跳到主要內容

臺灣博碩士論文加值系統

(107.21.85.250) 您好!臺灣時間:2022/01/18 09:02
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:徐子軒
研究生(外文):Tzu-Hsuan Hsu
論文名稱:以電感耦合電漿蝕刻氮化鋁鎵調變摻雜場效電晶體的製作與研究
論文名稱(外文):Investigation and Fabrication of AlGaN/GaN MODFET by ICP System
指導教授:蘇炎坤蘇炎坤引用關係張守進張守進引用關係
指導教授(外文):Yan-Kuin SuShoou-Jinn Chang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:80
中文關鍵詞:調變摻雜場效電晶體氮化鋁鎵電感耦合電漿蝕刻
外文關鍵詞:MODFETAlGaNICP
相關次數:
  • 被引用被引用:0
  • 點閱點閱:709
  • 評分評分:
  • 下載下載:210
  • 收藏至我的研究室書目清單書目收藏:5
摘要

本論文中,我們利用三氯化硼和氯氣混和氣體以電感耦合電漿蝕刻對氮化鋁鎵做蝕刻特性探討,發現當三氯化硼和氯氣混和氣體的比率幾乎相等時得到最大蝕刻速率為600nm/min和最佳的表面粗糙度RMS 4.5nm。而且蝕刻表面經過回火後表面粗糙度大幅改善。此外,我們成功的製作出氮化鋁鎵調變摻雜場效電晶體,並分析其直流和高頻特性。在直流方面,我們得到元件最高轉導為110mS/mm,最高飽和電流為480mA/mm及4伏特的工作平台。在高頻部分我們以8510網路分析儀得到2.5GHz的截止頻率及5.3GHz的最大共振頻率。此外,我們利用嵌入埋藏鎂摻雜氮化鎵和氮化鋁鎵超晶格來做絕緣層以降低漏電流的發生及得到較低的膝電壓1V。
另外,我們利用突波電流-電壓量測證明以藍寶石為基板成長的氮化鋁鎵電晶體存在自我熱效應會造成元件的退化,使得在高汲極電壓時,汲極電流反而降低。當電壓的突波時間增加時發現電晶體特性有退化的趨勢。另外我們也做了一組變溫的量測,發現隨著溫度升高,轉導值和飽和電流都會因為高溫造成雜質散射效應而降低。不過當溫度達300oC時仍保有很好的電晶體特性且轉導值仍有40mS/mm,證明這材料適於高溫、高功率的應用。
Abstract

