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研究生:陳朝煌
研究生(外文):Chao-Huang Chen
論文名稱:Sb2Se3相變型光碟材料之研究及熱傳之有限元素法模擬
論文名稱(外文):A study of Sb2Se3 phase-change optical recording material and disc simulations by finite-element method
指導教授:陳進成陳進成引用關係
指導教授(外文):Chin-cheng Chen
學位類別:碩士
校院名稱:國立成功大學
系所名稱:化學工程學系碩博士班
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:145
中文關鍵詞:相變型光碟
外文關鍵詞:Sephange-changeSb
相關次數:
  • 被引用被引用:4
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  • 下載下載:94
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相變型光碟以材料的結晶態與非結晶態間的轉換來做為記錄資訊的方法,高結晶速度是作為相變型光碟記錄材料的基本條件,目前商業上最常用之兩種相變型光碟材料分別為GeSbTe(快速成核)與AgInSbTe(快速結晶)。但此二者都是以SbTe合金系的共晶材料為主,再進行添加適當的他種元素而製成。Se與Te同為硫屬元素且比起Te具有較佳抗氧化性及抗化學性,因此SbSe合金系材料為一個具有潛力及值得開發研究的材料。

本研究利用真空共蒸鍍之方式分別在PC基板與玻璃基板上製備Sb2Se3合金記錄薄膜。接著分別在不同操作條件下進行N2氣氛熱處理實驗以及半導體雷射掃描實驗,藉以探討熱處理溫度與時間對薄膜結晶情形的影響以及雷射參數(掃描速度與功率)對薄膜溶解情形及結構的影響。此外,也利用微分熱差掃瞄分析(DSC)來瞭解此材料的結晶溫度。實驗結果顯示經熱處理後,薄膜均會產生相變化(從非晶態轉為結晶態),而不同熱處理溫度將造成不同的結晶面。而薄膜在經雷射掃描後有熔解流動現象,同時由於表面張力作用而形成球形顆粒。越大的功率與越低的轉速造成越大的熔解的寬度與深度。另外,由微差掃瞄熱卡計(DSC) 所量測之薄膜結晶溫度約為132℃,結晶活化能約1.8e.v.,與一般相變型光碟材料相比略顯偏低。

在光碟熱傳模擬方面,由於關於SbSe合金材料物性的文獻缺乏,我們首先根據雷射掃描實驗結果,以類似逆向熱傳的概念加上參數調和(Parameter fitting)方式找出此材料熱傳導對溫度的函式,再將其代入程式模擬。模擬結果顯示此碟片有在高轉速下進行記錄的潛力。
In rewritable phase-change optical recording media, the data are recorded based on the differences in reflectivity between crystalline and amorphous state. SbTe-based eutectic alloy material series, which have fast crystallization rate, were the most popular phase-change recording medium to date. Another chalcogenide material, SbSe eutectic alloy, was considered to have great potential to be a better phase-change optical recording media because that element Se has better anti-oxidation ability than Te.

In the present study, Sb2Se3 alloy film was prepared by vacuum co-deposition, following by a heat-treatment at N2 atmosphere and the scanning of a diode laser. The XRD results show that the phase of Sb2Se3 alloy film changes from amorphous state to crystalline state after heat-treatment. Furthermore, different crystalline orientations were observed after heat-treatment at different temperature, and SEM images prove the presence of crystalline morphology of Sb2Se3 film after heat-treatment. From the OM images and SEM images, one observed that after the Sb2Se3 film scanned by a diode laser, there are morphology changes, surface melting and flow of film. A wilder and deeper melt zone of film is observed when the film was scanned by a laser at higher power or lower speed .The crystallization temperature of Sb2Se3 alloy material is measured by DSC, and is determined to be about 132℃.

The finite element method was applied to solve for the 3 dimensional temperature profile of the disc. The results indicate that data can be recorded on the disc at very high scanning speed either in CD system(λ=780nm)or DVD system(λ=640nm). The recorded-mark size as well as peak temperature of recording film were proportional to laser power, but inversely proportional to scanning speed, and the cooling rate was proportional to scanning speed. The recorded-mark size was proportional to the parameter group (P1Vx-0.2).
中文摘要 Ⅰ
英文摘要 Ⅱ
誌謝 Ⅲ
總目錄 Ⅳ
照片目錄 Ⅶ
表目錄 IX
圖目錄 Ⅹ
符號說明 XⅣ
第一章 緒論
1-1 光碟記錄的發展 1
1-2 文獻回顧 4
1-3 本文探討內容 12
第二章 理論
2-1 相變型光碟記錄原理 14
2-2 相變型光碟的薄膜結構 16
2-3 熱傳模式 26
2-4 非線性熱傳數值模擬 30
2-5 有限元素法基本概念 31
2-6 有限元素法之流程 32
第三章 實驗
3-1 實驗流程 45
3-2 基板與材料的準備 47
3-3 薄膜的製備 49
3-3-1 真空蒸鍍系統 49
3-3-2 共蒸鍍程序及條件 53
3-4 乾燥N2氣氛熱處理程序及其系統 54
3-5 雷射掃描熱處理程序及其系統 57
3-6 薄膜分析 60
3-6-1 膜厚分析 60
3-6-2 表面結構與晶像觀察 60
3-6-3 熱性質分析 61
第四章 結果與討論
4-1 初鍍薄膜之組成與晶相分析 62
4-2 熱差掃瞄(DSC)分析結果 66
4-3 乾燥N2氣氛熱處理結果分析 70
4-3-1 熱處理時間對薄膜結晶之影響 70
4-3-2 熱處理溫度對薄膜結晶之影響 71
4-4 雷射掃描後薄膜表面型態之觀察 83
4-5 Sb2Se3熱傳導係數之參數調和(Parameter fitting) 98
4-6 碟片結構設計 108
4-6-1 膜層厚度之設計 108
4-6-2 數值模擬中各膜層之分割格數 109
4-7 光碟熱傳模擬結果分析 111
4-7-1 雷射參數對碟片最高溫度之影響 113
4-7-2 雷射參數對記錄跡之影響 113
4-7-3 估計冷卻速率與加熱速率 120
4-7-4 雷射參數對冷卻速率之影響 121
4-7-5 雷射參數群與碟片性質之關係 123
4-8 碟片之動態寫擦結果探討 127
第五章 結論 128
參考文獻 130
附錄一 135
自述 145
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