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研究生:李士勤
研究生(外文):Shih-Chin Lee
論文名稱:矽鍺多層高平面通道摻雜P型場效電晶體
論文名稱(外文):Multi-Delta-Doped SiGe Channel p-MESFET
指導教授:吳三連吳三連引用關係張守進張守進引用關係
指導教授(外文):San-Lein WuShoou-Jinn Chang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:83
中文關鍵詞:通道摻雜場效電晶體矽鍺
外文關鍵詞:SiGeChannel-DopedFET
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  • 被引用被引用:0
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摘要
本論文中,我們利用低溫( 550℃)固體源分子束磊晶法(Solid Source Molecular Beam Epitaxy),成長一系列矽鍺多層高平面通道摻雜P型場效電晶體(Multi-Delta-Doped SiGe Channel p-MESFET)結構,並針對各種結構進行元件製作以及能帶工程理論模擬分析。
我們使用MEDICI二維模擬軟體,模擬不同元件結構的能帶圖與電洞載子分佈圖。在實驗製作方面,我們成功研製出一系列矽鍺多層高平面通道摻雜P型場效電晶體(Multi-Delta-Doped SiGe Channel p-MESFET)。由於結構之優越性,三通道高平面對稱式摻雜場效電晶體(Symmetrical TDFET )具有最高的互導值(17.3 mS/mm),較大的汲極驅動電流(57 mA/mm),以及較寬的閘極工作平台(4V),顯示此結構具有優越之載子侷限能力。此外由於未摻雜層存在於通道與閘極間,因此元件具有高順向開啟電壓(Turn-on Voltage)和反向崩潰電壓(Reverse Breakdown Voltage)。
Abstract
In this thesis, we cooperated with Research Center for Advanced Science and Technology (RCAST), the University of Tokyo. A series of Multi-Delta-Doped SiGe Channel p-MESFET were grown by Solid-Source Molecular Beam Epitaxy (SSMBE) at low temperature (550℃). Delta doping was obtained by evaporating boron from a pure B source in a resistance heated Knudsen cell with the Si and Ge shutters closed.
We adopt 2D MEDICI tool to simulate the energy band diagram and hole concentration distribution. With the results of device simulation, we could obtain a better understanding of device behaviors. A series of Doped SiGe Channel p-MESFETs, including UFET, SDFET, DDFET, and TDFET, were sucessfully fabricated. From the experimental results, Symmetrical TDFET device demonstrates the best DC performances among all structures. The peak gm was 17.3 mS/mm. The maximum value of drain to source saturation current is about 57 mA/mm. A broad linear gm region versus input bias swing was 4 V.
Abstract (Chinese) i
Abstract (English) ii
Acknowledgements iii
Contents iv
Table Captions vi
Figure Captions vii

Chapter 1 Introduction
1.1 Motivations 1
1.2 Organization 4
References 5
Chapter 2 Characteristics of Si1-xGex Heterostructures 9
2.1 The comparisons of distinct doped profile SiGe structures 9
2.2 Properties of Si/Si1-xGex Epitaxial Layer 10
2.3 Band Diagram of Sil-XGeX 11
2.3.1 Bandgap 11
2.3.2 Band alignment 12
2.4 Transport Properties of Strained Si1-xGex 13
2.5 The Growth Techniques of SiGe Strained Layers 14
References 33
Chapter 3 Fabrication of Multi-Delta-Doped SiGe Channel p-MESFET 35
3.1 Mesa Isolation 36
3.2 Ohmic Contact 37
3.3 Schottky Contact 39
Chapter 4 Characteristics of P-type SiGe-based Channel-Doped Field Effect Transistors 44
4-1 Gate-Source Schottky Diode Characteristics 44
4-2 Band Diagram and Hole Distribution of P-type SiGe-based Channel-Doped Heterostructure 46
4-3 The Experimental of P-type SiGe-based Channel-Doped Field Effect Transistors 47
References 74
Chapter 5 Conclusions 76
Chapter 6 Future Study 81
References 83
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