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研究生:趙偉清
研究生(外文):Wei-Ching Chao
論文名稱:氫化物氣相磊晶法成長氮化鎵
論文名稱(外文):The growth of GaN by hidride vapor phase epitaxy
指導教授:李威儀李威儀引用關係
指導教授(外文):Wei-I Lee
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子物理系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:106
中文關鍵詞:氮化鎵氫化物氣相磊晶法獨立式氮化鎵基板
外文關鍵詞:GaNHVPEhidride vapor phase epitaxyfree-standing
相關次數:
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本論文是利用自組的氫化物氣相磊晶機台成長單晶氮化鎵半導體材料。研究主要分為三大部分:首先是機台成長參數測定,控制溫度、壓力、載子氣體,成長速率和薄膜厚度,並且使用雙晶X-ray繞射儀、霍爾電性量測、原子力顯微鏡、光激光螢光光譜量測等儀器作材料分析,調整最佳化成長條件,發現在700 torr、1050℃、成長速率低於100 μm/hr、使用氫氣作為載子氣體可成長最好品質的氮化鎵。第二個部分,對於能夠降低缺陷的側像成長方式做研究,改變溫度、壓力、光罩圖形、載氣成長,並且用掃瞄式電子顯微鏡做成長速率以及成長面觀測,發現在低壓增強了側像成長能力,以及氫氣環境有最佳的成長選擇性,以進而調整最適當的側向成長整個過程的多段成長參數設定。最後,利用前面的實驗結果成長厚膜氮化鎵約300 μm,並且配合雷射剝離技術製作獨立式氮化鎵基板,目前所能達到的最大面積約為一吋圓左右。
In this paper, it performed GaN growth by our home-made HVPE system. The research contains three parts. The first of all is HVPE parameter setting. We controlled temperature, pressure, carrier gas, growth rate, and thickness to optimize GaN growth condition, then used X-ray diffraction, Hall measurement, Photoluminsence spectrum, atomic force microscopy, and etc to do material analysis on these GaN sample. In our experiment result showed that 700torr,1050℃,growth rate lower than 100μm/hr and hydrogen as carrier gas for GaN growth is the best condition for growing high quality single crystal GaN on sapphire. The second part applied ELOG substrate technique on our HVPE system. We change temperature, pressure, and carrier gas since growth process, and we found it can control lateral to vertical growth rate ratio and growth selectivity on GaN and SiO2. Finally we applied HVPE thick film growth and laser lift-off technique to fabricate free-standing GaN. The largest area free-standing GaN we made is about 1inch and 300μm thick.
目錄
中文摘要……………………………………………………….……….. I
英文摘要…………….………………………………………….…...…..II致謝……………………………………………………….…………….III
目錄………………………………………………………….……….…IV
表目錄…………………………………………………………………..VI
圖目錄…...………………………………………………………….….VII
第一章 導論
1.1 GaN材料發展近況……………………………………………1-1
1.2 GaN晶體成長歷史……………………………………………1-2
1.3 HVPE磊晶方法在GaN上的應用……………………………1-3
第二章 自組氫化物氣相磊晶法(HVPE)
2.1成長理論………………………………………………………..2-1
2.2 HVPE機台簡介………………………………………………..2-9
2.3成長流程簡介………………………………………………….2-11
第三章 HVPE成長GaN實驗
3.1 HCl流量調變控制成長速率實驗……………………………..3-1
3.2厚度調變成長薄膜分析……………………………………….3-10
3.3溫度調變薄膜分析…………………………………………….3-21
3.4壓力調變成長薄膜分析……………………………………….3-32
3.5不同載氣環境成長分析……………………………………….3-39
第四章 HVPE成長ELOG實驗分析
4.1 ELOG成長背景……………………………………………….4-1
4.2 HVPE成長ELOG實驗……………………………………….4-3
4.4 ELOG成長材料特性比較……………………………………..4-25
第五章 Free-standing GaN製作
5.1獨立式基板背景原理………………………………………….5-1
5.2實驗流程與觀測討論…………………………………………..5-3
第六章 結論與未來展望
6.1 結論…………………………………………………………….6-1
6.2 未來展望………………………………………………………..6-5
參考資料………………………………………………………………1
參考文獻
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