本研究是利用化學溶液法將SBT與PZT鐵電薄膜，分別沉積在Pt/Ti/SiO2/Si(MFM)與Al2O3/Si(MFIS)二種基板上，藉此探討試片經過2000C〜5000C還原氣氛退火後，在結構與電性上的差異。實驗發現還原氣氛退火對MFM結構的SBT與PZT鐵電薄膜試片會造成殘留極化值的降低，且降低的程度隨退火溫度而提昇。對MFM結構的PZT鐵電薄膜試片而言，本身抵抗還原氣氛退火的劣化作用可達5000C；但沉積Pt上電極後，其殘留極化值在2000C時就會嚴重劣化，這應該是與Pt的觸媒效應有關。另外對於SBT鐵電薄膜而言，經過還原氣氛退火後會造成MFM結構試片的殘留極化值降低；及MFIS結構試片的電容值嚴重降低，根據SIMS結果可發現造成電性劣化的來源，來自於鐵電成分的變動。當SBT試片沉積上電極後，電性受還原氣氛退火的劣化程度會降低，此現象則出自於上電極抑制SBT鐵電成分的變動所致。在漏電流方面，實驗顯示MFIS結構的SBT試片經過還原氣氛退火後，會大幅降低漏電流密度，此應該是由於退火過程中，基板形成鋁-矽-氧非晶質所致。

The SBT and PZT thin films were fabricated on Pt/Ti/SiO2/Si and Al2O3/Si substrates by using MOD process. The effects of forming gas annealing on structure and electrical properties of ferroelectric thin films annealed at 200oC~ 500oC will be investigated in this work. The results show that the forming gas annealing will cause the degradation of remanent polarization of both SBT and PZT films on Pt/Ti/SiO2/Si (MFM structure). However, the degradation is more serious for the PZT films with Pt coating prior to forming gas annealing that could be related to the catalyst effect of Pt. On the other hand, For the PZT and SBT films on Al2O3/Si, since the PZT films is difficult to crystallize the peorvskite phase on the Al2O3/Si, the effect of forming gas annealing is focused on the SBT /Al2O3/Si. It was found that after forming gas annealing treatment, the capacitance was reduced. According to SIMS analysis, it shows that the degradation is probably related to the composition variation of SBT film. However, it was observed that the leakage current of SBT films on Al2O3/Si substrates was reduced about one and half orders magnitude as compared to that without forming gas annealing.

目錄
中文摘要 i
英文摘要 ii
誌謝… iii
目錄… iv
圖目錄 viii
第一章 前言與研究動機中文摘要 1
第二章 文獻回顧 5
2-1 鐵電性質 5
2-2 鐵電薄膜PZT及SBT的基本介紹 6
2-3 鐵電薄膜PZT及SBT在電容結構上還原氣氛退火劣化的研究 9
2-3-1電極種類的影響 10
2-3-2阻擋層的應用 12
2-3-3 鐵電薄膜本質的改善 13
2-3-4 氣氛種類的影響及回復 14
2-3-5 還原氣氛退火溫度的影響 16
第三章 實驗步驟 18
3-1 基板的製備 18
3-1-1 Pt/Ti/SiO2/Si基板的製備 18
3-1-2 Al2O3/Si/Pt基板的製備 18
3-2 鐵電薄膜的製備 19
3-2-1 PZT/PT溶液的配製 19
3-2-2 PZT及PT薄膜的製作 20
3-2-3 SBT溶液的配製 20
3-2-4 SBT薄膜的製作 20
3-3 上電極的製備 21
3-4 還原氣氛退火條件 21
3-4 鐵電薄膜的結構分析 21
3-4-1 厚度的測量 22
3-4-2 鐵電相之分析 22
3-4-3 SEM分析 22
3-4-4 TEM分析 22
3-5 鐵電薄膜的電性分析 23
3-5-1 極化-電場曲線(Polarization-Electric Curve)之量測 23
3-5-2 漏電流(Leakage Current)之量測 23
3-5-3 電容值之量測 23
3-5-6 成分擴散現象的偵測 23
第四章 結果與討論 25
4-1 還原氣氛退火對PZT鐵電薄膜在MFM結構上的影響 25
4-1-1 PZT鐵電薄膜的製備 25
4-1-2 還原氣氛退火退火溫度的影響 25
4-1-3 電極種類的影響 26
4-1-4 回復退火的影響 28
4-2 還原氣氛退火對PZT鐵電薄膜在MFIS結構上的影響 29
4-2-1 PZT鐵電薄膜的製備 29
4-2-2 PT鐵電薄膜的製備 30
4-3 還原氣氛退火對SBT鐵電薄膜在MFM結構上的影響 33
4-3-1 SBT鐵電薄膜的製備 34
4-3-2 還原氣氛退火退火溫度的影響 34
4-3-3 電極種類的影響 34
4-3-4 回復退火的影響 37
4-4 還原氣氛退火對SBT鐵電薄膜在MFIS結構上的影響 37
4-4-1 SBT鐵電薄膜的製備 38
4-4-2 還原氣氛退火溫度的影響 39
4-4-3 電極種類的影響 40
4-4-3 FGA對基板的影響 43
4-5 MFM結構上PZT鐵電薄膜與SBT鐵電薄膜之劣化差異研究 44
第五章 結論 46
參考文獻 47

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