臺灣博碩士論文加值系統

積 體 單 石 型 感 測 器 及 前 級 電 路 設 計 之 研 究
研究生：林炳原 指導教授：孫台平 博士
中文摘要
在本論文中，我們係透過互補式金氧半(CMOS)標準製程來設計三種不同架構(N+_Psub、P+_Nwell、Nwell_Psub)之光電二極體，及各種不同射極面積的電晶體來當做溫度感測器，我們也分別地對二種感測器做了各種特性的量測，根據實驗結果顯示，我們可以得到最適合做感光元件的架構(N+_Psub)。而溫度感測器則依設計上成本的考量，與最佳化感測面積之選擇，最後我們選擇射極面積(5μm×5μm)的電晶體，可為最佳之感溫元件。
我們也設計了具備有低電壓、低雜訊等特性之運算放大器，並使用了T型電阻的架構來取代轉阻放大器中的迴授大電阻，因而大大地減少了電阻因佈局時所佔的面積，進而達到降低設計成本的目的。再者本論文中將感測元件及自製運算放大器電路實現於單一晶片上，完成一個最小感測光電流可小至1奈安(1nA)之光度計。
關鍵字：互補式金氧半(CMOS)標準製程、光電二極體、溫度感測器、雜訊、運算放大器、轉阻放大器、光度計

Study on the Monolithic Sensor and Front-End Circuit Design
Student: Ping-Yuan Lin Advisor: Tai-Ping Sun
ABSTRACT
In this thesis, we have used the CMOS standard process to design (N+_Psub、P+_Nwell、Nwell_Psub) three different type photodiode's structures. The five different emitter area's transistors for temperature sensors were fabricated by the CMOS standard process. We have also measured two kinds of sensor's properties respectively. After a series of experimental measurements, the best photodiode can be gotten. Considering the design cost and the optimum area, a good temperature sensor of the transistor which the area of emitter is 5μm×5μm.
However, the CMOS standard process of the UMC 0.5μm 2P2M was employed to fabricate a low voltage, low noise operational amplifier to combine with the photo-sensor. We have also used a small area T-type resistance to replace a large area feedback resistance of a transimpedance amplifier. In this study the lux meter measurement system which can detect the photo-current about 1nA in a single chip will be accomplished.
Keywords：CMOS standard process、photodiode、temperature sensor、noise、operational amplifier、transimpedance amplifier、lux meter

目 錄
中文摘要………………………………………………………………Ⅰ
英文摘要………………………………………………………………Ⅱ
誌謝……………………………………………………………………Ⅲ
目錄……………………………………………………………………Ⅳ
圖目錄…………………………………………………………………Ⅵ
表目錄…………………………………………………………………Ⅸ
第一章 緒論……………………………………………………………1
1-1研究背景……………………………………………………………1
1-2研究目的………………………………………………………2
1-3論文架構及研究方法…………………………………………3
第二章 CMOS感測器理論探討與分析…………………………………6
2-1光的基本特性………………………………………………………6
2-1.1光的種類 ……………………………………………………6
2-1.2光輻射的轉換 ………………………………………………7
2-1.3光的吸收 ……………………………………………………8
2-2 P-N Junction 的物理特性分析…………………………………10
2-3光二極體之工作原理………………………………………………14
2-3.1光電流的產生……………………………………………………14
2-3.2 雜訊 ……………………………………………………………17
2-4雙載子接面電晶體(BJT)構造及基本特性 ………………………20
2-5雙載子接面電晶體的VBE和溫度變化關係 ………………………23
第三章 CMOS標準製程感測器之製作…………………………………26
3-1 CMOS光電二極體的設計與製作 …………………………………26
3-2 CMOS光電二極體之特性量測 ……………………………………28
3-2.1光電二極體的電流-電壓(I — V)特性曲線量測 ………28
3-2.2光電二極體的電容電壓(C-V)特性曲線量測…………………28
2.5.3光電二極體的溫度特性量測……………………………………29
3-3雙載子接面電晶體(BJT)的設計與製作…………………35
3-4雙載子接面電晶體(BJT)之感溫特性量測………………37
3-4.1電晶體(BJT)之n值量測……………………………………37
3-4.2 感溫特性的量測 ………………………………………………38
3-5 結果與討論 ………………………………………………………49
3-5.1感光元件之特性…………………………………………………49
3-5.2感溫元件之特性…………………………………………………57
第四章感測器之前級信號處理電路設計 ……………………………58
4-1運算放大器之設計 ………………………………………58
4-2光感測器之前級信號處理電路 …………………………68
4-3溫度感測器之前級信號處理電路 ………………………73
4-4結果與討論 ………………………………………………75
第五章感測器與前置放大器於單一晶片之實現 ……………………76
5-1感測器與放大器於單一晶片之設計………………………………76
5-2模擬結果與討論……………………………………………………80
第 六 章結論及未來展望 ……………………………………………82
6-1結論 …………………………………………………82
6-1.1在感測元件方面……………………………………82
6-1.2在感測電路方面……………………………………83
6-2未來展望………………………………………………84
6-2.1在感測元件方面……………………………………84
6-2.2在感測電路方面……………………………………84
參考文獻 ………………………………………………………………86

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