|
[1]R. H. Havemann, M. K. Jain, R. S. List, A. R. Ralston, W-Y. Shih, C. Jin, M. C. Chang, E. M. Zielinski, G. A. Dixit, A. Singh, S. W. Russell, J. F. Gaynor, A. J. McKerrow, and W. W. Lee, Mater. Res. Soc. Symp. Proc., 1988, vol. 511, p.3-14. [2]L. Peters, Semiconductor International, Cover Story, p.64, Sep.1998. [3]M. Rossnegal and D. Mikalsen, “Collimated magnetron sputter deposition”, J. Vac. Sci. Technol., A-9, p.261 (1991). [4]T. Sakurai, “Closed-form expressions for interconnection delay, coupling and crosstalk in VLSI’s”, IEEE trans. Elec. Devices, 40, p.118 (1993). [5]S.-Y. Oh. et al., SRC Topic Research Conference Workshop on Low Dielectric Interlayer Dielectrics for High Performance Circuits, RPI, Troy, NY, Aug. 9-10, 1994. [6]T. S. Kuan, Dielectrics and CVD Metallization Symp., San Diego, CA, Feb. 7-8, 1994. [7]T. E. Seidel, C. H. Ting, Material Research Society Symp. Proc. vol. 381, p.3, 1995. [8]C. B. Case, C. J. Case, A. Kornblit, M. E. Mills, D. Castillo, R. Liu, Materials Research Society, vol. 443, p.177 [9]Neil H. Hendricks, Materials Research Society, vol. 443, p.3, 1997 [10]P. T. Liu, T. C. Chang, Y. L. Yang, Y. F. Cheng and S. M. Sze, IEEE Trans. on Electron Devices 47, 1733 (2000). [11]H. Treichel, G. Ruhl, P. Ansmann, R. Wuller, M. Dietlmeier, and G. Maier, Proceedings of The First International Dielectrics for VLSI/ULSI Multilevel Interconnection Conference (DUMIC), p.201, (IEEE, Santa Clara, CA. 1998) [12]P. T. Liu, T. C. Chang, Y. S. Mor and S. M. Sze, Japanese Journal of Applied Physics 38, 3482 (1999). [13]T. C. Chang, P. T. Liu, Y. J. Mei, Y. S. Mor, T. H. Perng, Y. L. Yang and S. M. Sze, J. Vac. Sci. Technol. B 17 (5), 2325 (1999). [14]A.K. Stamper, V. Mcgahay, and J.P. Hummei, DUMIC Conf., 13(1997). [15]T. C. Chang, P. T. Liu, Y. S. Mor, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, and C. Y. Chang, J. Electrochem. Soc. 146 (10) 3802 (1999). [16]P. T. Liu, T. C. Chang, H. Su, Y. S. Mor, Y. L. Yang, Henry Chung, J. Hou and S. M. Sze, J. Electrochem. Soc. 148 (2), F30 (2001). [17]J.Waterloos, H. Meynen, B. Coengrachts, T. Gao, J. Grillaert and L.Van Den hove, DUMIC Conf., 310 (1997) [18]D. K. Schroder, Semiconductor Material and Device Characterization, (Wiley-Interscience, New York,1998). [19]L. J. Chen, S. C. Tseng, S. C. Chang, and C. M. Wang, No. 97-ISMIC-107, in proceedings of the 14th International VLSI Multilevel Interconnection Conference (VMIC), p.125, Santa Clara, CA (1997). [20]J. M. Neirynck, R. J. Gutmann, and S. P. Murarka, J. Electrochem. Soc., 146, 1602 (1999). [21]T. Hara, T. Tomisawa, T. Kurosu, and T. K. Doy, J. Electrochem. Soc., 146, 2333 (1999). [22]C. L. Borst, R. J. Gutmann, W. N. Gill, No.99-IMIC-109, in proceedings of the 16th International VLSI Multilevel Interconnection Conference (VMIC), p.207, Santa Clara, CA , Sept 7-9, 1999 [23]L. Forester, D. K. Choi, and R. Hosseini, in VMIC Proceedings of the International Conference, p.482 (1995). [24]P. T. Liu, T. C. Chang, M. C. Huang, Y. L. Yang, Y. S. Mor, M. S. Tsai, H. Chung, J. Hou and S. M. Sze, Journal of The Electrochemical Society, 147 (11) 4313-4317 (2000). [25]T. C. Chang, P. T. Liu, T. M. Tsai, F. S. Yeh, T. Y. Tseng, M. S. Tsai, B. C. Chen, Y. L. Yang, and S. M. Sze, The Japan Society of Applied Physics, Vol. 40, pp.3143-3146, Part 1, No. 5A, May 2001 [26]Y. Homma, T. Furusawa, K. Kusuka, M. Nagasawa, Y. Nakamura, M. Saitou, H. Moroshima, and H. Sato, VLSI Multilevel Interconnection, Proceedings of the International Conference, IEEE, p.457 (1995). [27]B. Trednnick, J. Lee, K. Holland, and T. Bibby, No. 96-ISMIC-100P, in Proceeding of the First International Chemical Mechanical Polish (CMP) for VLSI/ULSI Multilevel Interconnection Conference, CMP-MIC, p.107, Santa Clara, CA, Feb. 22-23, 1996. [28]Y. L. Wang, C. Liu, S. T. Chang, M. S. Tsai, M. S. Feng, and W. T. Tseng, Thin Solid Films, 308-309, 550 (1997). [29]L. M. Cook, Journal of Non-Crystalline Solids 120, 152 (1990). [30]M. Tomozawa, Solid State Technology July, 169 (1997) [31]J. G. Simmons, in L. I. Maissel and R. Glang (Eds.), Handbook of Thin Film Technology, Chap. 14, p.25, McGraw-Hill, New York (1970). [32]P. Hesto, in: G. Barvotlin, A. Vapaille (Eds.), Instabilities in Silicon Devices, Ch. 5, vol. 1, p.263, North-Holland, Amsterdam (1986). [33]J. G. Simmons, in L. I. Maissel and R. Glang (Eds.), Handbook of Thin Film Technology, Ch. 14, p.28, McGraw-Hill, New York (1970). [34]S. M. Sze, Physics of Semiconductor Devices, Ch. 7, p.402, Wiley, New York (1981). [35]S. Ito, Y. Homma, E. Sasaki, S. Uchimara and H. Morishima, J. Electrochem. Soc. 137, 1212 (1990). [36]Y. Homma, T. Furusawa, H. Moroshima, and H. Sato, Solid-State Electron., 41, 1005 (1997). [37]P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih and H.D.Huang, Thin Solid Films 332, 345 (1998). [38]F. Zhang, R. W. Wake, L. Cook, and A. A. Busnaina, Abstract 470, The Electrochemical Society Meeting Abstracts, San Diego, CA, May 3-8, 1998. [39]Yoshimaru, M.; Koizumi, S.; Shimokawa, K.; Ida, J. Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International , 1997 , Page(s): 234 -241 [40]H. Sodolski, and M. Kozlowski, J. Non-Cryst. Solids 194, 241 (1996).
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