臺灣博碩士論文加值系統

本論文主要目的是以CMOS標準製程技術，製作放大器和讀出電路完成多元化溫度量測系統。
在CMOS標準製程中可製作四種不同材質的熱敏電阻，根據實驗結果顯示，N-well之電阻溫度係數較大且對溫度有較高的靈敏度，為熱敏電阻之最佳元件。然後，我們也設計一低雜訊、低偏移電壓、高共模拒斥比、高輸入阻抗之運算放大器和儀表放大器，完成具有室溫補償之多元化測溫系統之設計。
最後，結合熱敏電阻、放大器、電壓電流轉換器和顯示晶片，完成一可攜式、低成本之溫度計，其線性量測範圍從32℃到43℃精確度為0.1℃。

The major objective of this thesis is to fabricate amplifier and readout circuit to accomplish advance temperature measurement system by standard CMOS process.
Using standard CMOS process , four types material of thermistor were fabricated. According to experimental results, the n-well material has better temperature coefficient of resistance and sensitivity. So it is suitable to be device of thermistor. Then, we have designed the low noise、low offset、high CMRR and high input impedance operational and instrumentation amplifier for advance temperature measurement system with ambient temperature compensation technique.
Finally, we have used thermisor、operational amplifier、instrumentation amplifier、voltage-to-current converter and display IC to accomplish the portable、low cost thermal meter. The meter can measure from 33℃ to 43℃ and sensitivity of the linear range is about 0.1℃.

中文摘要 I
英文摘要 II
誌 謝 III
目 錄 IV
圖 目 錄 VI
表 目 錄 VIII
第一章 緒 論 1
1-1 研究背景 1
1-2 研究動機與目的 2
1-3 論文架構與研究流程 3
第二章 感溫元件理論分析與探討 5
2-1 熱電堆 5
2-1-1 Seebeck效應 5
2-1-2溫度補償 7
2-1-3 等效電路 11
2-2熱敏電阻 13
2-2-1熱敏電阻之原理 13
2-3雙載子接面電晶體 17
2-3-1 VBE和溫度變化之理論分析 19
第三章 室溫感測元件之製作與量測 22
3-1熱敏電阻 22
3-1-1熱敏電阻之製作 22
3-1-2量測系統之建立 25
3-1-3感溫特性之量測 25
3-1-4電阻溫度係數 28
3-2雙載子接面電晶體 29
3-2-1雙載子接面電晶體之製作 29
3-2-2感溫特性之量測 30
第四章 放大器設計之分析 32
4-1運算放大器 32
4-1-1偏移電壓 36
4-1-1.1系統性偏移電壓 36
4-1-1.2隨機偏移電壓 38
4-1-1.3設計低輸入偏移電壓之準則 39
4-1-2雜訊 41
4-1-2.1雜訊推導 41
4-1-2.2設計低雜訊之準則 45
4-1-3模擬與佈局 46
4-2差動放大器 49
4-3儀表放大器 51
4-3-1模擬與佈局 53
4-4儀表放大器與差動放大器之比較 54
第五章 感測器結合放大器完成測溫系統之實現 56
5-1測溫系統介紹 56
5-2室溫補償 59
5-3讀出電路 63
5-4溫度量測範圍與誤差之探討 67
第六章 結論與展望 69
參考文獻 72

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