In this thesis, we etch AlGaN bulk materials by ICP system to investigate the properties on BCl3 and Cl2 reactive mixtures. We obtain the maximum etch rate (600nm/min) and best surface roughness RMS (4.5nm) only when the BCl3 and Cl2 ratio is equal. And annealing can highly improve the surface roughness. In addition, we had successfully fabricated the DC and RF AlGaN/GaN(MODFET). At DC section, the maximal transconductance (Gm) is 110mS/mm, saturation current reach 500mA/mm and gate-voltage-swing is 4V, it mean the device can operate at wide range. At RF section, we obtain cut-off frequency fT =2.5G and the maximum oscillation frequency fmax is 5.3G by HP 8510C network analyzer. Besides, We make use of embedding a unactived Mg-doped GaN and AlGaN superlattice to be the insulating layers, which can decrease the leakage current, and get lower knee voltage.
In addition, we use pulse I-V to prove the self-heating effect on the AlGaN/GaN (MODFET). When we increase the pulse period would result in the current degradation. We measure I-V curve at different temperatures and found the transconductance and saturation current also decrease with the increase of temperatures. However, the device can still normal operate at 300oC with transconductance (40mS/mm). It prove that this material can endure high temperature and highly enhance it’s applications on high temperature and high power.
Contents
Abstract (Chinese) I
Abstract (English) III
Contents V
Figure Captions VII
Chapter 1 Introduction
1.1 The background research on GaN 1
1.2 Organization 3
Chapter 2 Theory and Measurement Techniques
2.1 Circular transmission line model (CTLM)
model measurement 7
2.2 Photoluminescence (PL) measurement 9
2.3 Inductively coupled plasma reactive
ion etching (ICP-RIE) 9
2.4 SIMS (Secondary Ion Mass Spectroscopy) 10
2.5 AFM (Atomic Force Microscope) 11
Chapter 3 Inductively coupled plasma on AlGaN
3.1 Introduction 18
3.2 experiment arrangement 19
3.3 Result and discussion 19
3.4 Conclusion 21
Chapter 4 Fabrication and characteristic of AlGaN/GaN HEMT
4.1 Introduction 33
4.2 Epitaxy growth 34
4.3 Fabrication processes 34
4.4 The investigation of 2-DEG by
specialization measurement 36
4.5 Device structure 39
4.5 Characterization and discussion 43
4.6 The RF characteristic of AlGaN/GaN MODFET 44
Chapter 5 Thermal effect investigation
5.1 Introduction 66
5.2 experiment result and discussion 67
5.3 Conclusion 68
Chapter 6 Conclusions and Future Work
6.1 Conclusions 79
6.2 Future works 80
Reference 1
[1].T.Lei,T.D.Moustakas,R.J.Graham,Y.He,and .J.Berkowitz,Jappl.Phys.71(1992)4993
[2].P.C.Joh,J.J.Alwan and J.G. Eden,Thin SolidFilm,218,75(1992)
[3].T.Sasaki and T.Matsuoka,J.Appl.Phys.64,4531(1988)
[4].P,J.Born and D.S.Robertson,J.Mater.Sci.15,3003(1980)
[5].T. Detchprohm, Hamano, K. Hiramatsu, and I. Akasaki, J.Crust.Growth, 128, 384 (1993)
[6].R.C.Powell,G.A.Tomasch,Y.W.Kim,J.A.Thornton,andJ.E.Greene, Mater. Res. Soc. Symp. Proc.162, 525(1990)
[7]. T. Detchprohm, K.Hiramatsu, N.Sawaki, and I. Akasaki, J. Crust.Growth, 137,170(1994)
[8].S.Nakamura and G. Fasol, ”The Blue Laser Diode”,pp.7~16,1997
[9].A. Bykhovski, B. Gelmont, and M.Shur,J.Appl. Phys. 74,6734(1993)
[10].P. Kozodoy, M. Hansen,S.P.DenBaars,and U.K.Mishra,Appl. Phys. Lett.74,3681(1999)
[11].M.A.Khan,Q.Chen,M.S.shur,B.t. Dermott,J.A.Higgins,J. Burm,W. Schaff, and L.F. Eastman,Electron. Lett.32, 357(1996)
Reference 2
[1]. Gregory S. Marlow, Mukunda B. Das, “The effects of contact size and non-zero resistance on the determination of speeific contact resistance. “Solid State Electronics, Vol. 25, No. 2, P. 91~94, 1982.
[2]. R.K. Willardson and A,C, Beer, Semiconductors and Semimetals, Vol. 7,pp. 175-183 . Academic Press, Ner York (1971).
[3]. V. Ya. Niskov and G. A. Kuberskii, Resistance of ohmic contacts between metal and semiconductor films. Sov. Phys. Semicond. 4, 1553 (1971).
[4].W.G. Bickley, Bessel Functions, pp. 220-255. University Press, Cambridge (1960).
[5]. S. S. Cohen and G. Sh. Gildenblat, VLSI Electronics, 13, Metal-Semiconductor Contacts and Devices, Academic Press, Orlando, FL, 1986, 115.
[6]. M. Ahmad and B.M. Arora, “Investigation of AuGeNi Contacts Using Rectangular and Circular Transmission Line Model, “Silid-State Electron. 35, 1441-1445, Oct. 1992.
[7]. I. Adessida, A. Mahajan, E. Andideh, M. A. Kahn, D. T. Olson, and J.N. Kuznia, Appl. Phys. Lett. 63,2777(1993)
[8]. S. J. Pearton, C. R. Abernathy, F. Ren, J.R.Lothian,J. Vac. Sci. Technol.A 11,1772(1993).
[9]. R.J. Shul, G.B. McClellan, S.A. Casalnuovo, D.J. Rieger, Appl. Phys. Lett.69, 1119 (1996)
Reference 3
[1]. J. I. Pankore,J. Electrochem,Soc,119(1972) 1110.
[2]. S. T. Pearton and C.R. Abernathy, Appl. Phys. Lett, 64(1994) 2294
[3]. M. E. Lin, Appl. Phys, Lett,64(1994)887
[4].I.Adesida,A. Mahajan, and E. Andideh, Appl. Phys.Lett,63(1993)2777
[5].Y. H. Lee, H. S. Kim, G. Y. Yeom, J. W. Lee, W. C. Yoo, T. I. kim, Journal of Vacuum Science Technology A, vol.16, no.3, pp.1478-1482, 1998
[6].R. J. Shul, R. P. Schneider, Jr. and C. Constantine, Electronics Letters, vol.30,no.10,pp.817-819,1994
Reference 4
[1].M. A. K han, Q. Chen, M. S. Shur, B. T.McDermott,J. A. Higgins, J.Burm, W. J. Schaff, and L. F. Eastman, IEEE Electron dDevice Lett.17,584(1996)
[2].A. Ozgur, W. Kim, Z. Fan, A. Botchkarev, A Salvador, S. N. Mohammad, B. Sverdlov, and H.Morkoc,Electron.Lett.31,1389(1995)
[3].W. Q. Chen and S. K.Hark,J.Appl.Phys.77,5747(1995)
[4].A.Bykhovski,B.L.Gelmont,andM. S. shur, J.Appl.Phys.91,6332(1997)
[5].國立成功大學碩士論文Epitaxy of GaN by MOCVD and Fabrication of AlGaN/GaN MODFET by Chang-Yi Yang and Yan-Kuin Su
Reference 5
[1].T. P. chow and R. Tyagi, IEEE Trans.Electron Devices 41, 1481(1994)
[2].H.Morkoc, S. Strites, G. B. Gao. M.E. Lin, B. Sverdlov, and M. Burns,J. Appl.Phys, 76, 1363(1994)
[3].S. C. Binari, B. L. Rowland, W. Kruppa, G.. Kelner, K. Doverspike, and D. K. Gaskill, Electron. Lett.30, 1248(1994)
[4].O.Akutas, Z. F. Fan,S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, Appl. Phys. Lett.69,3872(1996)
連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關論文