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研究生:陳逸帆
研究生(外文):I-Fan Chen
論文名稱:量子點雷射之研究
論文名稱(外文):Studies of Quantum Dot Lasers
指導教授:李建平李建平引用關係
指導教授(外文):Chien-Ping Lee
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:57
中文關鍵詞:量子點量子點雷射雷射
外文關鍵詞:Quantum dotQuantum dot laserslaser
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以量子點當作主動層的半導體雷射,稱為量子點雷射,由於是三維方向都被侷限的形況,理論上會有分離(discrete)的能態密度,有很高的差動增益(differential gain),所以我們可以預期量子點雷射會有很低的起始電流,很高的特徵溫度,很窄的光譜,和很大的調變頻寬,有很好的雷射特性。
本實驗我們以InAs/GaAs材料拿來做成自聚性的量子點,實驗主要研究了基底厚度對光頻譜的影響,實際上量子點雷射的頻譜是非常複雜的,有了這樣的一個認知,我們能夠在去除基底厚度對頻譜的影響條件下,再更進一步深入的的研究量子點頻譜的特性。且量子點雷射對溫度及電流也極為敏感,這也是值得研究的,同時藉由量測雷射其他特性的變化,能更進一步了解複雜的量子點結構。

The quantum-dot lasers are semiconductor lasers which use Quantum-dot as their active region medium. Because electrons in quantum-dots are confined in three dimensions and have discrete energy density of state theoretically , quantum dot lasers are predicted to have very low threshold current density , high characteristic temperature and narrow bandwith ..etc.
In this paper , we mainly investgate the effect of the thickness of the GaAs substrste to quantum dot lasers . Besides, we investgate the factors which affect the characters of QD lasers like cavity length and temperature..etc. The results indicate that the dominant mechanism leading to the regular modulation of the emission spectra in these quantum-dot lasers is related to the device thickness,although there some additional features present in some of the measured spectra that do not appear to be related to the cavity length or thickness. It may be that in quantum-dot devices where substrate effects are suppressed that other mechanism cause regular or quasiregular mode distribution.

目錄
第一章 簡介------------------------------------ 1
第二章 基本原理-------------------------------- 3
2.1雷射的臨界條件與縱向光模------------------- 3
2.2雷射特性---------------------------------- 5
2.2.1 光侷限因素--------------------------- 5
2.2.2 起始電流密度------------------------- 6
2.2.3 差額量子效率-------------------------- 6
2.3量子點的形成及其特性----------------------- 7
2.4量子點雷射基本特性------------------------- 8
2.5不同基底之模態增益分析-------------------- 9
第三章 半導體雷射製程------------------------ 18
3.1 雷射之磊晶結構-------------------------- 18
3.2量子點雷射二極體製程---------------------- 20
第四章 實驗量測結果與討論-------------------- 28
4.1基底厚度對雷射特性的影響------------------ 30
4.1.1長晶時基底的溫度對雷射特性的影響--30
4.1.2 基底厚度對起始電流的影響-------------- 31
4.1.3 基底厚度對雷射光譜的影響------------- 31
4.1.4 增大電場下光譜的變化------------------- 33
4.2不同溫度下量子點雷射特性的變化--------------- 33
4.2.1變溫L-I量測---------------------------- 34
4.2.2 變溫光譜量測------------------------- 35
4.3 不同共振腔長度時雷射特性的變化-------------- 35
4.3.1 L-I特性曲線-------------------------- 36
4.3.2 雷射光譜----------------------------- 37
4.4光激光(PL)量測------------------------------ 37
4.5 電激光(EL)量測------------------------------ 38
第五章 結論-------------------------------------- 57

參考文獻
(1)Heterosturcture lasers,Parts A, Fundamental Principles
Casey H C Jr, Panish M B etc. New York: AcademicPress,1987
(2) Waveguiding properties of heterolasers based on
InGaAs/GaAs strain quantum-well structures and
characteristics of their gain spectrum.
E V Arzhanov, A P Bogatov, V P Konyaev, O M
Nikitina, V I Shveikin quantum Electronics 24(7) 581-587
(1004)
(3) Self-Assemble InGaAs/GaAs Quantum Dots semiconductors
and semimetals Volume.60 Volume Editor MITSURU SUGAWARA
(4) Influence of growth conditions on the
photoluminescence of self-assembled InAs/GaAs quantm
dots L.Chu,M.arzberger..etc. Journal of Applied
Physics Vol.85; No.4 ;15 feb 1999
(5) Experimental studies of the multimode spectral emission
in quantum dot lasers. A. Patane, A.polimeni …etc.
Journal of Applied Physics Vol.87,No4 ;15 Feb 2000
(6) Spectral analysis of InGaAs/GaAs quantum-dot
lasers. P.M Smowton, E.L.Johnston, S.V.Dewar
etc. ; Applied Physics Letters Vol.75, No.15 ;
11.Oct.1999
(7) Emission spectra and mode structure of InAs/GaAs self-
organized quantum dot lasers. L. Harrid, J.Mowbray,
M. Hopkinson and G. Hill ..etc. Applied Physics
Letters Vol.73, No.7 ;17.Aug.1998
(8) Intensity noise in quantum-dot laser diodes.
F.Wolfl and J.F.Ryan etc ; Applied Physics
Letters ; VOLUME 78, No23
(9) Threshold Temperature Dependence of Lateral-Cavity
Quantum-Dot Lasers.Z.Zou, O.B. Shchekin, G. Park, D.
L. Huffaker, Member,IEEE, and D.G.Deppe, Senior
Member,IEEE ; IEEE PHOTONICS TECHNOLOGY
LETTERS, VOL10, NO.12 .December 1998
(10) 1.3um room-temperature GaAs-based quantum-dot laser.;
D. L. Huffaker , Z.Zou, O.B. Shchekin etc. Applied
Physics Letters Vol.73, No.18 ; 2.Nov.1998

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