由於氮化鋁薄膜具有很多優異的特性：高熱傳導率、高絕緣電阻、高表面聲波速度、高硬度、高熔點、能帶寬與化學穩定性高等優點，使的近年來氮化鋁薄膜在各種不同的領域中，均被視為一種很有潛力的材料。
本研究是使用雙離子束濺鍍法(Dual Ion Beam Sputtering，DIBS)在矽基板上沉積氮化鋁(AlN)薄膜。雙離子束濺鍍法是結合Kaufman與End-Hall兩種不同形式離子源的薄膜沉積系統，Kaufman型離子槍主要是用來撞擊靶材，以濺射出鋁原子；而End-Hall型離子槍則是直接以氮離子撞擊基材表面。在本實驗中，我們希望能藉由改變離子束的能量及基板的溫度，以獲得壓電性強的高C軸指向(C-axis orientation)與表面平整性良好的氮化鋁薄膜，作為未來製作表面聲波元件的基礎。
由本實驗所得到的結果顯示：在固定氮氣濃度與氬氣濃度比例為1：3、工作壓力為6- 6.5×10-4Torr、離子束的加速電壓為800V而基材溫度為450℃的情況下，可獲得良好C軸指向且成份均勻的氮化鋁薄膜。

Thin films of aluminum nitride exhibit a number of interesting features such as high thermal conductivity, high electrical resistivity, high surface acoustic wave speed, high hardness, high melting points, wide band gap and chemical inertness. Owing to its excellent features, recently, AlN films have been considered a capable material for a variety of applications in different fields.
In this study, the AlN films were deposited on Si substrate using a dual ion beam sputtering (DIBS) system. The DIBS system used consists of a Kaufman ion gun which bombards the aluminum target, and an End-Hall ion gun which uses a nitrogen ion beam perpendicular to the substrate surface. The Kaufman ion gun and the End-Hall ion gun were separately adjustable. In order to obtain the C-axis oriented and smooth surface of AlN films, the ion beam voltage and substrate temperature were independently controllable.
Finally, the results showed that excellent AlN films which possess the C-axis oriented and uniform concentration were successfully synthesized using the follow parameters: ion beam voltage was maintained at 800V; the ratio of N2/Ar was 3; the working pressure was kept at 6- 6.5×10-4Torr and the substrate temperature was heated to 4500C.

中文摘要………………………………………………………..………Ⅰ
英文摘要………………………………………………………..………Ⅱ
致謝…………………………………………………………..…………Ⅲ
總目錄…………………………………………………………..………Ⅳ
表目錄…………………………………………………………………..Ⅴ
圖目錄…………………………………………………………….…….Ⅵ
第一章 前言……………………………………………………………..1
第二章 理論背景………………………………………………………..4
2.1壓電薄膜材料氮化鋁之結構與特性…………………………..4
2.2薄膜沈積理論…………………………………………………..7
2.2.1 薄膜成長及結晶性……………………………………..7
2.2.2 薄膜沉積的動力學分析………………………………..8
2.2.3 薄膜微結構的Thornton模型………………………….9
2.3 濺鍍原理……………………………………………………….9
2.3.1 電漿的形成與濺鍍原理………………………………..9
2.3.2 離子束濺鍍……………………………………………11
2.3.3 雙離子束濺鍍…………………………………………15
第三章 實驗方法與步驟………………………………………………26
3.1 濺鍍系統……………………………………………………...26
3.2 實驗材料……………………………………………………...28
3.3 實驗步驟……………………………………………………...28
3.4 薄膜材料分析………………………………………………...31
3.4.1 X光繞射分析………………………………………….32
3.4.2 掃描式電子顯微鏡分析………………………………33
3.4.3 原子力顯微鏡分析……………………………………35
3.4.5 電子能譜化學分析…………………………………....37
3.4.6 二次離子質譜分析……………………………….…...38
3.4.7 穿透式電子顯微鏡分析………………………………39
第四章 結果與討論……………………………………………………48
4.1 濺鍍參數對氮化鋁晶體結構的影響………………………...48
4.1.1 離子束電壓之影響……………………………………48
4.1.2 基板溫度之影響………………………………….…...50
4.2 濺鍍參數對氮化鋁微觀型態的影響………………...………50
4.2.1不同基板溫度對氮化鋁薄膜微觀組織之影響……….51
4.2.2不同離子束電壓對氮化鋁薄膜微觀組織之影響…….52
4.3 離子束電壓對沉積速率的影響……………………………...54
4.4 利用ESCA分析氮化鋁的成份與化學位移情形…………...55
4.5 利用SIMS分析氮化鋁的成份縱深分佈……………………57
4.6 利用AFM觀察氮化鋁的表面平整度……………….………58
4.7 穿透式電子顯微鏡(TEM)分析………………………………59
第五章 結論………………………………………………………...….97
參考文獻………………………………………………………………..99

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