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研究生:林瑞宗
研究生(外文):Ruei-Jsung Lin
論文名稱:微量添加劑對Ba(Mg1/3Ta2/3)O3陶瓷燒結與微波介電特性之影響
論文名稱(外文):Study of Additive Effects on Sintering and Microwave Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Ceramics
指導教授:黃正亮
指導教授(外文):Cheng-Liang Huang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程學系碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:104
中文關鍵詞:燒結陶瓷微波介電
外文關鍵詞:ceramicsinteringmicrowave dielectric
相關次數:
  • 被引用被引用:6
  • 點閱點閱:258
  • 評分評分:
  • 下載下載:65
  • 收藏至我的研究室書目清單書目收藏:1
在本論文中,利用微量添加(0.25wt%~1wt%)的CuO和WO3的微量添加,來觀察對燒結及微波特性的影響。結果顯示,微量添加CuO和WO3,確實對BMT陶瓷的燒結和微波特性有明顯的影響。而添加CuO,從X-Ray上並沒有發現二次相的存在;但是相反的,而添加WO3的結果,從X-Ray就發現了二次相。添加CuO 0.5wt%燒的結溫度與持溫時間分別為1470 OC和4hr時,BMT材料的εr為24.2,Q x f值為173000,τf為1.5ppm/OC,理論密度為95%;而添加WO3 0.5wt%時,燒結溫度與持溫時間分別為1370 OC和4hr時,εr為24,Q x f值為148320,τf為1ppm/OC,理論密度為95%。
在本論文的另外一個部分是利用同軸型共振器,實現交錯耦合濾波器,使其頻率響應的波形擁有優良的止帶響應,在實驗上,藉著相互接觸的面來進行耦合,而共振器的頻率,相互之間的耦合係數,還有external Q 在設計時都必須精確的考量,最後再把四級組合起來,形成交錯耦合濾波器。結果顯示,濾波器表現出好的止帶響應和低的插入損。
The effect of CuO and WO3 addition on the microstructures and the microwave dielectric properties of barium magnesium tantalate Ba(Mg1/3Ta2/3)O3 ceramics has been investigated. It is found that low level-doping of CuO and WO3 (up to 1 wt%) can significantly improve their sintering and microwave dielectric properties. The second phase was not observed for ceramics with 0.25 to 1 wt% CuO additions. Respectively, the second phase was observed for ceramics with 0.25 to1 wt% WO3 additions. The nonloaded quality factors Q and sintering temperature were effectively promoted by CuO and WO3 addition. The value of 24.2 and 24, Q×f value of 173000 and 148000 (at 10 GHz) and value of 1.5 and 1 ppm/oC were obtained for Ba(Mg1/3Ta2/3)O3 ceramics with 0.5 wt% CuO addition sintered at 1470oC for 4 h, and 0.5 wt% WO3 addition sintered at 1370oC for 4 h.
On the other hand , this paper use cross-coupled mechanism to design a coaxial microwave filter which has better performance. The coupling of the electromagnetic energy is designed with a concept that is coupled to each other through apertures which were formed on the out side of the resonators. The resonator frequency of each resonator, coupling coefficients between adjacent resonators, and the external Q at both ends were adjusted before assembly. Finally, the microwave filter using corss-coupled has good performance in stop band and insertion loss.
第一章 序論 ….…………1
第二章 原理 ...……3
2-1 介電原理 …………3
2-2 介電共振器原理 …..………..7
2-2-1馬克斯威爾方程式之推導 ……..……….9
2-3 結晶及燒結理論 .…...12
2-3-1 再結晶與晶粒成長 ..………….12
2-3-2 燒結理論和液相燒結 ….…………13
第三章 微波濾波器電路原理 ...16
3-1 微波濾波器種類的簡介 ..16
3-2 共振器耦合形式 ……………17
3-2-1 簡介 …………..17
3-2-2 共振器間的耦合形式 …………..18
3-3 交錯耦合器相關理論 ……..24
3-3-1 簡介 …………..24
3-3-2 交錯耦合濾波器的理論與特色 …………26
第四章 實驗過程與方法 ………...29
4-1 介電材料及圓柱型介電共振器之製備 29
4-2 特性分析與量測 …….....30
4-2-1 X-Ray分析(XRD) ………30
4-2-2 掃瞄式電子顯微鏡(SEM)分析 …….…31
4-2-3 密度之量測 ………...31
4-2-4 微波特性的量測 …….32
4-3 λ/4同軸型介電濾波器之製備 …39
4-4 交錯耦合濾波器之設計 ….40
4-4-1耦合係數及等效電路 ……..40
4-4-2實驗過程 ………42
第五章 實驗結果與討論 ..43
5-1 BMT添加CuO ………43
5-1-1 BMT 摻雜CuO之X-Ray繞射分析 …….43
5-1-2 BMT 摻雜CuO之SEM …….43
5-1-3 BMT 摻雜CuO之理論密度 …….44
5-1-4 BMT 摻雜CuO之介電常數 ……….44
5-1-5 BMT 摻雜CuO之品質因素與中心頻率乘積 .45
5-1-6 BMT 摻雜CuO之溫度頻率飄移係數 …45
5-2 BMT 添加WO3 …….46
5-2-1 BMT 摻雜WO3之X-Ray繞射分析 ……..46
5-2-2 BMT 摻雜WO3之SEM ……….47
5-2-3 BMT 摻雜WO3之理論密度 ……….47
5-2-4 BMT 摻雜WO3之介電常數 …………48
5-2-5 BMT 摻雜WO3之品質因素與中心頻率乘積 ..48
5-2-6 BMT 摻雜WO3之溫度頻率飄移係數 ….49
5-2-7 BMT 摻雜WO3之EDS ……..49
5-3 交錯耦合濾波器 ………50
5-3-1 利用混合、磁場、電場耦合之交錯耦合濾波器 50
5-3-2 利用磁場耦合之交錯耦合濾波器 …50
第六章 結論 ……….52
6-1 CuO、WO3對Ba(Mg1/3Ta2/3)O3微波燒結特性探討 52
6-2 λ/4同軸型交錯耦合濾波器 ……..52
參考文獻 ……….55
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