跳到主要內容

臺灣博碩士論文加值系統

(54.173.214.227) 您好!臺灣時間:2022/01/29 16:26
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:沈柏元
研究生(外文):Po-Yuan Shen
論文名稱:以氧化物底電極控制鐵電薄膜結晶方向之研究
論文名稱(外文):Control of Crystal Orientation of Ferroelectric Thin Films Grown on Metal Oxide Layers
指導教授:林鵬林鵬引用關係
指導教授(外文):Pang Lin
學位類別:碩士
校院名稱:國立交通大學
系所名稱:材料科學與工程系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:112
中文關鍵詞:鐵電薄膜鉭酸鍶鉍鋯鈦酸鉛鈦酸鉛釕酸鋇釕酸鍶晶格失契磊晶
外文關鍵詞:Ferroelectric Thin FilmsSBTPZTPTOBROSROmismatchEpitaxy
相關次數:
  • 被引用被引用:1
  • 點閱點閱:268
  • 評分評分:
  • 下載下載:51
  • 收藏至我的研究室書目清單書目收藏:0
利用MOD法以及Sol-gel法製備SBT以及PTO、PZT鐵電薄膜,分別利用[110]優選方向之SRO以及BRO為底電極,以Pt為上電極得到MIM電容結構,做物性以及電性量測。鐵電薄膜厚度約2500Å,利用X-Ray以及SEM分析可得知其結晶狀況。探討在不同底材披覆不同鐵電薄膜狀態下,薄膜介面應變能以及電性關係。
由X-Ray量測顯示SRO與BRO對於SBT與PTO沒有控制成長方向能力,而BRO對於PZT有控制其朝特定生長方向的現象,由TEM晶格影像可以發現BRO介面原子排列與PZT介面相契合。PTO與PbZr0.2Ti0.8O3出現極大漏電流現象,由SEM觀察得知PTO 與PbZr0.2Ti0.8O3晶粒顆粒較大,並根據AFM得知PTO與PbZr0.2Ti0.8O3表面粗糙度較高,因此出現較大漏電流密度現象。

SBT and PTO, and PZT ferroelectric thin films were prepared by matelorganic and sol-gel method in this study. The physical and electrical properties of the dielectric films, sandwiched in a MIM structure with [110] oriented SRO or BRO as bottom electrode and Pt as top electrode, are investigated. The thicknesses of these thin films were about 2500Å. The crystal structure and surface morphology were analyzed by X-Ray and SEM measurement. Interface strain energy and electricity properties of these MIM structures were measured and their correlations were studied.
X-Ray diffraction shows that SRO and BRO bottom electrode did not induce the SBT thin film growth in one direction. However, BRO bottom electrodes leaded to growth PZT ferroelectric thin film in (110) prefer direction.TEM lattice image showed an expitaxial relation between BRO and PZT at their interface. For typical PTO and PbZr0.2Ti0.8O3 films, the SEM images showed that the grain size and the roughness of PTO and PbZr0.2Ti0.8O3 were large than PZT(MPB).Therefore, the leakge current density of PTO and PbZr0.2Ti0.8O3 was larger than PZT(MPB).

目錄
中文摘要
英文摘要
致謝
目錄
表目錄
圖目錄
第一章 緒論............................................... 1
第二章 文獻回顧............................................3
2-1 鐵電材料原理.............................................3
2-2 鐵電陶瓷特性探討.........................................5
2-2-1 鐵電材料介電性質.......................................5
2-2-2 鐵電材料分極機構.......................................7
2-2-3 鐵電材料的劣化.........................................8
2-2-3-1 老化(Aging).....................................9
2-2-3-2 疲勞(Fattigue).......................................9
2-2-3-3 刻板性(Imprint).....................................10
2-2-4 非揮發性鐵電記憶體操作原理............................11
2-3磊晶薄膜基材與薄膜介面接合對於成長關係...................12
2-4鉭酸鍶鉍(SrBi2Ta2O9,SBT)結構與性質......................18
2-5鋯鈦酸鉛(PbZrxTi1-x O3,PZT) 與鈦酸鉛(PbTiO3,PTO)結構與性質..........................................................19
2-6鈣鈦礦結構氧化物電極.....................................20
2-6-1鎳酸鑭(LaNiO3)電極與鈷酸鉛鑭(La1-xSrxCoO3)電極.....21
2-6-2釕酸鋇(BaRuO3)電極與釕酸鍶(SrRuO3)電極.................22
第三章 實驗程序...........................................24
3-1基板準備.................................................24
3-1-1 BaRuO3/Si 基板準備....................................24
