本研究主要探討含氮矽化鈷薄膜(CoSixNy)的性質，包括材料的應力、片電阻值、薄膜結構成份、熱穩定性等探討；在薄膜沈積方面，使用的方法是反應式濺鍍，設定三個影響實驗結果的因子，分別為直流電漿功率、沈積時壓力、薄膜的含氮量(N2 ratio；N2/Ar+N2)，樣本沈積厚度是1500Å，並採用田口實驗設計法分析薄膜應力與片電阻值，找出最佳實驗條件及影響實驗最大的因子，進行確認實驗，印證實驗分析的正確性。此外，為瞭解CoSixNy薄膜的成分及其組成，以X光繞分析儀分析樣本的相結構，並以歐傑電子能譜分析儀分析觀察薄膜的縱深及成分。
為了探討CoSixNy薄膜的熱穩定性，將此薄膜樣本以溫度400℃兩次回火處理，並觀察實驗後薄膜應力及片電阻值改變情形，而發現薄膜在經第一次回火後，應力明顯往擴張趨勢增加，且片電阻值明顯降低。而經第二次回火後，應力及片電阻值和第一次相差不遠，因此推斷CoSixNy薄膜在經400℃回火後，內應力已釋放完畢，且熱性質已趨於穩定。
本研究中為了瞭解和評估CoSixNy材料應用於微鏡面元件中鉸鏈結構的機械性質，在此設計了一個靜電致動式的微鏡面陣列元件，以IC相容製程來製作此元件，並探討及解決製程中所遇到的問題。

This research is to investigate the properties of nitrogen-doped cobalt silicide (CoSixNy) film,including stress, sheet resistance and thermal stability. The film of 1500 Å deposited by reactive sputtering in Ar carrier gas is used in this research.With N2 added in Ar carrier, the film becomes CoSixNy. It is observed that with N2 addition, the film deposition rate reduced and on the other side the sheet resistance increased sightly. With the nominal-the-best response analysis of film stress, it reveals that process pressure is the most important factor on CoSixNy film stress. From the analysis, the condition of 1000watt, 6mTorr, and 20% N2 flow ratio is selected for confirmation experiment. This condition indeed results in low tensile CoSixNy film stress of about 54 MPa. With the smaller-the-better response of CoSixNy film sheet resistance, the DC plasma power has important influence on the film. Conclusively the optimal experimental recipe for obtaining film sheet resistance is 1500watt, 4mTorr, and 10% N2 flow ratio.
As-deposited CoSixNy films have partial compressive stress, furnace annealing process at 400℃, 30min is carried out to release film stress, but some of the films are still compressive , Through the annealing experiment also shows that the more N2 flow ratio applied in reactive sputtering, the less film stress is released.
In order to evaluate the mechanical characteristic for MEMS application of CoSixNy film, we also design a micromirror device fabricated with IC compatible process, and try to analysis and solve some problems on the experiment.

摘要
目錄
表目錄
圖目錄
第一章 前言
第二章 實驗方法與原理
2.1 實驗儀器簡介
2.2 薄膜應力的來源
2.3 田口實驗設計法
2.4 CoSixNy薄膜的熱回火實驗
2.5 微鏡面元件結構及製作流程
第三章 實驗結果與討論
3.1 測試實驗之結果
3.2 田口法望目分析CoSixNy薄膜之應力
3.3 CoSixNy薄膜沈積於不同基板的應力
3.4 熱回火處理對CoSixNy薄膜應力的影響
3.5 材料的應力與應變
3.6 薄膜的熱膨脹係數
3.7 應力與溫度的關係
3.8 XRD薄膜結構分析
3.9 歐傑電子能譜儀(AES)薄膜縱深成分分析
3.10 含氮矽化鈷薄膜片電阻值分析
3.11 微鏡面結構製作結果討論
3.11.1 深孔蝕刻後的微影問題
3.11.2 CMP 犧牲層表面平坦化
3.11.3 犧牲層的移除
第四章 結論
參考文獻

