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研究生:黃東海
研究生(外文):Dong-Hai Huang
論文名稱:以MOCVD成長磷化銦鎵/砷化鎵漸變式摻雜之異質雙載子電晶體
論文名稱(外文):InGaP/GaAs Graded-Base Heterojunction Bipolar Transistor Grown by Metalorganic Chemical Vapor Deposition
指導教授:許渭州
指導教授(外文):Wei-Chou Hsu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:77
中文關鍵詞:基極磷化銦鎵漸變式異質雙載子電晶體
外文關鍵詞:baseInGaPgradedHBT
相關次數:
  • 被引用被引用:0
  • 點閱點閱:343
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  • 下載下載:95
  • 收藏至我的研究室書目清單書目收藏:0
在本文中,我們利用低壓有機金屬化學氣象沈積法,成長以磷化銦鎵/砷化鎵(InGaP/GaAs)系統之漸變式(Graded)摻雜基極之異質雙載子電晶體,另加上陡變式基極並調變長度比較並討論其特性變化。實驗結果顯示電流增益於不同程度漸變摻雜下可由63.5提升至69.6及74.7,而縮短基極長度由1000Å至800Å則可使增益提升至82。溫度變化方面以漸變基極結構較明顯,具有短基極之原件增異變化在室溫變化下較均勻摻雜基極更不敏感。高頻特性方面,fT 經由漸變基極效果最多可由17.7GHz提升至21.8GHz,fmax可由7.0GHz提升至9GHz。此變化主因為漸變式基極之內建電場加速載子通過基極造成較短基極傳輸時間。
In this thesis, we farbricated InGaP/GaAs graded-base heterojunction bipolar transistors by MOCVD system. For comparison, we fabricated and discussed uniformly-doped HBTs with different base width. Experimental results show that the common-emitter current gain was improved from 63.5 to 74.7 by using graded base structure. Meanwhile, the current gain improved from 63.5 to 82 when abrupt base width decreased from 1000Å to 800Å was applied. Less sensitivity in DC current gain vibration by increasing temperature was observed in the graded structure when compared to that of non-graded base structure. In RF performance, the high frequency improvement caused by using graded base was fT from 17.7GHz to 21.8GHz and fmax increased from 7.0GHz to 9GHz. This improvement is mainly resulted from the build-in electrical field caused by the graded-doping profiles (shorter base-transient time).
Abstract (Chinese) 1
Abstract (English) 2
Chapter 1 Introduction 3
Chapter 2 LP-MOCVD System 6
2-1 System Introduction 6
2-1-1 Gas Handling System 7
2-1-2 Bypass Pipe Line 8
2-1-3 Reaction Chamber and Heating System 8
2-1-4 Automatic Pressure Control (APC) System 9
2-1-5 Gas Exhaust System 10
2-2 Epitaxy Growth Techniques 10
Chapter 3 Device Structure and Fabrication Process 13
3-1 Graded Base Analysis 13
3-2 Devices structure 14
3-3 Devices Fabrication Process 15
3-3-1 Emitter Metallization 15
3-3-2 Emitter Mesa 15
3-3-3 Base Metallization 16
3-3-4 Base Mesa 16
3-3-5 Collector Metallization 16
3-3-6 Collector Mesa 17
3-3-7 RF Process 17
Chapter 4 Experimental results and Discussion 19
4-1 The E-B and B-C Junction 19
4-2 DC Characteristics 21
4-3 Temperature Dependence 23
4-4 RF Performance 25
Chapter 5 Conclusion 27
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