3-1-2 SrRuO3/Ru/SiO2/Si基板準備.............................24
3-2實驗設備.................................................25
3-2-1 射頻濺鍍系統..........................................25
3-2-2 退火系統..............................................25
3-2-3 上電極退火系統........................................26
3-3 金屬有機先驅液製程......................................26
3-3-1鉭酸鍶鉍先驅物(Precursors)溶液製備.....................26
3-3-2 鈦酸鉛與鋯鈦酸鉛先驅物(Precursors)溶液製備............28
3-3-3鍍膜方式...............................................29
3-3-4薄膜熱處理.............................................30
3-3-5薄膜上電極製備.........................................30
3-3-6 量測儀器..............................................31
第四章 結果與討論.........................................33
4-1旋塗鉭酸緦鉍薄膜鐵電薄膜於釕酸緦電極.....................33
4-1-1 X-Ray分析.............................................34
4-1-2 SEM分析...............................................35
4-1-3漏電流量測.............................................36
4-1-4介電常數量測...........................................37
4-1-5二次離子質譜儀(SIMS)量測...............................37
4-1-6電滯曲線量測...........................................38
4-2旋塗鉭酸緦鉍薄膜鐵電薄膜於釕酸鋇電極.....................39
4-2-1 X-Ray分析.............................................39
4-2-2 SEM分析...............................................40
4-2-3漏電流量測.............................................41
4-2-4介電常數量測...........................................42
4-2-5二次離子質譜儀(SIMS)量測...............................42
4-2-6電滯曲線量測...........................................43
4-3鈦酸鉛與鈦酸鋯鉛鐵電薄膜.................................44
4-3-1旋塗鈦酸鉛(PbTiO3)與鈦酸鋯鉛(PbZr1-xTixO3)鐵電薄膜於釕酸鋇電極........................................................45
4-3-1-1 X-Ray分析...........................................45
4-3-1-2 SEM分析.............................................48
4-2-1-3 TEM分析.............................................49
4-2-1-4漏電流量測...........................................50
4-2-1-5介電常數量測.........................................51
4-2-1-6電滯曲線量測.........................................51
第五章 結論...............................................53
Refereneces................................................107

References
[1] J.F.Scott, Ferroelectric Memories(2000)
[2] J.F.Scott and C.A.Araujo, science 246, p1400(1989)
[3] C.A.Araujo, J.D.Cuchiaro,L.D.MzMillan, M.C.Scott and J.F.Scott, Nature(London)374,p627(1995)
[4]E.K.Muller,B.J.Nichlson and G.E.Tunener,J.Electrochem Soc.,Vol 110,p69(1963)
[5]A.E.Feuersanger,A.K.Hanenlocher and A.L.Soloman,J.Electrochem Soc, p111(1987)
[6]I.H.Patt and S.Fireston,J.Vac.Sci.Technol Vol 8,p256(1971)
[7]W.J.Takei,N.P.Formigoni and M.H.Francombe,J.Vac.Sci.Technol Vol 7,P442(1969)
[8]M.Kojima,M.Okayama,T.Nakagawa and Y.Hamakawa,Jap.J.Appl.Phys.,Vol 22, p14(1983)
[9]M.Okada,S.Takai,M.Amemya and K.Tominaga,Jap.J.Appl.Phys.,Vol22,p14(1983)
[10]G.A.C.M spierimgs,M.J.E Ulenaers,G.L.Mkampschoer,H.A.M.Van Hal and P.K.Larwen,J. Appl. Phys.,Vol 70(4),P2290(1991)
[11]C.D.E.Lakeman and D.A.Payne,Am.Ceram.Soc.,Vol75(11),p3091(1992)
[12]G.M.Davis and M.C.Gowre,Appl.Phys.Lett.,Vol55p112(1989)
[13]R.A.Ray et al,Mater. Res. Soc. Symp. Proc.200,p141(1990)
[14]Kingery, Bowen, Vhlmann, Introduction to Ceramics,(1987)
[15] 徐靖薰 交通大學材料所碩士論文(1997)
[16] 吳朗,電子陶瓷(介電)全欣科技圖書,(1994)
