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研究生:鄭莉娟
研究生(外文):Li-Chuan Cheng
論文名稱:金屬及擴散障礙層與低介電SiOF,SiOFC和SiOFN之界面反應研究
論文名稱(外文):Interfacial reactions of metals and barrier layers on SiOF, SiOFN, and SiOFC films
指導教授:林文台
指導教授(外文):Wen-Tai Lin
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:99
中文關鍵詞:擴散障礙層擴散界面反應低介電
外文關鍵詞:Aldiffusiondiffusion barrierSiOFSiOFNSiOFCCu
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在本論文中主要研究金屬與擴散障礙層和SiOF、SiOFN、SiOFC在室溫下以及經由450℃快速退火的界面反應。首先,根據SIMS和ESCA縱深分析的結果,我們可發現SiOF中的F快速擴散通過Al在Al表面聚集生成Al2O3和AlF3,並且在Al/SiOF界面處也可觀察到少量的Al2O3和AlF3。另外在Al/SiOFN和Al/SiOFC的界面反應之中,在Al表面同樣有Al2O3和AlF3的生成,但是在Al/SiOFC的界面處只有微量的AlF3,而Al/SiOFN界面處則無發現AlF3,顯示SiOF中C和 N的摻雜可減少F擴散入Al膜。以TiN和Ta作為Al和SiOF、SiOFN、SiOFC的擴散障礙層,F仍然會擴散通過TiN和Ta膜並聚集在Al膜表面。
另一方面,在Cu/SiOF、Cu/SiOFN、Cu/SiOFC的界面反應中,顯示F、N、C的摻雜並未能阻擋Cu擴散入SiO2膜中。以TiN、Ta、W作為Cu和SiOF、SiOFN、SiOFC的擴散障礙層,Cu和F都會擴散進入TiN、Ta、W中,但F不會繼續擴散入Cu膜裡。相較於TiN,Cu和F擴散入Ta和W的量較少。SiOFN中的N可降低F擴散入W的量。
Pt/Ta/SiOF、Pt/Ta/SiOFN、Pt/Ta/SiOFC中的介面反應相似 。
F擴散入Ta中,但並不會擴散入Pt膜內。
The interaction of metals and barrier layers with SiOF, SiOFN and SiOFC films at room temperature and after 450℃ annealing were studied by using secondary ion mass spectroscopy (SIMS) and electron spectroscopy for chemical analysis (ESCA).For Al/SiOF samples F diffused readily through the Al film and accumulated at the Al surface to form Al2O3 and AlF3, meanwhile, some Al2O3 and AlF3 were also formed at the Al/SiOF interface. For Al/SiOFC and Al/SiOFN samples Al2O3 and AlF3 were formed at the Al surface, whereas the formation of AlF3 was pronouncedly suppressed, indicating that N and C doping can alleviate F diffusion into Al. For Al/TiN and Al/Ta layers on SiOF, SiOFN, and SiOFC films, the TiN and Ta barriers could not inhibit F diffusing through Al films and accumulating at the Al surface.
For Cu/SiOF, Cu/SiOFN, and Cu/SiOFC samples, the presence of F, N, and C could not suppress the penetration of Cu into SiO2 films. For Cu/TiN, Cu/Ta, and Cu/W layers on SiOF, SiOFN, and SiOFC films, both F and Cu diffused into the TiN, Ta, and W barriers with the extent of intermixing among F, Cu, and barriers being most severe for TiN, while F did not diffuse into the Cu layer. The doping of N into SiOF films could reduce the amount of F diffusing into W films.
For Pt/Ta on SiOF, SiOFN, and SiOFC films, F diffused into the Ta barrier layer, while it did not further diffuse into Pt.
中文摘要 I
英文摘要 II
致謝感言IV
目錄V
圖目錄IX

第一章 前言 1
1-1 發展背景 1
1-2 研究動機 4
1-3 論文結構 9

第二章 實驗基本步驟 10
2-1 液相沈積之基本沈積機制 10
2-2 液相沈積之實驗步驟 13
2-2-1液相沈積飽和六氟矽酸(H2SiF6)溶液之配 置 13
2-2-2 液相沈積之晶圓潔淨步驟 13
2-2-3 液相沈積之沈積系統 16
2-2-4 液相沈積試片之製作程序 17
2-3 離子佈植 18
2-4 鍍膜 19
2-5 快速退火 20

第三章 製程系統及分析儀器 21
3-1 製程系統 21
3-1-1 離子佈植系統 21
3-1-1-1 離子佈植原理 21
3-1-1-2 離子佈植製程 22
3-1-1-2-1中央大學光電科學研究中心中電流離子佈植系統 23
3-1-1-2-2行政院國家奈米元件實驗室中電流離子佈植系統 23
3-1-2 電子槍蒸鍍系統 24
3-1-2-1 電子槍蒸鍍原理 24
3-1-2-1 蒸鍍系統 25
3-2 量測分析儀器 26
3-2-1傅立葉轉換紅外線光譜儀(FTIR) 26
3-2-2化學分析電子譜儀(ESCA) 28
3-2-3 二次離子質譜儀(SIMS)30

第四章 結果與討論 33
4-1 SiOF、SiOFN、SiOFC之FTIR頻譜特性分析 33
4-1-1 SiOF 33
4-1-2 SiOFN 33
4-1-3 SiOFC 34
4-2 離子佈植對介電常數的影響 34
4-2-1 氮離子佈植 35
4-2-2 碳佈植佈植 35
4-3 金屬及擴散障礙層與SiOF、SiOFN、SiOFC之界面反應 35
4-3-1 Al 35
4-3-1-1 Al/SiOF 35
4-3-1-2 Al/SiOFN 36
4-3-1-3 Al/SiOFC 37
4-3-2 Al/TiN 39
4-3-2-1 Al/TiN/SiOF 39
4-3-2-2 Al/TiN/SiOFN 39
4-3-2-3 Al/TiN/SiOFC 40
4-3-3 Al/Ta 41
4-3-3-1 Al/Ta/SiOF 41
4-3-3-2 Al/Ta/SiOFN 42
4-3-3-3 Al/Ta/SiOFC 42
4-3-4 Cu 43
4-3-4-1 Cu/SiOF 43
4-3-4-2 Cu/SiOFN 44
4-3-4-3 Cu/SiOFC 44
4-3-5 Cu/TiN 44
4-3-5-1 Cu/TiN/SiOF 44
4-3-5-2 Cu/TiN/SiOFN 45
4-3-5-3 Cu/TiN/SiOFC 45
4-3-6 Cu/Ta 45
4-3-6-1 Cu/Ta/SiOF 45
4-3-6-2 Cu/Ta/SiOFN 46
4-3-6-3Cu/Ta/SiOFC 47
4-3-7 Cu/W 48
4-3-7-1 Cu/W/SiOF 48
4-3-7-2 Cu/W/SiOFN 48
4-3-7-3 Cu/W/SiOFC 49
4-3-8 Pt/Ta 50
4-3-8-1 Pt/Ta/SiOF 50
4-3-8-2 Pt/Ta/SiOFN 50
4-3-8-3 Pt/Ta/SiOFC 50
第五章 結論 52
5-1 Al 52
5-2 Cu 53
5-3 Pt/Ta 53

第六章 參考文獻 54
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