[1] Marc Madou , Fundametals of Microfabrication , 1997, CRC Press LLC , USA.
[2] Gregory T.A Kovacs , Micromachined Transducers Sourcebook , 1998 , McGraw-Hill , USA.
[3] Iwao Fujimasa , Micromachines : A New Era in Mechanical Engineering , 1996 , Oxford University
Press , Oxford .
[4] Gary A Feather "The Digtal Micromirror Device for Projection Display" , 1995 IEEE Scssion 2:
ApplicationⅡ 43-51
[5] Seok-Whan Chung , Jong-Woo Shin , Young-Kweon Kim , Bong-Soo Han "Design and fabrication of
Micromirror supported by electroplated nickel posts" , Sensors and Actuators A54 (1996) 464-467
[6] W.Lang , H.Pavlicek, Th.Marx , H.Scheithauer , B.Schmidt , " Electrostatically actuated micro
devices in silicon technology" , Sensors and Actuator , 74(1999) 216-218
[7] L.J Hornbeck "Digital Light Process and MEMS: An Overview" , Spatical Light Modulators and
ApplicationsⅢ,SPIE Critical Reviews , Vol.1150, pp.86-102 (August 1989)
[8] Peter F.Van Kessel , Larry J.Hornbeck , Robert E. Meier , Michael R.Douglass "A MEMS-Based
Projection Display" , Proceeding of the IEEE ,Vol.86 , No.8 August 1998
[9] Cornel Marxer and Nicolaas F. de Rooij , "Micro-opto-machanical 2 ×2 switch for single -mode
fibers based on plasma-etched silicon mirror and electrostatic eructation " Journal of Lightwave
Technology , Vol 17 , No.1 , pp.2-6 , January 1999.
[10] Kiyotaka Wasa , Shigeru Hayakawa , Handbook of Sputter Deposition Technology , 1992 , Noyes
Publication , USA.
[11] M Elwnsspoek , H. V. Jansen , Silicon Micromachining , 1998 , Cambridge University Press ,
Australia.
[12] Fatikow , Sergej , Rembold , Ulrich , /黃淳權譯 ， 微機電概論 ，2000年9月初版，高立出版
社，台灣台北。
[13] 張俊彥主編，鄭晃忠審教，積體電路製程及設備技術手冊， 1997年7月，經濟部技術處發
行。
[14] Donald L.Smith , Thin-Film Deposition:Principles and Practice , 1999 , McGraw-Hill , USA.
[15] John L.Vossen , Werner Kern , Thin Film Processes , 1980 , Academic Press , California .
[16] Genichi Taguchi(Yuin Wu ,technical editor for the English edition ) , Taguchi Methods / Design of
Experiments , Dearborn MI / ASI Press , Tokyo .
[17] A.S.Hedayat , N.J.A.Sloane , and John Stufken , Othogonal Arrays : Theory and Applications ,
1999 , Springer , New York.
[18] Alan Wu , Robust Design Using Taguchi Methods , Workshop Manual , American Supplier Institute
(ASI) , Version 3.0 2001 .
[19] 丁志華、戴寶通，"田口實驗計畫法簡介(Ⅰ)"，毫微米通訊第八卷第三期。
[20] 莊達人，VLSI製造技術， 2000年四版，高立出版社 ，台灣台北。
[21] 施敏、張俊彥，半導體元件物理與製作技術，1999年8月三版，高立出版社，台灣台北。
[22] 陳力俊，微電子材料與製程，2000年11月初版，中國材料科學學會，台灣新竹。
[23] 蔣經華、陳宏銓，"積體電路之薄膜製造技術"，化工技術第二卷第七期。
[24] William D. Callster .Jr. , Materials Science and Engineering An Introduction , Wiley , 1993 ,USA.
[25] Karen Maex , Marc Van Rossum , Properties of Metal Silicide , 1990 , INSPEC. Kingdom.
[26] Andrew A.Quong , Amy Y.Liu , "First-principles calculation of the thermal expansion of metals" ,
1997 The American Physical Society , Volume 56 , Number 13 .
[27] Tue Nguyen , Herbert L.Ho , Tai D.Nguyen "Reaction study of cobalt and silicon nitride" , 1993
Material Research Society , J.Mater Res , Vol. 8 , No. 9 , Sep.1993.
[28] S.Zalkind , Joshua Pellag , L.Zevin and B. M. Ditchek , "In situ X-Ray diffraction measurement of
silicide formation in the Co-Si system" , Thin Solid Films , 249(1994)187-194.
[29] Kittel 原著，洪連輝編譯，固態物理學導論，1998年第七版，高立出版社，台灣台北。
[30] Chia-Hong Jan , Chia-Ping Chen ,and Y. Austin Chang , "Growth of intermedia phases in Co/Si
diffusion couples : Bulk versus thin-film studies" , 1993 American Institute of Physics , J.Appl.Phys.73(3), 1 Feb 1993.
[31] Joshua Pelleg and S.Zalkind , L.Zevin , "Silicon formation in the Co-Si system by rapid thermal annealing " , Thin Solid Films , 249(1994)126-131.
[32] S.W.Park , Y.I.Kim , J.S.Kwak and H.K. Baik , "Investigation of Co/SiC Interface Reaction" Journal of Electronic Materials , Vol.26 , No.3 , 1997.
[33] Byeong-Joo Lee , "Thermodynamic analysis of solid-state metal / Si interfacial reactions" , 1999 Material Research Society , Vol.14 , No.3 , Mar.1999.
[34] C.Zaring , A.Pisch , J.Cardenas , and P. Gas , "Solid solubility and diffusion of boron in single-
crystalline cobalt disilicide" , 1996 American Institute of Physics , Vol.80(5) , 1 Sep.1996.
[35] Jerome B. Lasky , James S. Nakos , Orison J. Cain , and Peter J. Geiss , "Comparision of
Transformation to Low-Resistivity Phase and Agglomeration of TiSi2 and CoSi2" , IEEE Transaction
on Electron Device , Vol. 38 , No.2 , Nov.1991.
[36] 龍文安，積體電路微影製程，1998年7月初版，高立出版社，台灣台北。
[37] 廖木桂，微壓力感測器之薄膜形變，2001年6月，成大航太所碩士論文。
[38] 翁士元，"薄膜蝕刻技術"，電子月刊第二卷第七期。
[39] Kirt R. Williams , Richard S. Muller , "Etch Rates for Micromachining Processing" , Journal of Microelectromechanical System , Vol.5 , No.4 , Dec.1996.