[17] Arthony R. West, Soild State Chemistry and its Application,(1984)
[18] 傅勝利 陶瓷技術手冊(上) P403~P442 (1994)
[19] A.J.Moulson and J.M.Herbert. Electroceramics :Materials, Properties, Application. Chapman and Hall, (1990)
[20] Reza Moazzami, Ferroelectric Thin Film Technology for Semiconductor Memory, Semicond. Sci Technol 10 (1995) p375~p379
[21] L.H.Parker, and A.F.Tasch, Ferroelectric Material for 64Mb and 256Mb DRAMs,IEEE Circuits and Devices Magazine, Jan, p17
[22]D.J. Johnson, D.T.Amm, E.Griswold, K.Sreenivas, G.Yi, and M.Sayer, Mat. Res. Soc. Symp. Proc, vol200, p.289, (1990)
[23]C.A Paz de Araujo, J.D.Cuchiaro, L.D.McMillan, M.C.Scoot, and J.F.Scoot, Nature, vol.372,p.627, (1995)
[24] C.A Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, and J.F. Scott,, Nature, vol.372, p627, (1995)
[25] In Kyeong Yoo, Seshu B. Desu, Mat. Res. Soc. Symp. Proc. Vol.361, P.79~84,(1995)
[26]李雅明,吳世全,陳宏名,電子月刊第二卷第九期(1996)
[27] King-Ning Tu,J.W. Mayer,L.C. Feldman, Electronic Thin Film Science For Electrical Engineers and Materials Scientists, (1997)
[28]B.Aurivillius, Arkiv Kemi, vol 1, no.54, p463, (1949)
[29]陳三元, 藍邦強, 電子月刊第六卷第十期, (2000)
[30]G.D.Hu,I.H.Wilson,J.B.Xu,W.Y.Cheung,S.P.Wong, and H.K.Wong
[31]E.C.Subbarao,J.Am.Ceram.Soc,45,p166(1962)
[32]A.D.Rea, J.G.Thompson, and R.L.Withers, ActaCryst.B48, p412 (1992)
[33]Q.F.Zhou,H.L.W.Chan,C.L.Choy,Non-crystalline solids,(1999)
[34]E.C. Subbarao, Phys. Chem. Solids, vol23, p.665, (1962)
[35]賴怡年,清華大學材料科學與工程所碩士論文 (2000)
[36]鄭世裕 陶瓷技術手冊 壓電材料 (1994)
[37]S.Y.Hou,J.Kwo,R.K.Watts, and J.-Y. Cheng, Appl.Phys.Lett., 67(10), p1387,(1995)
[38]Mitsuaki Izuha, and Kazuhide Abe, et. al., Appl.Phys.Lett., 70(11), p1405, (1997)
[39]Q.X.Jia,X.D.Wu,S.R.Foltyn, and P.Tieari, Appl.Phys.Lett., 66(17), p2197, (1995)
[40] R. D. Sanchez, M. T. Causa, J. Sereni, et. al., " Specific heat, magnetic susceptibility and electrical resistuvity measurement on LaNiO3", J. of Alloys and Compounds, 191, p. 287, 1993.
[41] K. P. Rajeev, G. V. Shivashankar, A. K. Raychaudhuri, Solid State Communications, vol.79, p. 591, 1991.
[42]Hidehito OHBAYASHI, Tetsuichi KUDO and Tetsuo GEJO,Japaness Journal of Applied Physics, vol 13, no.1, p.1~7
[43] K.Takemura , S.Yamamichi , P.Y.Lesaicherre , K.Tokashiki , H.Miyamoto , H.Ono , Y.Miyasaka , M.Yoshida , , Jpn.J.Appl.Phys. Vol.34 , pp.5224-5229 , Part.1 , No.9B , September (1995) .
[44] S.Y.Cha , H.C.Lee , W.J.Lee , H.G.Kim , , Jpn.J.Appl.Phys. Vol.34 , pp.5220-5223 , Part.1 , No.9B , September 1995 .
[45] K.Kakuta , T.Tsurumi , O.Fukunaga , Jpn.J.Appl.Phys. Vol.34 , pp.5341-5345 , Part.1 , No.9B , September 1995 .
[46] K.Takemura , S.Yamamichi , P.Y.Lesaicherre , K.Tokashiki , H.Miyamoto , H.Ono , Y.Miyasaka , M.Yoshida , Jpn.J.Appl.Phys. Vol.34 , pp.5224-5229 , Part.1 , No.9B , September 1995 .
[47] K.Sakayori , Y.Matsui , H.Abe , E.Nakamura , M.Kenmoku , T.Hara , D.Ishikawa , A.Kokuubu , K.I.Hirota , T.Ikeda , Jpn.J.Appl.Phys. Vol.34 , pp.5443-5445 , Part.1 , No.9B , September 1995 .
[48] Y.Yamashita , H.Kanai , O.Furukawa , K.Hasegawa , S.Mukaeda , K.Handa , Jpn.J.Appl.Phys. Vol.34 , pp.5364-5367 , Part.1 , No.9B , September 1995 .
[49] H.Chazono , M.Fujimoto , Jpn.J.Appl.Phys. Vol.34 , pp.5354-5359 , Part.1 , No.9B , September 1995 .
