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研究生:徐建榆
研究生(外文):Jian-Yu Xu
論文名稱:射頻積體電路之電感及相關被動元件之研製
論文名稱(外文):Study of On-chip Inductor and Related Passive Devices for CMOS RFIC Application
指導教授:陳良波張守進張守進引用關係
指導教授(外文):Liang-Po ChenShoou-Jinn Chang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:110
中文關鍵詞:平衡非平衡器射頻電感變壓器
外文關鍵詞:transformerinductorbalunRF
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在此論文中,我們用電磁模擬工具,Ensemble,模擬電感、變壓器、和平衡非平衡器的特性。所有的電感和變壓器均製作在具有六層金屬層的標準矽製程裡。要得到正確的模擬結果,得先校正製程參數,包括金屬導電度、金屬厚度、頂層金屬和基底之間的氧化層厚度、和基底導電度。使用已量測過的電感來校正製程參數的原因是因為電感的特性會受到矽基底損失的影響。並且,模擬一個變壓器所需的時間比模擬一個電感長很多。校正製程參數之前,先使用模擬的電感來觀察在製程變動範圍內的製程參數對電感特性的影響。比較兩個電感的量測與模擬結果,顯示我們已初步地校正製程參數。之後量測與模擬七個交錯式變壓器以便進一步確認製程參數是否校正正確。同時,也分析圈數和內徑對變壓器特性的影響。對於這七個變壓器,模擬結果也與量測結果相吻合。這表示製程參數確實校正正確。最後,利用校正的製程參數,設計與模擬兩種不同結構的平衡非平衡器。並且,對模擬結果做分析與討論。
In this thesis, the characteristics of on-chip inductors, transformers, and baluns are simulated using the electromagnetic simulation tool, Ensemble. All of inductors and transformers are fabricated in the standard silicon process with six metal layers. The simulated results are accurate only when process parameters used in Ensemble, such as the metal conductivity, metal thickness, oxide thickness between the top metal and the substrate, and substrate conductivity, are well calibrated. Employing measured inductors to calibrate process parameters is due to the fact that the performance of the inductor is significantly affected by the silicon substrate loss. Moreover, simulating one transformer consumes much more time than simulating one inductor. Before the calibration of process parameters, effects of process parameters on the inductor performance within the process variation are observed by using one simulated inductor. Comparisons between measured and simulated results of two inductors show that process parameters are well calibrated. Seven interleaved transformers are measured and simulated to further verify whether process parameters are well calibrated or not. At the same time, effects of the number of turn and the inner diameter on the transformer performance are analyzed. For these seven transformers, simulation results well agree with measurement results as well. It means that process parameters are well calibrated for certain. Finally, two different structures of baluns can be designed and simulated accurately using well-calibrated process parameters. Also, simulated results of baluns are analyzed and discussed.
Chinese Abstract………………………………………………………………4
English Abstract………………………………………………………………6
Acknowledgement………………………………………………………….....8
Contents……………………………………………………………………….9
List of Tables………………………………………………………………...11
List of Figures……………………………………………………………….12

Chapter 1 Introduction…………………………………………………....18
1-1 Background……………………………………………..18
1-2 Organization…………………………………………….19
Chapter 2 Calibration of Process Parameters by Inductor Characterization……………………………………………...21
2-1 Introduction………………………………………….….21
2-2 Loss Mechanisms of Inductor……………………….….22
2-2.1 Metal Loss……………………………………..22
2-2.2 Substrate Loss……………………………….…24
2-3 Definitions of Inductor Parameters..……………….…...25
2-4 Simulation Method……………………………………..26
2-5 Simulation Procedures………………..……………..….27
2-6 Effects of Process Parameters on Inductor Performance…………………………………...……….29
2-6.1 Metal Conductivity……………………...……..30
2-6.2 Metal Thickness………………………...……...30
2-6.3 Oxide Thickness………………………...……...31
2-6.4 Substrate Conductivity…………………...…….31
2-6.5 Summary………………………………...……..32
2-7 Results and Discussions…………………………...……32
Chapter 3 Measurement and Simulation of Transformer……………...….34
3-1 Introduction………………………………………...…...34
3-2 Basic Principle.…………………………………...….....34
3-3 Device Structure………..………………………...……..37
3-4 Measurement and Simulation Methods….………...…....38
3-5 Definitions………………………………………...…….40
3-6 Effects of Number of Turn and Inner Diameter on Transformer Performance………….………………......41
3-7 Comparisons between Measurement and Simulation Results…………….……………………………..……..43
Chapter 4 Application for the Balun Design………………………...……45
4-1 Introduction………………………………………...…...45
4-2 Basic Principle.…………………………………...…….45
4-3 Device Structures….……………………………...…….47
4-4 Results and Discussions………………………...………48
Chapter 5 Conclusions………………………………………...………….50
References……………...………………………………………...…………52
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