|
參考文獻 1. S. Q. Wang et al., J. of Appl. Phys., Vol. 73, No. 5, p. 2301 (1993). 2. K. Holloway et al., J. of Appl. Phys., Vol. 71, No. 11, P. 5433 (1992). 3. E. Kolawa et al., J. of Appl. Phys., Vol. 70, No. 3, p. 1369 (1991). 4. X. Sun et al., J. of Appl. Phys., Vol. 81, p. 656 (1997). 5. J. Baumann et al., Microelectronic Engineering, Vol. 37/38, p. 221 (1997). 6. H. C. Liou and J. Pretzer, Thin Solid Films, Vol. 335, p. 186 (1998). 7. D. H. Kim et al., Appl. Phys. Lett., Vol. 69, No. 27, p. 4182 (1996). 8. T. Oku et al., IEEE VLSI Multilevel Interconnect Conf. Proc., p. 182 (1995). 9. W. Wang et al., Adv. Metal and Inter. Sys. For ULSI Application, 1997. 10. K. H. Min et al., J. Vac. Sci. Technol., B, Vol. 14, p. 3263 (1996). 11. 龍文安著, “積體電路微影製程”, 高立, 台北, 民89. 12. P. Sermon, K. Beekmann and S. McClatchie, Semiconductor FABTECH, 11th edition, p. 257 (2000). 13. Andrew et al., J. Vac. Sci. Technol., B, Vol. 18(1), Jan/Feb, p. 267 (2000). 14. M. Proust et al., Microelectronic Engineering, Vol. 50, p. 369 (2000). 15. D. Popovici et al., Applied Surface Science, Vol. 126, p. 198 (1998). 16. G. Ffiese et al., Microelectronic Engineering, Vol. 37/38, p. 157 (1997). 17. K. Numajiri et al., Applied Surface Science, Vol. 100/101, p. 541 (1996). 18. T. Kodas et al., “The Chemistry of Metal CVD”, p. 253, VCH, New York, 1994. 19. J. Robert et al., Microelectronic Engineering, Vol. 37/38, p. 97 (1997). 20. C. Marcadal et al., Microelectronic Engineering, Vol. 37/38, p. 97(1997). 21. G. Herde et al., Semiconductor FABTECH, 11th Edition, p. 245 (2000). 22. R. J. Contolini et al., Solid State Technology, June, p. 155 (1997). 23. C. M. Hasennsck et al., Microelectronic Engineering, Vol. 33, p. 59 (1997). 24. B. Chin et al., Solid State Technology, July, p. 141 (1998). 25. A. Sano et al., Mat. Res. Soc. Symp. Proc., Vol. 427, p. 458 (1996). 26. M. A. Nicolt et al., Thin Solid Films, Vol. 52, p. 415 (1978). 27. M. Moussavi et al., IITC 98, IEEE, p. 295 (1998). 28. K. Abe et al., J. Vac. Sci. Technol., B, Vol. 17(4), p. 1464 (1999). 29. M. Y. Kwak et al., Thin Solid Films, Vol. 399, p. 290 (1999). 30. G. Turban et al., Microelectronic Engineering, Vol. 50, p. 509 (2000). 31. P. Motte et al., Microelectronic Engineering, Vol. 50, p. 369 (2000). 32. S. Riedel et al., Microelectronic Engineering, Vol. 55, p. 213 (2001). 33. P. Motte et al., Microelectronic Engineering, Vol. 55, p. 291 (2001). 34. S. E. Schulz et al., Microelectronic Engineering, Vol. 55, p. 45 (2001). 35. M. Fayoll et al., Microelectronic Engineering, Vol. 60, p. 119 (2002). 36. A. Alberti et al., Microelectronic Engineering, Vol. 60, p. 81 (2002). 37. S. E. Kim and C. Steinbruchel, Solid State Electronics, Vol. 43, p. 1019 (1999). 38. Q. T. Jiang et al., IEEE IITC, p. 125 (1999). 39. D. Fischer et al., Solid State Technology, Mar, p. 99 (2000). 40. D. Fischer et al., Microelectronic Engineering, Vol. 50, p. 459 (2000). 41. Y. Morand et al., Thin Solid Films, Vol. 345, p. 245 (2000). 42. G. Headt, A. Mcteer and S. Meikle, Semiconductor FABTECH, 11th edition, p. 257 (2000). 43. P. Motte et al., Microelectronic Engineering, Vol. 50, p. 487 (2000). 44. S. Bystrova, J. Holleman and P. H. Woerlee, Microelectronic Engineering, Vol. 55, p. 189 (2001). 45. Kai-Min Yin et al., Thin Solid Films, Vol. 388, p. 27 (2001). 46. Akihiko Hirata et al., J. Vac. Sci. Technol., B, Vol. 19(3), May/June, p. 788 (2001). 47. H. Wolf et al., Microelectronic Engineering, Vol. 33, p. 429 (1997). 48. I. Morey et al., Solid State Technology, June, p. 71 (1999). 49. E. Korczynski, Solid State Technology, June, p. 43 (1999). 50. K. Mikagi et al., IEDM-96, p. 365 (1996). 51. V. L. Shannon et al., Thin Solid Films, Vol. 270, p. 498 (1995). 52. P. T. Liu et al., Thin Solid Films, Vol. 332, p. 345 (1998). 53. M. J. Lobada et al., Solid State Technology, May, p. 99 (1998). 54. A. Noakes, Trikon Technical Seminar, Hsinchu, March 22rd, 2000. 55. P. Sermon et al., Semicon. Fabtech., 11th edition, p. 245 (2000). 56. R. Vrtis et al., VLSI Multilevel Interconnection Conference, p. 620 (1997). 57. S. C. sun et al., VLSI Multilevel Interconnection Conference, p. 113 (1996). 58. K. K. S. Lau et al., Proc. of Dielectrics for ULSI Multilevel Interconnect Conference, p. 11 (1999). 59. S. Lee et al., J. of Appl. Phys., Vol. 85, p. 473 (1999). 60. D. Louis et al., Microelectronic Engineering, Vol. 33, p. 429 (1997).
|