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研究生:王周昇
研究生(外文):Chou-Sheng Wang
論文名稱:砷化鋁鎵/砷化銦鎵/砷化鎵與磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體在加速應力下退化機制之研究
論文名稱(外文):The Study of Degradation Mechanisms under Accelerated Stress in AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs PHEMTs
指導教授:王永和王永和引用關係洪茂峰洪茂峰引用關係
指導教授(外文):Yeong-Her WangMau-Phon Houng
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程學系碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:73
中文關鍵詞:假形高速電子移動電晶體
外文關鍵詞:Pseudomorphic High Electron Mobility Transistor
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近幾年來,由於低雜訊應用的優點磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體不斷地研究與發展。然而,對元件應用極為重要的應力施加特性的研究仍然是非常有限的。因此,在不同應力條件下磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體的可靠度是值得我們來研究的。
在本文中,我們深入地描述了在加速測試前後閘極尺寸0.25μm × 160μm的磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體的特性變化。例如在140分鐘VDS = 6V and VGS = 0V的熱電子應力施加後,汲極電流20%的退化和飽和區轉導值的驟降是由於通道電子濃度的下降及額外表面散射的增加。像這類劇烈的退化機制在我們的研究裡會有一詳細的討論。另外,我們也做了蕭特基能障特性的加速測試,這是由於它在雜訊特性上扮演著極為重要的角色。在320秒IG = -8mA (50mA/mm)的加速測試後,夾止電壓位移到更負的值而它的大小只增加了約2%,暗示著磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體有著優異和穩定的雜訊特性。除了磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體元件特性的研究外,我們也詳細地探討了在不同加速應力下砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體的可靠度。
最後,我們也發現了在不同的加速應力下磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體在應用上似乎較砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體更為穩定。
In recent years, InGaP/InGaAs/GaAs PHEMTs (Pseudomorphic High Electron Mobility Transistor) have been researched and developed continually due to its advantage of low noise application. However, the study of stressed devices characteristics is still very limited which is very important for device application. Consequently, it is worth of investigating the reliability of InGaP/InGaAs/GaAs PHEMTs under different stress conditions.
In this thesis, InGaP/InGaAs/GaAs PHEMTs with gate dimension of 0.25μm × 160μm have characterized in depth before and after accelerated testing. For example IDS degrades, after 140mins of hot-electron stress at VDS = 6V and VGS = 0V, approximately 20% accompanying with a significant decrease of Gm measured in the saturation region are due to both the channel charge density reduction and the additional surface scattering increasing. Such catastrophic degradation mechanisms will be discussed in detail in our work. In addition, the accelerated testing of the Schottky barrier characteristics is also examined due to it plays an very important role in noise performance. The pinch-off voltage shifts toward further negative values after 320sec of accelerated testing at IG = -8mA (50mA/mm), and the magnitude of the pinch-off voltage is only increased by 2%, which indicates that the InGaP/InGaAs/GaAs PHEMTs have excellent and stable noise performance. Excepting for the investigation of devices characteristics of InGaP/InGaAs/GaAs PHEMTs, we also probe particularly into the reliability of AlGaAs/InGaAs/GaAs PHEMTs under different accelerated stress.
Finally, it is found that InGaP/InGaAs/GaAs PHEMTs seem, after different accelerated stress, to be more reliable for device applications compared with AlGaAs/InGaAs/GaAs PHEMTs
English abstract i
Chinese abstract iii
List of Tables vii
List of Figures viii
Chapter 1 1
Chapter 2 Samples and Experimental 3
2.1 Introduction 3
2.2 Samples 3
2.2.1 The structure of the PHEMT’s 3
2.2.2 The Typical Process Flow for PHEMT’s 5
2.3 Experimental Setup 7
2.3.1 Introduction to Accelerated Tests 7
2.3.2 Measurement Equipments 8
2.3.3 Accelerated Tests of Samples 8
Chapter 3 Accelerated Testing of AlGaAs PHEMT’s Reliability 11
3.1 Introduction 11
3.2 The AlGaAs/InGaAs/GaAs PHEMT’s Structure 12
3.3 Hot Electron Tests of AlGaAs PHEMT’s 12
3.3.1 Degradation Due to Hot Electron and Impact Ionization 12
3.3.2 Gate-drain Breakdown Walkout 13
3.3.3 Existence of the Kink 14
3.3.4 An Increase of IDS in Saturation Region 14
3.3.5 A Bell-shaped Behavior of IG 15
3.3.6 A Further Discussion of the Schottky Junction 18
3.4 Temperature-dependent Characteristics of AlGaAs PHEMT’s 19
3.4.1 Thermal Effects of ID and Gm in Saturation Region 20
3.4.2 Disappearance of the Kink 20
3.4.3 Thermal Effects of Schottky Junction 21
3.5 Summary 22
Chapter 4 Accelerated Testing of InGaP-PHEMT’s Reliability 36
4.1 Introduction 36
4.2 The In0.49G0.51P/In0.15Ga0.85As/GaAs PHEMT’s Structure 37
4.3 Hot Electron Tests of InGaP PHEMT’s 37
4.3.1 Enhancement and Degradation of ID in Saturation Region 37
4.3.2 A bell-shaped Behavior of IG 38
4.3.3 A Comparison of the Schottky Barrier Characteristics 40
4.4 The Combined Tests of High Current Densities and High
Electrical Fields on Schottky Barrier 41
4.5 Temperature-dependent Characteristics of InGaP PHEMT’s………………..41
4.6 High Temperature Storage Test of InGaP PHEMT’s 43
4.7 Summary 44
Chapter 5 Conclusions and Future works 66
5.1 Conclusions 66
5.2 Future Works 67
Reference 68
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