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1.Shyam P. Murarka, “Multilevel interconnections for ULSI and GSI era”, Materials Science and Engineering, pp. 87-151 (1997). 2.R. Carpio, J. Farkas, and R. Jairath, "Initial Study on Copper CMP Slurry Chemistries", Thin Solid Film, 266, pp. 238-244 (1995). 3.R. Gutmann, J. Steigerwald, L. You, D. Price, J. Neirynck, D. Duqutte, and S. Murarka, “Chemical-Mechanical Polishing of copper with oxide and polymer inter-level dielectrics”, Thin Solid Film 270, pp. 596-600 (1995). 4.M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions, NACE, Houston, TX (1975). 5.H. Hirabayashi, M. Higuchi, M. Kinoshita, H. Hagasaka, K. Mase, J. Oshima, “Proceedings of the 1st International VMIC Specialty Conference on CMP Planarization ”, Santa Clara, CA, Feb., p. 119 (1996). 6.J. M. Steigerwald, S. P. Murarka, R. J. Gutmann, in “Chemical Mechanical Planarization of Microelectronic Materials”, John & Wiley Sons, Inc., NY (1997). 7.D. Zeidler, Z. Stavreva, M. Plotner, K. Drescher, “Characterization of Cu chemical-mechanical polishing by electrochemical investigations”, Microelectronic Engineering, 33, pp. 259-265 (1997). 8.Stavreva, Z. Zeidler, M., and Drescher, "Characteristic in Chemical -Mechanical Polish of Copper: Comparison of Polishing Pads" Applied Surface Science, 108, pp. 39-44 (1997). 9.Stavreva, Z. Zeidler, D. Plotner, M., and Drescher, “Influence of Process Parameters on Chemical-Mechanical Polish of Copper”, Microelectronic Engineering, 37 / 38, pp. 143-149 (1997). 10.Stavreva, Z. Zeidler, D. Plotner, M., Grasshoff, and Drescher, "Chemical-Mechanical Polish of Copper for Interconnect Formation" Microelectronic Engineering, 33, pp. 247-259 (1997). 11.Fayolle, M. and Romagna, F., "Copper CMP Evaluation: Planarization issues", Microelectronic Engineering, 37 / 38, pp. 135-141 (1997). 12.Fayolle, M., Sicurani, E., and Morand, Y., "W CMP Process Integration: Consumables Evaluation-Electrical Results and End Point Detection", Microelectronic Engineering, 37 / 38, pp. 347-352 (1997). 13.Q. Luo, D. R. Campbell, S. V. Babu, “Proceedings of the 1st International VMIC Specialty Conference on CMP Planarization, Santa Clara, CA, Feb., p. 145 (1996). 14.Seiichi Kondo, Noriyuki Sakuma, Yoshio Homma and Naofumi Ohashi, “Chemical Mechanical Polishing of Copper Using Silica Slurry”, Electrochemical Society Processing Vol. 98-6m, p.195 (1998). 15.V. Nguyen, H. VanKranenburg, P. Woerlee, “Dependency of dishing on polish time and slurry chemistry in Cu CMP, ” Microelectronic Engineering 50, pp. 403-410 (2000). 16.K. Osseo-Asare Kamal K. Mishra, “Solution Chemical Contraints in the Chemical Mechanical Polishing of Copper: Aqueous Stability Diagrams for the Cu-H2O and Cu-NH3-H2O Systems”, Journal of Electronic Materials, Vol. 25, No.10, p. 1599 (1996). 17.R. J. Gutmann, J. Steigerwald, D. J. Duquette, S. P. Maraka, Journal of the Electrochemical Society, Vol. 142, No. 7, p. 2379 (1995). 18.R. Gutmann, J. Steigerwald, L. You, D. Price, J. Neirynck, D. Duqutte, and S. Murarka, “Chemical-Mechanical Polishing of copper with oxide and polymer inter-level dielectrics”, Thin Solid Film, Vol. 270, pp. 596-600 (1995). 19.A. E. Bolzan, I. B. Wakenge, R. C. Salvarezza, A. J. Arvia, “The behavior of copper in aqueous thiourea-containing sulphuric acid solution”, Journal of Electroanalytical Chemistry, Vol. 501, pp. 241-252 (2001). 20.E. Stupnisek, N. Galic, and R. Gasparac, ”Corrosion Inhibition of Copper in Hydrochloric Acid Under Flow Conditions”, Corrosion, Vol. 56, No.11, pp. 1105-1111 (2000). 21.M. E. Folquer, S. B. Ribotta, S. G. Real, and L. M. Gassa “Study of Copper Dissolution and Passivation Processes by Electrochemical Impedance Spectroscopy ”, Corrosion Science, Vol. 58, No.3, pp. 240-247 (2002). 22.S. Zhou, M. M. Stack and R. C. Newman, “Electrochemical Studies of Anodic Dissolution of Mild Steel in a Carbonate-Bicarbonate Buffer Under Erosion-Corrosion Conditions”, Corrosion Science, Vol. 38, No.7, pp. 1071-1084 (1996). 23.M. Eisenberg, C. W. Tobias and C. R. Wilke, Journal of the Electrochemical Society, Vol. 101, p306 (1954). 24.Practical Surface Analysis, second editon, John &Wiley (1994). 25.Jun Itoh, Taeshi Sasaki, Toshiaki Ohtsuka, “The Influence of oxide layers on initial corrosion behavior of copper in air containing water vapor and sulfur dioxide”, Corrosion Science, pp. 1539-1551 (2000). 26.F. B. Kaufman, et al., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”, Journal of the Electrochemical Society, Inc., No.11, Nov., p.3460 (1991). 27.I. D. Zaytsev, G. G. Aseyev, Properties of Aqueous Solutions of Electrolytes (1998)
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