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研究生:林于順
研究生(外文):Yu-shuon Lin
論文名稱:(Ta2O5)1-X-(TiO2)X介電薄膜研究與微波被動元件製作
論文名稱(外文):A Study on (Ta2O5)1-X-(TiO2)X Dielectric Film and the Application on Microwave Passive Device
指導教授:林 鵬
指導教授(外文):Pang Lin
學位類別:碩士
校院名稱:國立交通大學
系所名稱:材料科學與工程系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:86
中文關鍵詞:(Ta2O5)1-X-(TiO2)Xdielectric thin filmIrO2magnetron rf sputtermicrowave passive device
外文關鍵詞:五氧化二鉭-二氧化鈦介電薄膜二氧化銥磁控射頻濺鍍法微波被動元件
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本論文為利用反應式射頻磁控濺鍍法製備(Ta2O5)1-X-(TiO2)X介電薄膜,並探討在低頻與微波下之特性。在低頻方面,分別以IrOX與Al為下上電極,將薄膜製作成MIM電容結構,做物性與電性分析。非晶質薄膜的初始厚度小於300埃。利用快速退火製程使薄膜結晶,探討不同退火溫度、時間、OMR與薄膜成分下,薄膜之結晶性、電性與表面型態之特性與關係。發現薄膜的退火溫度須大於650℃才會結晶,薄膜中TiO2佔8.8mole%時有最大介電常數,退火溫度越高介電常數與漏電流越高。其漏電流機制在高電場下主要為普勒-法蘭克發射(Poole-Frenkel emission)。
以此介電薄膜做成之微波濾波器是以CPW方式量測其高頻下之S參數,量測結果與Sonnet模擬比對,發現共振頻率偏移模擬值,其原因為介電層厚度及介電常數偏移設計值所致。

Amorphous (Ta2O5)1-X-(TiO2)X films were fabricated by rf magnetron co-sputtering and annealed through a rapid thermal processing(RTP). The film thickness was controlled within 300A. The film was sandwiched between IrO2 and Al as the bottom and top electrode in order to study its electrical and physical properties. The relationships among surface roughness, annealing temperature, annealing time, leakage current and dielectric constant was discussed. The highest dielectric constant was obtained for a film of composition at TiO2/Ta2O5 ratio equal to 9.65%. The film crystallized at temperature larger than 650oC and its leakage current increased with RTP temperature. The leakage current mechanism is identified to be Pool-Frenkel emission.
The S parameters of microwave filter fabricated by the dielectric film were measured by CPW method. The result was compared with Sonnet simulation. The discrepancy between the experimental central resonant frequency and the simulated one is found due to the deviation of dielectric constant and film thickness the preset one.

中文摘要…………………………………………………………………Ⅰ
英文摘要…………………………………………………………………Ⅱ
致謝………………………………………………………………………Ⅲ
目錄………………………………………………………………………Ⅳ
表目錄……………………………………………………………………Ⅷ
圖目錄……………………………………………………………………Ⅸ
第一章 緒論………………………………………………………………1
1-1 簡介…………………………………………………………………1
1-2 研究動機……………………………………………………………3
第二章 文獻回顧…………………………………………………………6
2-1 陶瓷材料的介電性質………………………………………………6
2-1-1 介電常數………………………………………………………6
2-1-2 介電損失………………………………………………………8
2-1-3 介電強度………………………………………………………9
2-1-4 漏電流機制……………………………………………………9
2-2 Ta2O5薄膜…………………………………………………………12
2-2-1 製程方法………………………………………………………12
2.2-2 Ta2O5晶體結構 ………………………………………………14
2-3 (Ta2O5)1-X-(TiO2)X………………………………………………15
2-3-1 (Ta2O5)1-X-(TiO2)X…………………………………………15
2-3-2 (Ta2O5)1-X-(TiO2)X 薄膜性質 ……………………………16
2-4 底電極選擇…………………………………………………………16
2-5 退火影響與漏電流控制……………………………………………18
第三章 實驗步驟…………………………………………………………26
3-1 實驗材料……………………………………………………………26
3-1-1 薄膜製備與光阻材料…………………………………………26
3-1-2 氣體……………………………………………………………26
3-2 實驗設備……………………………………………………………27
3-2-1 射頻濺鍍系統…………………………………………………27
3-2-2 蒸鍍系統………………………………………………………27
3-2-3 爐管退火系統…………………………………………………27
3-2-4 快速退火系統…………………………………………………28
3-2-5 曝光系統………………………………………………………28
3-3 電容製備……………………………………………………………28
3-3-1 基板準備………………………………………………………28
3-3-2 IrOx底電極製備………………………………………………28
3-3-3 Pt底電極製備…………………………………………………29
3-3-4 (Ta2O5)1-X-(TiO2)X薄膜電容備製…………………………29
3-3-5 Al上電極備製…………………………………………………29
3-4 微波濾波器之製備…………………………………………………30
3-4-1 基板準備………………………………………………………30
3-4-2 黃光製程………………………………………………………30
3-4-3 複合金屬底電極製備…………………………………………30
3-4-4 (Ta2O5)1-X-(TiO2)X介電層製作……………………………31
3-5 特性量測……………………………………………………………31
3-5-1 物性分析………………………………………………………31
3-5-2 電性分析………………………………………………………32
3-5-3 微波特性量測…………………………………………………32
第四章 結果與討論………………………………………………………40
4-1 膜厚分析……………………………………………………………40
4-1-1 濺鍍時間與膜厚關係…………………………………………40
4-1-2 鈦靶功率對膜厚影響…………………………………………41
4-1-3 快速退火溫度對膜厚收縮影響………………………………41
4-1-4 OMR對膜厚影響 ………………………………………………41
4-2 成分分析……………………………………………………………42
4-3 電性量測……………………………………………………………42
4-3-1 底電極種類對漏電流特性影響………………………………42
4-3-2 退火氣氛對漏電流特性影響…………………………………43
4-3-3 鈦靶功率變化對介電特性影響………………………………44
4-3-4 厚度降低對介電特性影響……………………………………49
4-4 漏電流特性改善……………………………………………………50
4-5 漏電流機制…………………………………………………………51
4-6 微波濾波元件製作…………………………………………………52
第五章 結論………………………………………………………………56
Refereneces………………………………………………………………82

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