臺灣博碩士論文加值系統

在之前的報告中，我們已經利用無電鍍鈀誘發非晶矽薄膜結晶（EPIC）來取代在金屬誘發結晶(MIC)/金屬誘發側向結晶(MILC)製程中的物理汽相沈積鈀。利用EPIC法所誘發的複晶矽晶粒的結晶性及薄膜結構已經被證實。根據這些結果，EPIC法推斷可以應用在複晶矽薄膜電晶體元件的製作。
在本篇論文中，利用高溫傳統SPC薄膜電晶體元件的參數製作EPIC薄膜電晶體元件來找出在EPIC薄膜電晶體元件的問題來源。矽化鈀殘留和未誘發的多晶矽晶粒區是造成EP
IC薄膜電晶體元件特性不佳的主要原因。
之後我們提出利用兩階段爐管退火結合後續高溫快速退火處理可以用來改善EPIC薄膜電晶體元件的特性。兩階段爐管退火步驟可以減少矽化鈀的殘留，而後續高溫快速退火處理可以增加結晶性. EPIC薄膜電晶體的元件特性也可以獲得改善。

In our previous work, a novel method, electroless plating Pd induced a-Si crystallization (EPIC), was used to replace the PVD Pd during MIC/MILC process. The crystallinity and film structure of MIC/MILC poly-Si by EPIC method had also been investigated. According to results, EPIC method could be suggested to fabricate poly-Si TFT device.
In this study, EPIC-TFT´s was fabricated by using high temperature SPC-TFT´s parameters to find out the problem sources in EPIC-TFT´s. Palladium silicide contamination and non-induced a-Si regions were main reasons caused worse performance in EPIC-TFT´s.
Then, a two-step conventional furnace annealing (CFA) combined with high temperature rapid thermal annealing (RTA) was proposed to improve performance of EPIC-TFT´s. The two-step conventional furnace annealing step could reduce palladium silicide contamination and high temperature rapid thermal annealing step could improve crystallinity. Electrical properties of EPIC-TFT´s also could be improved.

Content
Abstract in
Chinese…………………………………………………………………i
Abstract in English…….………………………………………………….………. iii
Acknowledgement…………………………………………………………………..v
Content.……………………………………………………………………….vi
Table Caption……………………………………………………………………viii
Figure Caption…………………………………………………………………….ix
Chapter 1 Introduction………………………………………………………..1
1.1 General Background and Motivation……………………………………………1
1.2 Crystallization Method…………………………………………………………...2
1.2.1 Solid-Phase Crystallization (SPC)…………………………………………..2
1.2.2 Excimer Laser Annealing (ELA)……………………………………………...3
1.2.3 Metal Induce Crystallization (MIC) and Metal Induce Lateral Crystallization (MILC)…………………………………………………………………………….4
1.2.4 Characteristics of Poly-Si Induced by Electroless Plating Pd (EPIC) method..5
1.3 Thesis Outline…………………………………………………………………….6
1.4 References………………………………………………………………………...9
Chapter 2 The Problems of Poly-Si TFT´s Fabricated by EPIC Method……………………………………………………………………….11
2.1 Introduction………………………………………………………………………11
2.2 Experimental details……………………………………………………………...12
2.2.1 Pre-pattern wafer Process……………………………..…………………….12
2.2.2 Device Fabrication Process………………………………………………….13
2.2.3 SEM………………………………………………………………………….13
2.3 Results and Discussion…………………………………………………………...13
2.3.1 Characteristics of Poly-Si Grains Induced by EPIC Method………………..13
2.3.2 Electrical Properties of EPIC- TFT´s Using High Temperature SPC- TFT´s Parameters................................................................................................................16
2.4 Summary…………………………………………………………………………17
2.5 References………………………………………………………………………..39
Chapter 3 Improvement Using Two-step Furnace Annealing
Combined with High-temperature Post-RTA Treatment on
EPIC-TFT´s….…………………………………………………………..………..40
3.1 Introduction………………………………………………………………………40
3.2 Experimental Procedure………………………………………………………..41
3.2.1 Wafer Preparation……………………………….………………..41
3.2.2 XRD………………………………….………………………………41
3.2.3 TEM………………………………….………………………………41
3.3 Results and Discussion…………………………………………………………..41
3.4 Summary…………………………………………………………………………44
3.5 Reference………………………………………………………………………..57
Chapter 4 Conclusion…………………………………………………………58

