臺灣博碩士論文加值系統

高溫超導塊材SmBa2Cu3O7由於peak effect的效應，所以在磁浮力方面的應用相當的具有實用的價值，無論是作為磁體或磁軸承等應用，我們都需要較大尺寸的單晶粒塊材，前人研究結果得知以添加Sm210取代Sm211的方式才能在大氣氣氛下成長出高TC的SmBCO塊材，但添加Sm210會使塊材的單晶粒不易成長較大的尺寸，故本實驗中利用同時添加不同比例的Sm211及Sm210來成長出性質良好且較容易成長單晶粒的超導SmBCO塊材。
本研究發現若Sm211/Sm210的比值小於2時，SmBCO即能有良好的TC( 90K以上)，配合一般常用來提昇JC的Pt、Pd添加物，在77K、零磁場時其JC可達2×104A/cm2。在直徑20mm、厚度5mm的塊材，其磁浮力也可達850gw、擄獲磁通也達1.2kGauss。此一超導性質表現和僅添加Sm210的樣品的表現相近，且其單晶粒成長結果較僅添加Sm210的樣品良好，因此我們也以此一成分成長出單晶粒面積達590mm2的SmBCO塊材。

SmBa2Cu3O7 superconductor has potential for magnetic levitation application, because its peak effect could keep high JC in larger applied magnetic field. A large sized single grain of SmBCO superconductors are required to apply to magnetic bearings. Previous studies show that by adding Sm210 to replace Sm211 into SmBCO bulk high TC Sm-Ba-Cu-O samples can be grown in air atmosphere. But adding Sm210 will raise difficulties in growth of single grain. In this study, we add different ratio of Sm211 and Sm210 at the same time to obtain both good superconductivity and growth of single grain Sm-Ba-Cu-O samples.
It is found that the TC of SmBCO is above 90K when Sm211/Sm210 ratio is lower than 2. By adding both Sm211 and Sm210, the single grain sample size of 5mm×ψ20mm with high JC (2×104A/cm2, 77K, 0T), levitation force (850gw), and trapped field (1.2kGauss) can be achieved. Those data show similar superconducting properties to the sample which was adding only Sm210 (without Sm211), and the single grain size is larger. And has been grown a SmBCO single grain about 590mm2.

摘要 I
Abstract II
目錄 III
圖目錄 V
表目錄 VIII
第一章 緒論 1
1前言 1
1-2研究目的 2
第二章 理論基礎與文獻回顧 3
2.1超導體的發展史與超導體的基礎理論 3
2.1.1超導體的發展史 3
2.1.2超導體的原理與特性[5] 6
2.2 Sm-Ba-Cu-O高溫超導體 11
2.2.1 RE-Ba-Cu-O結晶結構 11
2.2.2 RE-Ba-Cu-O相圖 12
2.3熔融製程(Melt Texture Growth) 13
2.3.1熔融製程基本原理 13
2.3.2 熔融製程的改良 14
2.3.3 RE123晶體成長模式[14] 15
2.3.4充氧退火 17
2.4提昇超導性能（TC、JC）的各種方式 17
2.4.1初始化學成份 17
2.4.2 添加物與211相的影響 19
第三章 實驗方法及步驟 31
3.1實驗材料 31
3.2實驗步驟 31
3.2.1粉末合成 31
3.2.2頂端接種熔融製程（ Top Seed Melt Texture） 32
3.2.3 充氧退火（Oxygenation Annealing） 32
3.2.4 性質分析 33
3.3儀器設備 34
第四章 結果與討論 42
4.1第一階段 42
4.1.1 X-Ray粉末繞射 42
4.1.2粉末熱差分析結果 42
4.1.3超導性能分析 47
4.1.4第一階段結果討論 47
4.2第二階段 55
4.2.1單晶粒成長結果 55
4.2.2 SEM觀察 55
4.2.3 EPMA結果觀察 67
4.2.4超導性能分析 67
4.2.5擄獲磁通密度掃瞄與磁浮力量測 69
4.2.6第二階段結果討論 87
4-3第三階段 89
第五章 結論 95
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