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研究生:張正男
研究生(外文):Cheng-Nan Chang
論文名稱:快速升溫化學氣相沈積成長矽基三元材料(SiCN)薄膜及其應用於光電元件的研究
論文名稱(外文):RTCVD Prepared SiCN Thin Films for Optoelectronic Devices Application
指導教授:方炎坤方炎坤引用關係
指導教授(外文):Yean-Kuen Fang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:26
中文關鍵詞:矽碳氮材料
外文關鍵詞:SiCN
相關次數:
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快速升溫化學氣相沉積成長矽基三元材料(SiCN)薄膜
及其應用於光電元件的研究
張正男* 方炎坤**
國立成功大學
電機系微電子工程研究所
摘 要
本論文報導利用快速升溫化學氣相沈積系統(RTCVD),及使用三種不同氣體【Propane C3H8】、【Ethylene C2H4】、【MethySilane SiH3CH3】作為C原子的來源,成長SiCN薄膜,並以此薄膜作為基礎,製作出可發短波長光的光電元件。由實驗結果得知,金屬Ni、Au可與SiCN薄膜形成良好的歐姆接觸,而IZO可與SiCN成為蕭特基接觸。藉由歐姆接觸和蕭特基接觸,製作出n-SiCN/p-Si異質接面二極體和IZO/n-SiCN蕭特基二極體,此兩種二極體皆能發出短波長的紫色光。但經PL的量測結果發現SiCN薄膜應發紫外光,這樣的結果吾人認為可能是因缺陷的存在所致。由發光的現象顯示,SiCN材料在短波長光源的應用上應是潛力無窮。
*作者 **指導教授
RTCVD Prepared SiCN Thin Films for
Optoelectronic Devices Application
Cheng-Nan Chang* Y. K. Fang**
Institute of Microelectronics, Department of Electrical Engineering,
National Cheng Kung University, Tainan, Taiwan, R.O.C.
ABSTRACT
Silicon carbon nitride (SiCN) has been a material of interest for many researchers owing to its many interesting physical characteristics and wide area of possible applications. However, there are few reports about the electro-luminescence phenomenon of this ternary-compound material.
This thesis reports the electrical properties and optoelectronic devices applications of heteroepitaxial SiCN films. The SiCN films were prepared on crystal silicon substrate by rapid-thermal chemical vapor deposition (RTCVD) system. The ohmic and Schottky contacts to the deposited SiCN films are discussed firstly, then based on the results of metal contacts to the SiCN films, two blue-violet light emitting devices, n-SiCN/p-Si heterojunction diode and Indium-Zinc-Oxide (IZO)/n-SiCN Schottky diode, are developed.
The performances of two blue-violet light emitting devices are examined by I-V characteristic, electro luminescence (EL) photograph and photo luminescence (PL) spectra. From the PL measurement, the SiCN film has a direct band gap of about 3.77eV. But in the EL photograph, the emitting light is blue-violet color, which may be caused by defect emission. These optical results indicate the potential of SiCN for advanced blue and ultra-violet (UV) optoelectronic devices applications.
*Author **Advisor
目錄
中文摘要
英文摘要
附圖表目錄
第一章 前言………………………………………………………………1
第二章 SiCN的成長與蝕刻系統…………………………………………5
2-1 SiCN薄膜之成長系統………………………………………5
2-1-1 快速升溫化學氣相沈積系統…………………………5
2-1-2 矽基板之清洗…………………………………………6
2-2 蝕刻系統……………………………………………………6
第三章 SiCN薄膜的成長方法及特性分析……………………………8
3-1 成長方法……………………………………………………8
3-2 TEM特性分析………………………………………………8
3-3 AES特性分析……………………………………………10
3-4 SEM特性分析……………………………………………11
3-5 電性分析…………………………………………………12
第四章 SiCN薄膜的金半接觸理論與實驗結果………………………14
4-1 金半接觸的製作流程……………………………………14
4-2 SiCN薄膜的歐姆接觸……………………………………14
4-3 TLM(Transfer Length Method)法………………………15
4-4 量測結果…………………………………………………17
4-5 SiCN薄膜的蕭特基接觸…………………………………18
第五章 SiCN薄膜的光電特性研究…………………………………19
5-1 元件結構與製作流程……………………………………19
5-2 n-SiCN/p-Si異質接面二極體的發光特性………………19
5-3 IZO/n-SiCN蕭特基二極體的發光特性…………………21
第六章 結論與展望……………………………………………………24
6-1 結論………………………………………………………24
6-2 展望………………………………………………………26
※參考文獻
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