臺灣博碩士論文加值系統

利用單光儀測量GaN / GaP異質結構奈米線 (hetero—structure nanowire)和GaP奈米線兩種樣品在1.5 ~ 4 eV間的吸收光譜，除了可觀測到GaP和GaN能隙的藍位移現象之外，GaN / GaP異質結構形成之位能井中所產生的量子化不連續光譜吸收峰值也可觀測到。
這些不連續光譜的吸收能量和GaP奈米線的直徑有關，經由理論方程式的計算可得知直徑的分佈在5 nm ~ 9 nm 間，以直徑7 nm的奈米線為例，觀測到的吸收峰值約在：2.3、2.4、2.55、2.71、2.9、3.3及3.55 eV這七個位置上。

摘要 ………………………………………………………… 1.
第一章 前言
1.1實驗背景與動機 ……………………………………………. 2.
1. 2塊材結構簡介 ………………………………………..……… 3.
1.2.1晶體結構 ………………………………………………... 3.
1.2.2 Band structure ……………………………………………. 5.
1.3樣品簡介 …………………………………………….…….… 6.
1.4內容簡介 …………………………………………….………. 7.
第二章 實驗步驟與量測
2.1樣品的製程 ……………………………………………….… 8.
2.1.1基底的選擇 …………………………………………….... 8.
2.1.2樣品的製程 …………………………………………….... 9.
2.2儀器量測 ……………………………………………………. 12.
2.2.1晶體結構的觀瘵 ………………………………………… 12.
2.2.2 影像的觀察 ……………………………………………… 15.
2.2.3可見光與紫外光的穿透量測 …………………………… 21.
第三章 一維奈米線的理論介紹 ……………………………27.
第四章 實 驗 結 果 與 討 論
4.1 GaN / GaP異質結構奈米線的樣品量測 …………………… 41.
4.1.1常溫下的量測結果 …………………………………….… 41.
4.1.2 低溫時的量測結果 …………………………………….. 51.
4.1.3量測結果分析 ……………………………………….…… 51.
4.2 GaP奈米線的樣品量測 … ……………………………..…… 64.
4.2.1常溫下的量測結果 ……………………………….……… 64.
4.2.2變溫時的量測結果 ……………………………….……… 64.
4.2.3量測結果分析 …………………………………….……… 64.
第五章 結論 ………………………………………………. 80.
參考資料 ……………..……………………………………. 81.

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