參考文獻
[Bhushan et al., 1995] M. Bhushan, R. Rouse, and J. E. Lukens, 1995, “Chemical- Mechanical Polishing in Semidirect Contact Mode,” Journal of Electrochemical Society, Vol. 142, pp. 3845-3851.
[Bianchi & Galvele, 1993] G. L. Bianchi and J. R. Galvele, 1993, “Stress Corrosion of Pure Copper and Pure Silver in Gaseous Environments,” Corrosion Science, Vol. 34, No. 9, pp. 1411-1422.
[Chen et al., 1999] H. C. Chen, M. S. Yang, J. Y. Wu and W. Lur, 1999, “The Investigation of Electroplating Deposited Copper Films for Advanced VLSI Interconnect ,” International Interconnect Technology Conference, pp. 65-67.
[Cook, 1990] L. M. Cook, 1990, “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solids, Vol. 120, pp. 152-171.
[Gutmann et al., 1995] R. Gutmann, J. Steigerwald, L. You, D. Prilce, J. Neirynck, D. Duquette and S. Murarka, 1995, “Chemiacl-Mechanical Polishing of Copper with Oxide and Polymer Inter-Level Dielectrcs ,” Thin Solid Film, Vol. 270, pp.596-600.
[Gotkis et al., 1998] Y. Gotkis, D. Schey, S. Alamgir, J. Yang, and K. Holland, 1998, “Cu CMP with Orbital Technology: Summary of the Experience,” IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 364-371.
[Jiang et al., 1998] J. Jiang, F. Sheng, and F. Ren, 1998, “Modeling of two-body Abrasive Wear under Multiple Contact Condition,” Wear, Vol. 217, pp. 35-45.
[Jones, 1992] D. A. Jones, 1992, Principles and Prevention of Corrosion, Maxwell Macmillan, Canada.
[Kaufman et al., 1991] F. B. Kaufman, D. B. Thmpson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Pearson, and M. B. Small, 1991, “Chemiacl-Mechanical Polishing for Fabricating Patterned with Metal Feature as Chip Interconnects, ” Journal of Electrochemical Society, Vol. 138, No.11, November.
[Keller et al., 1997] R. M. Keller, S. P. Baker and E. Arzt, 1999, “Stress-Temperature Behavior of Unpassivated Thin Copper Films,” Acta Mater. Vol. 47, No, pp. 415-426.
[Komanduri et al., 1997] R. Komandduri, D. A. Kucca and Y. Tani, 1997, “ Technological Advances in Fine Abrasive Processes,” Annals of the CIRP, Vol. 46, pp. 545-595.
[Kondo et al., 2000] S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, and N. Owada, 2000, “Abrasive-Free Polishing for Copper Damascene Interconnection,” Journal of Electrochemical Society, Vol. 147, pp.3907-3913.
[Lee et al., 2001] H. Lee, S. D. Lopation, Ann F. Marshall, and S. Simon Wong, 2001, “Evidence of Dislocation Loop as a Driving Force for Self-Annealing in Electroplated Cu Films, ” International Interconnect Technology Conference.
[Liu et al., 1996] C. W. Liu, B. T. Dai, W. T. Tseng, and C. F. Yeh, 1996, “Modeling of the Wear Mechanism During Chemical-Mechanical Polishing,” Journal of Electrochemical Society, Vol. 143, pp. 716-721.
[Luo & Dornfeld, 2001] J. Luo and D. A. Dornfeld, 2001, “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,” IEEE Transaction Semiconductor, Vol. 14, No. 2, May.
[Nguyen et al., 2001] V. H. Nguyen, A. J. Hof, H. van Kranenburing, P. H. Woerlee, F. Weimar, 2001, “Copper Chemical Mechanical Polishing Using a Slurry-Free Technique,” Microelectronic Engineering, Vol. 55, pp.305-312.
[Oettel & Wiedemann, 1995] H. Oettel, R Wiedemann, 1995, “Residual Stress in PVD Hard Coatings,” Surface and Coating Technology, Vol.76-77, pp.265-273.
[Pauleau, 2001] Y. Pauleau, 2001, “Generation and Evolution of Residual Stress in Physical Vapour-Deposited Thin Films,” Vacuum, Vol. 61, pp. 175-181.
[Proost et al, 1997] J. Proost, A. Witvrouw, P. Cosemans, Ph. Roussel, K. Maex, 1997, “Stress Relaxation in Al(Cu)Thin films”, Microelectronic Engineering, Vol. 33, pp.137-147.
[Ramprasad & Radha, 1989] B. S. Ramprasad and T. S. Radha, 1989, “Thermal Stress in Thin Film Using Real-Time Holographic Interferometry,” IEEE, pp. 29-32.
[Riedel et al., 1997] S. Riedel, J. Rober, S. E. Schulz, T. GeBner, 1997, “Stress in Copper Films For Interconnects,” Microelectronic Engineering Vol. 37/38, pp. 151-156.
