.1 Fabrication Process Flow Chart......................45
4.2.2 Experimental mechanism for double bridge sensors....47
CHAPTER 5 EXPERIMENTAL RESULTS............................50
CHAPTER 6 CONCLUSION AND FUTURE WORK
6.1 Conclusion............................................61
6.2 Future Work...........................................62
REFERENCE.................................................63

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