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研究生:陳靜怡
研究生(外文):Chien-Yi Chen
論文名稱:氧化鋅中介層對ITO透明導電膜性質之影響
論文名稱(外文):Effect of ZnO Interlayer on the Growth Characteristics and Properties of Transparent Conductive ITO Thin Films
指導教授:洪敏雄洪敏雄引用關係吳南均
指導教授(外文):Min-hsiung Hon
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:84
中文關鍵詞:銦錫氧化物氧化鋅透明導電膜
外文關鍵詞:ITOZnO
相關次數:
  • 被引用被引用:57
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  • 下載下載:630
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本研究利用射頻磁控濺鍍法,分別於康寧玻璃Code 1737F及預鍍ZnO中介層的康寧玻璃上沉積ITO透明導電膜。探討製程參數對ITO膜性質之影響,及ZnO中介層的厚度與結晶性對ITO膜之結構、電性及可見光穿透率之影響。
實驗結果顯示,提高射頻功率、降低工作壓力、增加基板溫度,在低氧分壓及適當厚度下能提高ITO薄膜的導電性。提高射頻功率及降低工作壓力,ITO薄膜傾向以[400]為優選方向;提高氧分壓、增加沉積時間及基板溫度則以[222]為優選方向。
在添加中介層的實驗中發現:ZnO中介層對ITO薄膜[222]擇優取向有強化的作用,結晶性ZnO中介層有助於提昇ITO薄膜之結晶性,但ZnO中介層厚度對ITO薄膜性質的影響並不明顯。以ZnO中介層為基材,提高基板溫度與ITO鍍膜厚度可進一步強化ITO[222]之優選方向。在電性方面,ZnO中介層稍微降低了ITO薄膜之電阻率,若結合適當的ITO膜厚度(140~280nm)及基板溫度(250~350℃),可得到較低的電阻率,約為6.83×10-4Ω·cm。添加ZnO中介層對複合膜之可見光穿透率之影響不大,其穿透率皆在80﹪以上。
Transparent conducting indium tin oxide (ITO) thin films were deposited on both blank glass and ZnO-coated glass (Corning 1737) by RF magnetron sputtering. Two main issues were investigated. One part was the process parameter effects on the characteristics of indium tin oxide thin films. The other was the dependence of structure, electrical, and optical properties of ITO thin films deposited on ZnO-coated substrate on the thickness and crystallinity of ZnO interlayer.
The experimental results showed that the conductivity of ITO thin films increased at high sputtering power, low working pressure, higher substrate temperature, low oxygen pressure, and optimum thickness. The (400) preferred orientation appeared at high sputtering power and low working pressure. The (222) orientation increased as oxygen pressure, deposition time and substrate temperature were increased.
The experimental results showed that the ITO thin films favored (222) orientation as ZnO interlayer was applied. The crystallinity of ITO thin films increased as the crystallinity of ZnO interlayer increased. The ZnO interlayer thickness did not have significant effect on the properties of ITO films. As a thin ZnO interlayer was applied, the degree of ITO (222) preferred orientation increased with the increase of substrate temperature and ITO film thickness. For electrical property, the resistivity of ITO films decreased as ZnO interlayer was applied. The lowest resistivity of 6.83×10-4Ω·cm was obtained for ITO films deposited on ZnO/glass substrate in the conditions of an appropriate combination of ITO thickness (about 140-280nm) and substrate temperature (250~350℃). The ITO films on ZnO/glass substrate obtained showed a visible transmittance above 80%.
摘要 Ⅰ
英文摘要 Ⅱ
總目錄 Ⅲ
圖目錄 Ⅴ
表目錄 Ⅸ

第一章 緒論 1
第二章 理論基礎 4
2-1 濺鍍原理 4
2-1-1電漿原理 4
2-1-2射頻放電 6
2-1-3磁控濺鍍法 7
2-2 薄膜成核成長理論 7
2-3 ITO透明導電薄膜之性質 9
第三章 實驗方法與步驟 16
3-1 實驗流程 16
3-2 實驗材料 17
3-3 實驗系統說明 18
3-4 鍍膜參數及步驟 20
3-5 鍍膜熱處理步驟 21
3-6 薄膜性質測試與分析 21
第四章 結果與討論 24
4-1 製程參數對ITO透明導電薄膜之影響 24
4-1-1 製程參數對ITO鍍膜結構之影響 24
4-1-2 製程參數對 ITO鍍膜電性之影響 33
4-1-3 製程參數對ITO鍍膜可見光穿透率之影響 40
4-2 ZnO中介層對ITO之影響 46
4-2-1 ITO/ZnO鍍膜結構 46
4-2-2 ITO/ZnO鍍膜電性 67
4-2-3 ITO/ZnO鍍膜可見光穿透率 74
第五章 結論 78
參考文獻 79
參考文獻

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