[Runnels, 1994] S. R. Runnels, 1994, “Feature-Scale Fluid-Based Erosion Modeling for Chemical-Mechanical Polishing,” Journal of Electrochemical Society, Vol. 141, pp. 1900-1904.
[Runnels & Eyman, 1994] S. R. Runnels and L. M. Eyman, 1994, “Tribology Analysis of Chemical-Mechanical Polishing,” Journal of Electrochemical Society, Vol. 141, pp. 1698-1701.
[Runnels et al., 1998] S. R. Runnels, I. Kim, J. Schleuter, C. Karlsrud, and M. Desai, 1998, “A Modeling Tool for Chemical-Mechanical Polishing Design and Evaluation, ” IEEE transaction semiconductor, Vol. 11, No. 3, august.
[Shi et al., 1998] F. G. Shi, B. Zhao and S.-Q. Wang, 1998, “ A New Theory for CMP with Soft Pads ,” International Interconnect Technology Conference, pp.98-73.
[Teixeira, 2001] Teixeira, 2001, “Mechanical Integrity in PVD Coating Due to The Presence of Residual Stresses, ” Thin Solid Films, Vol. 392, pp. 276-281.
[Tichy et al., 1998] J. Tichy, J. A. Levert, L. Shan, and S. Danyluk, 1999, “Contact Mechanics and Lubrication Hydrodynamics of Chemical-Mechanical Polishing,” Journal of Electrochemical Society, Vol. 146, pp. 1523-1528.
[Weihnacht & Bruckkner, 2001] V. Weihnacht and W. Bruckkner, 2001, “Dislocation Accumulation and Strengthening in Cu Thin Films,” Acta mater, Vol. 49, pp. 2365-2372.
[Xie & Bhushan, 1996] Y. Xie, and B. Bhushan, 1996, “Effects of Particle Size, Polishing Pad and Contact Pressure in Free Abrasive Polishing,” Wear, Vol. 200, pp. 281-295.
[Yu et al., 1993] T. K. Yu, C. C. Yu, M. Orlowski, 1993, “A Statistical Polishing Pad Model for Chemical-Mechanical Polishing,” International Electron Devices Meeting Technical Digest, pp. 865-868.
[Yu et al., 1994] T. K. Yu, C. C. Yu, M. Orlowski, 1994,“Combined Asperity Content and Fluid Flow Model for Chemical-Mechanical Polishing,” Proceedings of IEEE International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, pp. 29-34.
[陳,譯1989] 陳皇鈞,1989,材料科學與工程-下冊,曉園出版社。
[廖,譯1990] 廖啟民,1990,“鋁合金之應力腐蝕裂縫成長”,防蝕工程 第四卷第三期,第36-60頁。
[曾&施,1991] 曾銘棟,施漢章,1991,“90-10銅鎳合金冷凝管腐蝕與沖蝕研究”,防蝕工程,第五卷第二期,第1-7頁。
[柯,1995] 柯文賢,1995,腐蝕及其防制,全華科技圖書股份有限公司。
[曾,1996] 曾偉志,1996,“機械應力在化學機械拋光製程中所扮演的角色”,毫微米元件實驗室通訊,第三卷第二期。
[戴,1997] 戴寶通,1997,“化學機械研磨機制探討及耗材的發展”,電子月刊,第三卷第三期,頁63-67。[鮮,1998] 鮮祺振 編譯,1998,腐蝕控制,徐氏基金會出版。
[蔡&鄭,2000] 蔡宏榮和鄭友仁,2000,“晶圓化學機械研磨之顆粒研磨漿料的磨潤分析”,第24屆全國力學會議論文集(p001)。
[蔡,1999] 蔡明義,1999,晶圓化學機械平坦化製程之機械磨耗機制研究與實驗探討,國立中興大學機械工程學系碩士論文。[蔡,2000] 蔡明蒔,2000,“金屬薄膜化學機械研磨技術於多層嵌入式連線製程之應用”,電子材料,第六期,頁114-119。
[周,2000] 周孟賢,2000,化學機械研磨時控製程參數最佳化技術,國立中興大學機械工程學系碩士論文。[劉,2000] 劉興村,2000,低介電常數材料對二氧化矽覆蓋層化學機械研磨行為之影響,國立中興大學機械工程學系碩士論文。[陳,2000] 陳辰靜,2000,銅金屬嵌入式導線之化學機械研磨技術研究,國立交通大學材料科學與工程研究所碩士論文。[陳,2000] 陳俊達,2000,銅膜之化學機械研磨製程應力作用對磨潤化學反應速率之影響,國立成功大學機械工程學系碩士論文[蔡,2001] 蔡依良,2001,銅金屬在化學機械平坦化製程研將中電化學行為之研究,國立清華大學材料科學工程學系碩士論文。[劉,2001] 劉大中,2000,化學機械拋光磨耗機制之研究,國立中興大學機械工程學系碩士論文。