1.4 References
[1]. T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices , vol 36, 1929 (1989).
[2]. J.-I. Ohwada, M. Takabatake, Y. A. Ono, A. Mimura, K. Ono, and N. Konisji, IEEE Trans. Electron Devices, vol 36, 1923 (1989).
[3]. I.-W. Wu, in Dig. Tech. Papers, SID＇95, pp. 19-22
[4]. H. Kuriyama and H. Hamada, Proc. 26th Eur. Solid State Device Reserch Conf., 1996, pp. 1043-1048
[5]. G. K. Giust, T. W. Sigmon, J. B.Boyce, and J. Ho, IEEE Electron Device Lett., vol 20,77-79,1999
[6]. S. W. Lee and S. K. Joo, IEEE Electron Device Lett.. vol. 17, p. 160, 1996
[7]. G. A. Bhat, Z. Jin, H. S. Kwok, and M. Wong, IEEE Electron Device Lett., vol 20,97-99,1999
[8]. T. Aoyama, G. Kawachi, N. Konishi, T. Suzuki, Y. Okajima, and K. Miyata, J. Electrochem. Coc., vol 136, 1169 (1989)
[9]. Z. Jin, G. A. Bhay, M. Yeung, H. S. Kwok and M. Wong, J. Appl. Phys., vol 84,194 (1998).
[10]. T. Hempel and O. Schoefeld, Solid State Commun., 85,921 (1993).
[11]. S. W. Lee, Byung-II Lee, T. K. Kim and S. K. Joo, J. Appl. Phys., vol 85,7180(1999).
[12].S. F. Gong, H. T. G. Hentzell, A. E. Robertsson, L. Hultman, S.-E. Hornstrom, and G. Radnoczi, J. Appl. Phys., vol 62,3726 (1987).
[13].Shunji Seki, Osamu Kogure and Bunjiro Tsujiyama, IEEE Electron Device Lett., vol. 8, no. 8, August 1987, p368-370
[14].T. J. King, M. G. Hack and I-Wei Wu, J. Appl. Phys., vol. 75, no. 2, 15 January 1994, p.908-913
[15].C. Hayzelden and J. L. Batstone, J. Appl. Phys. 73, 8279 (1993)
[16].T. Hempel and O. Schoenfeld, Solid State Commun. 85, 921 (1993)
[17]. Incropera F. P. and de Witt D. P., New York :Wiley, 1983.
[18]. Fogarassy E., Pattyn H., Elliq M., Slaoui A., Prevot B., Stuck R., de UnamunoS., and Mathu E. L., Appl. Surf. Sci., vol 69,231, 1993.
[19]. R. F. Eood and G. E. Giles, Phys. Rev., vol. 32, pp. 2923-2942, 1981.
[20]. K. Sera, F. Okumura, H. Uchida, S. Itoh and K. Hotta, IEEE Trans, Electron Device, vol.36, pp.2868-2872, 1989.
[21]. K. Shimizu, O. Sugiura and M. Matsumura, Japan J. Appl. Phys.,vol.29, ppL1775-L1777, 1990.
[22].G. Ottaviani, D. Sigurd, V. Marrello, J. W. Mayer, and J. O.McCaldin, J. Appl. Phys. 45, 1730(1974)
[23].T. J. Konno and R. Sinclair, Master. Sci. Eng., A 179/180, 426(1994)
[24].L. Hultman, A. Robertson, H. T. G. Hentzell, and I. Engstrom, J. Appl. Phys. 62, 3647 (1987)
[25].G. Radnoczi, A. Robertson, H. T. G. Hentzell, S. F. Gong, and M. —A. Hasan, J. Appl. Phys. 69, 6394 (1991)
[26].E. Nygren, A. P. Pogany, K. T. Short, J. S. Williams, R. G. Elliman, and J. M. Poate, Appl. Phys. Lett. 52, 439 (1988)
[27].R. J. Nemamichi, C. C. Tsai, M. J. Thompson, and T. W. Sigmon, J. Vac. Sci. Technol., vol 19, 685 (1981).
[28].G. Liu and S. J. Fonash, Appl. Phys. Lett. 55, 660 (1989)
[29].R. J. Nemanichi, R. T. Fulks, B. L. Stafford, and H. A. Vanderplas, J. Vac.Sci.
Technol., A 3, 938 (1985).
[30].Y. Kawazu, H. Kudo, S. Onari, and T. Arai, Jpn. J. Appl. Phys. , vol 29, 2698 (1990).
[31].S. W. Russel, J. Li, and J. W. Mayer, J. Appl. Phys., vol. 70, pp5153, 1991.
[32].K. N. Tu, Appl. Phys. Lett. 27 (1975) 221.
[33].J. H. Kim, J. Y. Lee, Jpn. J. Appl. Phys. 35, (1996) 2052
[34].U. Koster, P. Weiss, J. Non-cryst. Solids 17 (1975) 359.
2.5 References
[1]. J. M. Poate, D. C. Jacobson, F. Priolo, and M. O. Thompson, Mater. Res.
Soc. Symp. Proc. 128, 533 (1989).
[2]. S. W. Lee, Y. Jeon, and S. K. Joo, “Pd induced lateral crystallization of amorphous Si thin films”, Appl. Phys. Lett, vol 66, pp.1671- 1673, 1995.
[3]. S. W. Lee, Byung-II Lee, T. K. Kim and S. K. Joo, “Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature”, J Appl. Phys., vol 85, pp.7180 —7184, 1999.
[4]. W. D. Buckley and S. C. Moss, Solid State Electron. Vol. 15, 1331 (1972).
[5]. G.W. Rubloff, P.S. Ho, J.F. Freeouf and J.E. Lewis. Phys.Rev. B 23, 4183 (1981).
[6]. F. A. Quli and J. Singh, Mat. Sci. Eng. B67, 139 (1999)
[7]. K. N. Tu, in Methods and Materials in Microelectronic Technology, edited by J. Bargon (Plenum, New York, 1984)
[8]. S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983)
[9]. C. —D. Lien and M. —A. Nicolet, Thin Solid Films 143, 63 (1986)
[10].L. S. Hung, E. F. Kennedy, C. J. Palmstrom, J. O. Olowolafe, J. W. Mayer, and H. Rhodes, Appl. Phys. Lett. 47, 236 (1985)
[11].F. M. d＇Heurle, J. Mater. Res. 3, 167 (1988)
[12].L. A. Clevenger and C. V. Thompson, J. Appl. Phys. 67, 1325 (1990)
[13].L. A. Clevenger and C. V. Thompson, J. Appl. Phts. 67, 1325 (1990)
3-5 References
[1]. C. S. Wei, J. Van der Spiegal, and J. Santiago, J. Appl. Phys. 58 (11), 1985
[2]. M. Wang, Z. Meng, and Man Wang, IEEE Trans. on Ele. Dev. Vol. 47, 2061 (11), 2000
[3]. C.-D. Lien and M.-A. Nicolet, Thin Solid Film, 143 (1986), p.63-72