跳到主要內容

臺灣博碩士論文加值系統

(54.83.119.159) 您好!臺灣時間:2022/01/17 10:06
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:吳家進 
研究生(外文):Chia Chin Wu
論文名稱:用負載拉移的方法分析雙載子和異質接面雙載子電晶體的功率特性
論文名稱(外文):Analysis of BJT and HBT power performance by Load-Pull method
指導教授:孟慶宗
指導教授(外文):C. C. Meng
學位類別:碩士
校院名稱:國立中興大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:147
中文關鍵詞:元件結構功率特性負載阻抗增益壓縮機制
外文關鍵詞:HBTdevice layer structureload pullgain compression mechanism
相關次數:
  • 被引用被引用:0
  • 點閱點閱:728
  • 評分評分:
  • 下載下載:157
  • 收藏至我的研究室書目清單書目收藏:0
本論文主要分為四個部分,第一部份是介紹BJT和HBT的基本原理;第二部分是HBT元件結構的量測和分析;第三部分是分析BJT在基極定電流以及基極定電壓,這兩種不同偏壓方式之下的功率特性和增益壓縮機制;第四個部分則是分析HBT在基極定電流以及基極定電壓,這兩種不同偏壓方式之下的功率特性。
在HBT的元件結構分析方面,我們有特別的方法可以求出元件的摻雜和厚度;在基極定電流的偏壓方面,我們觀察其基極電壓、集極電流和電流增益,來判斷BJT不同的增益壓縮機制;在基極定電壓的偏壓方面,我們可以利用平均電流增益的下降,來判斷BJT大信號增益的壓縮;此外,我們也比較了HBT在基極定電流和基極定電壓,這兩種偏壓方式之下不同的功率特性;另外,對於偏壓在相同的偏壓點,但是負載阻抗卻不同的情形也作了分析,我們發現高的負載阻抗和低的負載阻抗,會有不同的功率特性。
This thesis is divided into four subjects. The first subject is the basic theory of BJT and HBT. In the second subject we analyze layer structure of HBT device. In the third subject we analyze the power performance and gain compression mechanism of BJT when it bias at constant base current and constant base voltage. In the fourth subject we analyze the power performance of HBT when it bias at constant base current and constant base voltage.
For the analysis of HBT device structure, we have developed a special method to find out device doping and thickness. For constant base current, we determine the gain compression mechanism of BJT by observing base voltage, collector current and average beta. For constant base voltage, we determine the gain compression mechanism of BJT by the decreasing of average beta. Moreover, we compare the power characteristics of HBT when it bias at constant base current and constant base voltage. Furthermore, we also analyze the power performance when it bias at the same point with different load impedance. Finally, we found that different load impedance get different results.
摘要(中文)………………………………………………………………….i
摘要(英文)………………………………………………………………....ii
誌謝………………………………………………………………………..iii
目錄………………………………………………………………………..iv
圖目錄…………………………………………………………………..…vi
第一章 簡介……………………………………………………………….1
第二章 基本理論………………………………………………………….3
2.1 Cut-off Frequency (FT)……………………………………………3
2.2 HBT的exponential I-V特性…………….…........………………6
2.3 HBT的Two-tone特性……………………………………....…..15
2.4 Kirk Effect………………………………………………….……21
2.5 Early Effect………………………………………………………26
2.6 Thermal Effect in HBT…………………………………………..29
第三章 InGaP/GaAs HBT的元件結構………………………………...31
3.1本章目的…………………………….……………………….….31
3.2集極和射極的doping和thickness……………………………....33
3.3基極的thickness和doping……………..………………….….....43
3.4 Ledge的厚度……………………………………...………….…48
3.5 InGaP/GaAs HBT的重要參數………………………………….53
3.6 InGaP/GaAs HBT的 …………………………………….…54
第四章 BJT的高頻功率特性…………………………………………...57
4.1 BJT基極定電流的增益壓縮機制…….……………..……….…57
4.2 BJT基極定電流的短軸量測結果……………..………….….…76
4.3 BJT基極定電壓的增益壓縮機制……………………..……..…93
4.4 BJT基極定電壓的短軸量測結果…………..…………………102
第五章 HBT的高頻功率特性…………………..…………………..…111
5.1 HBT基極定電壓以及定電流的分析………………………….111
5.2 HBT基極定電壓的短軸量測結果………………………..…..124
第六章 結論……………………………………………………...……..135
參考文獻…………………………………………………………...……137
Appendix A…………………………………………..……….………....139
Appendix B…………………………………………..……………….....142
Appendix C…………………………………………..…….………...….146
[1] William Liu, “Handbook of III-V Heterojunction Bipolar Transistors,” New York: John Wiley & Sons, 1998..
[2] “LP1 Load Pull System Manual Set” ATN microwave, inc
[3] C.H. Chang “The Analysis of RF Power Amplifier”
[4] A.S. Peng “The Analysis of HBT and PHEMT Power Devices.”
[5]SteveC. Cripps, “RF Power Amplifiers for Wireless Communications”, Artech House
[6] Robert G. Meyer and Richard S. Muller ’’Charge-Control Analysis of the Collectoe-Base Space-Charge-Region Contribution to Bipolar Transistor Time Constant.’’, IEEE Transactions on Electron Devices, Vol. ED-34, NO. 2 FEBRUARY 1987.
[7] W. Liu, T. Henderson, E. Beam III and S.K. Fan ’’Electron saturation velocity in Ga0.5In0.5P measured in a GaInP/GaAs/GaInP double heterojunction bipolar transistor.’’ Electronics Letters 14th October 1993 Vol. 29 NO. 21
[8] S.M. Sze, “High-Speed Semiconductor Devices”: Willey Interscience.
[9] C. C. Meng, C. H. Chang, J. F. Kuan and G. W. Huang “ Direct Observation of Loadlines in MESFET by Using Average RF Gate and Drain Currents. ”
[10] J. Walker, "High power GaAs FET amplifier", Artech House.
[11] J.W. Chen ”Gain Compression Mechanisms、Power Saturation” Mechanisms and Linearity in Power MESFETs”
[12] S. C. Cripps, “A Theory for The Prediction of GaAs FET Load-Pull Power Contours”, IEEE MTT-S Digest,1983.
[13] Taisuke Iwai , Shiro Ohara , Hiroshi Yamada , Yasuhiro Yamaguchi , Kenji Imanishi , and Kazukiyo Joshin , “High Efficiency and High Linearity InGaP/GaAs HBT Power Amplifiers : Matching Techniques of Source and Load Impedance to Improve Phase Distortion and Linearity.” , IEEE Transactions on Election Devices , vol. 45, NO. 6, JUNE, 1998.
[14] Fadhel M. Ghannouchi , Guoxiang Zhao , and Francois Beauregard , “Simultaneous Load-Pull of Intermodulation and Output Power Under Two-Tone Excitation for Accurate SSPA ’s Design.”, IEEE Transactions on Microwave Theory and Techniques , vol. 42, NO. 6, JUNE, 1994.
[15] Toshihiko Yoshimasu”High Power AlGaAs/GaAs HBTs and Their Application to Mobile Communications Systems” New Device Promotion Center, Tenri IC Grouop, SHARP Corporation.
[16] Snider, D. M.(1967), “A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier”, IEEE Trans, Electron Devices, Vol 14, P851-857.
[17] Hector Gutierrez, Kevin Gard, and Michael B. Steer, “Nonlinear Gain Compression in Microwave Amplifiers Using Generalized Power-Series Analysis and Transformation of Input Statistics”, IEEE Transactions on Microwave Theory and Techniques, vol. 48, NO.10, OCTOBER, 2000.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關論文