|
參考文獻 [1] S. Mendis and etc.,“A 128×128 CMOS active pixel image sensor forhighly integrated image system”Tech Dig of IEEE International Electron Devices Meeting, pp. 583-586,1993 [2] S. Mendis et al.,“CMOS active pixel image sensor,”IEEE Trans. Electron Devices, vol. 41(3),pp.452-453,1994 [3] E. R. Fussum,“CMOS image sensor:electronic camera on a chip”Tech. Dig. of IEEE International Electron Devices Meeting , pp. 17-25,Dec. 1995 [4] R. H. Nixon et al.,“256×256 CMOS active pixel sensor Camera-on-a-chip,”IEEE Journal of Solid-state Circuit, vol. 31, no. 12,pp. 2046-2050, Dec.1996 [5] S. Mendis and etc.,“CMOS active pixel image sensor for highly integrated imaging system,”IEEE Journal of Solid-state Circuit, vol. 32, no. 2,pp. 187-197, Feb.1997 [6] Eric R. Fossum,“CMOS image sensors:electronic-on-chip”IEEE Transactions on Electron Devices, VOL. 44, NO. 10, Oct. 1997 [7] Robert F. Pierret “Semiconductor Device Fundamentals ”, Indiana , pp. 195-345,March 1996 [8] Eustace L. Dereniak, Devon G. Crowe,“Optical Radiation Detectors”, Arizona, pp. 63-85 [9] Donald A. Neamen,“Semiconductor Physics & Devices, Second Edition”,New York, pp. 377-441,1999 [10] S. M. Sze,“Modern Semiconductor Device Physics”,Canada,1997 [11] Phillip E. Allen Douglas R. Holberg,“CMOS Analog Circuit Design”,New York,pp. 590-596,1987 [12] 李嗣涔、管傑雄、孫台平合著,“半導體元件物理”,三民書局 [13] 陳瑞和著,“感測器”,全華圖書,pp. 9-24,1998 [14] S. M. Sze,“Semiconductor Sensor”, Wiley,New York,USA,1994 [15] David A.Johns Ken Martin,“Analog Integrated Circuit Design ”,New York, pp.221-303,1997 [16] Behzad Razavi,“Design of Analog CMOS Integrated Circuits”,California, pp.291-344,2001 [17] Kenneth C. Smith,“Microelectronic Circuit Fourth Edition”, New York,1998 [18] K. Tsukada, Y. Miyahara, Y. Shibata and H. Miyagi,“An integrated micro multi-Ion sensor using platinum-gate field-effect transistor, ”IEEE., TRANSDUCERS ’91,International Conference, San Francisco,U.S.A, pp. 218-221 , 1991 [19] T.C.W. Yeow ,M.R. Haskard, D. E. Mulcahy, H. I. Seo, D.H. Kwon,“ A very large integrated pH-ISFET sensor array chip compatible with standard CMOS process,” Sensors and Actuators B pp. 434-440 , 1997 [20] J. Bausells, J. Carrabina, A. Errachid, A. Merlos, “Ion-sensitive field-effect transistor fabricated in a commercial CMOS technology,” Sensor and Actuators B pp. 56-62,1999 [21] B. Palan, F.V. Santos, J. M. Karam,B. Courtois, M. Husak, New ISFET sensor interface circuit for biomedical applications, sensors and Actuators B pp. 56-62 , 1999 [22] Kuang Feng Sung, The design of a Veraiable gain instrumentation amplifier, Master thesis, R.O.C., Taiwan, June 1999. [23] Yuan-Lung Chin,“Study of Extended Gate Field Effect Transistor(EGFET) and Signal Processing IC Using CMOS Technology”,中原大學博士論文,2001 [24] R. Jacob Baker, Harry W. Li, David E. Boyce,“CMOS Circuit Design ,Layout and Simulation”,New York,1997 [25] Phillip E. Allen Douglas R. Holberg,“CMOS Analog Circuit Design ,Second Edition”,New York,pp. 492-611,2002
|