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研究生:陳坤賢
研究生(外文):Kuen-Shian Chen
論文名稱:表面處理和導電鍍膜對CRT螢光粉發光效率的影響
論文名稱(外文):Surface Treatment and Conductive Treatment to Improve Performance of CRT Phosphors
指導教授:邱碧秀
指導教授(外文):Bi-Shiou Chiou
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:164
中文關鍵詞:CRT螢光粉陰極發光發光效率
相關次數:
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本論文探討如何將CRT螢光粉應用於低壓場發射顯示器,其中將會遭遇兩個主要的問題,一個是螢光粉表面的非發光層以及螢光粉本身的高電阻率的問題。其中螢光粉的高電阻率會在表面產生charging-up現象,因此利用InCl3的水解反應產生In2O3的特性,來降低螢光粉本身的高電阻率以求達到改善其在低壓的發光特性。而螢光粉表面的非發光層,則是利用酸性濃液蝕刻螢光粉來去除,進而達到提昇螢光粉的發光效率。而經過處理後的螢光粉在鍍上ITO基板時,沉積厚度也要達到最佳化,以達到大幅改善CRT螢光粉應用於低壓場發射顯示器的發光特性。
An investigation of the CRT phosphors are applied to FED phosphors at low voltage. Two main obstacles are surface dead layer of phosphor surface and high resistivity of phosphor. The high resistivities of CRT phosphors result in charging-up on the surfaces. In this research, hydrolysis of InCl3 reacts to In2O3 is utilized to reduce high resistivities of CRT phosphors and improve the low voltage cathodoluminescent properties. The surface dead layer of phosphor is etched with an aqueous solution of acid. The deposited phosphors after the same treatment on ITO glass reach optimum deposition thickness and increase efficiency of CRT phosphors. The low-voltage cathodoluminescent characteristics are drastically improved. We also do some theoretical calculations to explain experimental results by some publishing papers.
目 錄
第一章 前言…………………………………………...……………….1
第二章 文獻整理…………………………………………………………6
2.1 ZnS:Cu,Al螢光粉………………………………..………………8
2.2 陰極發光……………………………..…………………………8
2.2.1 電子與物質的交互作用……………………………………....9
2.2.2 陰極發光強度………………………………………….…….13
2.2.3 電子穿透的現象描述………………………………….…….22
2.3 低壓螢光粉……………………………..…………………….29
2.3.1 低加速電壓下,螢光粉發光效率降低……………………..30
2.3.2 亮度飽和現象………………………………………………..30
2.3.3 螢光粉內的雜質……………………………………………..33
2.3.4 螢光粉的厚度影響…………………………………………..33
2.3.5 螢光粉在陰極發光時,所析出氣體的影響………………..33
2.3.6 螢光粉衰減現象……………………………………………..36
2.3.7 其他…………………………………………………………..40
2.4 改善螢光粉發光亮度的方法………………………………….42
2.5 電泳法鍍膜……………………………………………………..44
2.6 CIE座標………………………………………………………..48
第三章 實驗步驟………………………………………………….…..53
3.1 導電性處理…….……………………………………...…….53
3.2 表面處理…………………………...…………………………53
3.3 電泳法鍍膜……………………………………………………..58
3.4 螢光粉粉末分析……………………………………………….58
3.4.1 SEM表面分析……………………………………………..58
3.4.2 Particle size distribution 粒徑分析……………………58
3.4.3 Thermal analysis 熱分析…………………………………61
3.5 螢光粉的發光特性量測……………………………………….61
3.5.1 發光量測系統………………………………………………61
3.5.2 發光光譜量測……………………………………………....61
3.5.3 CIE色度座標量測…………………………………………61
3.5.4 亮度測量……………………………………………………61
3.5.5 Decay time 量測…………………………………………...65
第四章 結果與討論……………………………….……………..……68
4.1 電泳法鍍膜……………………………………………………..68
4.1.1 zeta potential……………………………………………….72
4.2 電子在螢光粉的穿透深度……………………………………..75
4.3 導電鍍膜處理…………………………………………………..79
4.3.1 粉末粒徑與形狀……………………………………………79
4.3.2 螢光粉之陰極發光特性……………………………………79
4.3.2.1 亮度………………………………………………79
4.3.2.2 效率………………………………………………87
4.3.2.3 發光光譜…………………………………………91
4.3.2.4 色度座標…………………………………………91
4.3.3 穩定性………………………………………………………94
4.4 表面處理……………………………………………………….94
4.4.1 粉末形狀…………………………..……………………….94
4.4.2 螢光粉之陰極發光特性…………………………...……..104
4.4.2.1 亮度…………………………………………….104
4.4.2.2 效率…………………………………………….108
4.4.2.3 膜厚與亮度…………………………………….111
4.4.2.4 發光光譜…………………………………….....114
4.4.2.5 色度座標……………………………………….114
4.4.3 穩定性…………………………………………………….130
4.5 先表面處理然後導電性處理…………………………………133
4.5.1 粉末形狀………………………………………………….133
4.5.2 螢光粉之陰極發光特性………………………………….133
4.5.2.1 亮度…………………………………………….133
4.5.2.2 效率…………………………………………….138
4.5.2.3 發光發譜……………………………………….138
4.5.2.4 CIE 色度座標…………………………………138
4.5.3 衰減機制…………………………………………………145
第五章 結論…………………………………………....………….…154
第六章 參考文獻……………………………………………………….156
第七章 附錄……………………………………………………………162
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