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研究生:張簡鵬崇
研究生(外文):Peng Chung Jang Jian
論文名稱:新嵌入式內層導線與低介電常數材料化學機械研磨之研究
論文名稱(外文):Study on a Novel Damascene Process and SiLK CMP
指導教授:馮明憲馮明憲引用關係蔡明蒔蔡明蒔引用關係
指導教授(外文):M. S. FengM. S. Tsai
學位類別:碩士
校院名稱:國立交通大學
系所名稱:材料科學與工程系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:56
中文關鍵詞:化學機械研磨低介電材料
外文關鍵詞:CMPlow kSiLKdamascene
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在積體電路工業技術持續的進步之下,元件的設計日趨複雜,深次微米結構的需求也日益的增加。因此晶圓表面的平坦度必須提高,以配合微影技術的要求,綜合及大型積體電路金屬化新近發展的平坦化技術中,化學機械研磨 ( Chemical Mechanical Polish ) 是目前可達到全域性平坦化的技術。而在元件尺寸的縮小及積極度增加的情況之下,多層導線所造成的RC延遲也相對的增加。為了解決此問題,銅導線的運用與低介電常數絕緣材料的引進也就成為日後發展的重要因數。在低介電常數材料方面,由於高分子材料具有低薄膜應力與低介電,而成為經屬導線間最佳的絕緣材料。但由於其化學不活潑性與柔軟性,也造成在化學機械研磨方面的重大挑戰。本論文也就針對此問題對高分子低介電材料在經過化學機械研磨後,所產生的物理和化學變化來做探討。
並且也提出一種新的製程,配合無電鍍法來建構我們的內層導線。而此法也可配合日後所發展出的新低介電材料之運用,並藉此新的製程技術來改善銅導線在經由化學機械研磨後所造成的一些問題。

When the device dimension is shrink, the RC delay becomes the dominant performance limiting factor. In order to Improve the RC delay time, Cu is used to replace the conventional Al. Due to it has the lower resistivity ( 1.67 Ω-cm ) and high electromigration resistance. Moreover integration with low-k dielectric is a way to reduce the interconnect contribution to the parasitics. Using low-k materials as intra/interlevel-dielectric ( ILD ) have led to a significant reduction in intralevel and interlevel capacitance. In comparison to the conventional Al wiring and oxide ILD interconnect of the some dimension, about 30% conductivity, 20% intralevel and 30% interlevel capacitance improvement has been observed in the Cu/low-k interconnect. SiLK is a polymer low-k material film, the characterizations of physical and chemical are soft and inert. So in order to understand the alteration of characterizations of physical and chemical during over-polishing, we designed some experiments to research SiLK CMP. In general, the damascene process is popularly used in ULSI process. but it often results some problems. For example, as we use CMP to polish the metals over the trenches will induce copper dishing and oxide erosion. Those will decrease circuit performance. So we bring up a novel damascene process.

Chap 1. Introduction 1
1.1 Moiontivat 1
1-1.1 Chemical-Mechanical Polishing 1
1-1.2 Metallization 3
Chap 2. Fundamental and Experimental of Polymer CMP 6
2-1 Background 6
2-1.1 Basic Concept on Chemical Mechanical Polishing 6
2-1.2 Low Dielectric Constant Polymer Material - SiLK 7
2-1.3 Mechanism of Polymer CMP 11
2-1.4 Contact Displacement of Cu2+ ions and Si films 14
2-2 Experimental 15
2-2.1 Sample Preparation 15
2-2.2 Polisher Setup 15
Chap 3. Organic Low-k SiLK CMP 16
3-1 Mechamical Abrasion of SiLK CMP 16
3-2 Chemical Assistance for SiLK CMP 22
Chap 4. A Novel Cu / Low-k integration Process 33
4-1 Introduction 33
4-2 Experimental 34
4-2.1 Sample preparation 34
4-2.2 Chemical Mechanical Polishing 35
4-3 Results and Discussion 37
4-3.1 Nitrogen Treatment 37
4-4 Selective Contact Displacement of Electroless Cu Plating 41
4-4.1 Experimental 42
4-4.2 Results and Discussion 43
Chap 5. Conclusions 46
5-1 Conclusions 46
Chap 6. Reference 48

( 1 ) S. Morimoto, et. al., “ Characterization of the chemical-mechanical polishing of intermetal dielectric film, ” Proc. Electrochem. Soc., 449, ( 1993 ).
( 2 ) B. Davarl, et. al., Tech. Digest, IEEE-IEDM, ( 1989 ).
( 3 ) B. Zhao, D. Feiler, et. al., “ Dual damascene interconnect of copper and low permittivity dielectric for high performance integrated circuits, ” Electrochemical and solid-state letters, 276-278, ( 1998 ).
( 4 ) M. T. Bohr, in Proe, 1995 IEEE Int, Electron, Device Mtg., Washington, DC. December 10-13, 1995, pp.241-242.
( 5 ) M. T. Bohr, in Advanced Metallization and Interconnect Systems for ULSI Applications, Material Research Society , Pittsburgh, PA 1996. pp.3-10.
( 6 ) P. H. Townsend, S. J. Martin, J. Godschalx, D. R. Romer, D. W. Smith, Jr. D. Castillo, R. De Vries, G. Buske, N. Rondan, S. Froelicher, J. Marshall, E. O. Shaffer, J. H. Im, Mater, Res, Soc, Symp, Proc, 1997. 476, 9.
( 7 ) Steven J. Martin, James P. Godschalx, Michael E. Mills, Edward O. Shaffer II, and Paul H. Townsend, “ Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect, ” Adv. Mater. 2000, 12, no. 23, 1769-1777.
( 8 ) Private communication from T. M. Stokich, 2000.
( 9 ) Christopher L. Borst, Dipto G. Thakurta, William N. Gill, Romald J. Gutmann, “ Chemical Mechanical Polishing Mechanisms of Low Dielectric Constant Polymer in Copper Slurries, ” Journal of The Electrochemical Society, ( 11 ), 4309-4315, 1999.
(10) V. H. Bulsara, Y. Ahn, S. Chandrasekar, T. N. Farris, “ Nechanics of Polishing, ” Journal of Applied Mechanics, 1998, JUNE, vol. 65, 410-416.
(11) L. M.Cook, J. Non-crydtallineSolid, 120 (1990 ) 152-154.
(12) D. Briggs, M. P. Seah, Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy. Wiley & Sons, Chichester, 1987.

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