[50] 曾俊元、周秀玉 化工期刊第八卷第五期 P128~137 (2000)
[51] C.Jeffery Brinjer, George W.Scherer, Sol-Gel science,Academic PRESS, INC
[52] C.J. Brinker and G.W. Scherer, Sol-Gel Science. New York: Academic Press, (1990)
[53] Q.Gan, K.Wasa, C.B. Eom ,materials science and engineering B, (1998)
[54] Katsuyuki Ishikawa and Hiroshi Funakubo,Applied Physics Letters V75, 13, (1999)
[55]Y.K.Wang ,T.Y.Tseng,Pang Lin,Appl. Phy. Lett.,Vol80, N20, p3790 ~3792 (2002)
[56] P.C.Joshi, S.O.Ryu, X.Zhang, S.B.Desu ,Appl. Phys Lett 70 (9): 1080-1082 MAR 3 (1997)
[57]朱聰明 交通大學材料所博士論文 (1999)
[58] M.P.Brassington, in Int’l Electron Device and Material Symp.p136-143,(1990)
[59] 李雨龍 清華大學材料科學與工程所碩士論文(2000)
[60] M.De Keijser, D.M. de Leeuw, P.J. van Veldhoven, A.E.M. De Veirman, D.G. Neerinck, Thin Solid Films; 266 p157-167 1995
[61] J.P.MaRa, W.Hackenberger, and S.Trolier-McKinstry, Journal of Applied Physics, V84,N9 p5147-5154 1998
[62] Nicole Floquet, Philippe Gaucher,Jounal of Applied Physics; 1998 V84 N7 p3815~3826
[63]Kakegawa,K.et al,Solid State Commun,24,769(1997)
[64] X.H.DAI, Z.LI, X.Z. XU, S.-K. CHAN and D.J. LAN,Ferroelectrics , V135 pp39-48 (1992)
[65] K.Wojcik, Ferroelectrics ,82 ,25,(1988)
[66] M.C.Gelabert, R.A.Laudise, R.E.Rinan,Journal of Crystal growth, p195-203(1999)
[67] Yet-Ming Chiang,Dunbar Birnie Ⅲ, W. David Kingery, Physical Ceramics, Wiley, New York
[68]Katsumi SAMWSHIMA, Takashi NAKAMURA,KAZUHIRO HOSHIBA,Yuichi NAKAO, Akira KAMISAWA,Tsutomu ATSUKI,Nobuyuki SOYAMA and Katsumi OGI, Jpn. J. Appl. Phys,94144~4146 (1993)
[69] M. Shepard, S. McCall, G. Cao, and J. E. Crow, "Thermodynamic properties of perovskite ARuO3 (A=Ca, Sr, and Ba) Single crystals", J. Appl. Phys., 84(8), p. 4978, (1997)
[70] K. M. Satyalakshmi, R. M. Mallya, et. al., Appl. Phys. Lett., vol.62, p. 1233, (1993)
[71] J. D. Klein, A. Yen, and S. L. Clauson, "Epitaxial LaNiO3 interlayers for ferroelectric memory structures", Mater. Res. Soc. Symp. Proc., 341, p. 393, (1994)
[72]J. D. Klein and S. L. Clauson, " Optical band gap implications for ferroelectric memory", Mater. Res. Soc. Symp. Proc., 361, p. 147, (1995)
[73]P.M. Raccah and J.B. Goodenough, Phys. Rev. 155, p.155, (1967)
[74]R. Dat, G. J. Lichtenwalner, O.Auciello, and A.I. Kingon, Appl, Phys. Lett, 64(20), p.2673,(1994)
[75]H.N.AlShareef, K.D.Gifford, S.H.Rou, P.D.Hren, O.Auciello, A.I.Kingon, Integrated Ferroelectrics, p.321, (1993)
[76]Lynnette D.Madsen, Louise Weaver, Henrik Ljungcrantz, Alison J.Clark, J. of Electronic Mater. 27, p.418,(1998)
[77]Jeong Soo Lee, Hyun Ja Kwon, and Young Woo Jeong, Appl. Phys. Letters, V73, N2, p.166, (1998)
[78]S.E. Moon,T.K. Song, S.B. Back, and S.-I Kwun, Appl. Phys. Letters, V75, N2, p.2827, (1999)
[79]M.C. Gelabert, R.A. Laudise, R.E. Riman, J. Crys. Growth, p195, (1999)
[80]F.C. Frank and J.H. van der Merwe, Proc. Roy. Soc. A189, 205, (1949)
[81]J.W. Matthews, in Epitaxial Growth, ed. J. W. Matthews, Academic Press, New York,(1975)
[82]J.W. Matthws, J. Vac. Sci. Tech. 12, 126,(1975)

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top