1. M. Hibbbs et al., “Evaluation of Molybdenum Silicide for Use as a 193 nm Phase-Shifting Absorber in Photomask Manufacturing”, 20th BACUS, SPIE, Vol. 4186, p. 444 (2001).
2. S. Kanai et al., “Development of a MoSi-based bi-layer HT-PSM blank for ArF Lithography”, 20th BACUS, SPIE, Vol. 4186, p. 846 (2001).
3. T. Matsuo et al., “Materials for an Attenuated Phase-Shifting Mask in 157 nm Lithography”, 20th BACUS, SPIE, Vol. 4186, p. 268 (2001).
4. T. Onodera et al., “ZrSiO, a new and robust material for attenuated phase-shift masks in ArF lithography”, 19th BACUS, SPIE, Vol. 3873, p. 337 (1999).
5. N. Fukuhara et al., “Development of ZrSiO Attenuated Phase Shift Mask for ArF Excimer Laser Lithography”, 19th BACUS, SPIE, Vol. 3873, p. 979 (1999).
6. H. Suda et al., “Development of MoSi-based halfton phase-shift blank and mask for ArF Lithography”, 20th BACUS, SPIE, Vol. 4186, p. 58 (2001).
7. N. Kachwala et al., “High transmission attenuated PSM-Benefits and Limitations through a validation study of 33﹪, 20﹪and 6﹪transmission masks”, SPIE, Vol. 4000, p. 1163 (2000).
8. T. Ii et al., “Realization of mass production for 130 nm node and application for high-transmission using ZrSi-based attenuated phase-shift mask in ArF lithography”, 20th BACUS, SPIE, Vol. 4186, p. 297 (2001).
9. G. M. Reynolds et al., “TiSi-nitride attenuating phase-shift photo mask for 193 nm lithography”, 18th BACUS, SPIE, Vol. 4186, p. 58 (1998).
10. C. M. Lin and W. A. Loong, “ TiSixNy and TiSixOyNz as Embedded Material for Attenuated Phase Shifter Mask in 193 nm ”, Microelectronic Engineering, Vol. 46, p. 93 (1999).
11. C. M. Lin and W. A. Loong et al., “TiSixOy AS AN ABSORPTIVE SHIFTER FOR EMBEDDED PHASE-SHIFTING MASK IN 248 NM AND THE MODIFICATION OF R-T METHOD FOR THE DETERMINATION OF SHIFTER’S n AND k”, Microelectronic Engineering, Vol. 41/42, p. 125 (1998).
12. C. M. Lin and W. A. Loong, “ Correlation between the Chemical Compositions and Optical Properties of AlSixNy Embedded Layer for Attenuated Phase-Shifting Mask in 193 nm and the Modification of the R-T Method for Measuring n and k ”, J. Vac. Sci. Technol., B, Vol. 18, No. 6, p.3371 (2000).
13. C. M. Lin et al., “Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm”, SPIE, Vol. 3679, p. 1153 (1999).
14. S. S. Koo et al., “Study of TiSi-nitride based attenuated phase shift mask for ArF lithography”, 19th BACUS, SPIE, Vol. 3873, p. 969 (1999).
15. T. Onodera et al., “ Investigation of attenuated phase-shifting mask material for 157-nm lithography”, SPIE, Vol. 4346, p. 61 (2001).
16. K. K. Shih and D. B. Dove, “Thin film materials for the preparation of attenuating phase shifte masks”, J. Vac. Sci. Technol., B, Vol. 12, No. 1, p.32 (1994).
17. M. Ushida et al., “Development of Deep UV MoSi-based embedded phase-shifting mask (EPSM) blanks”, 16th BACUS, SPIE, Vol. 2884, p. 58 (1996).
18. Carcia et al., “ Materials Screening for Attenuating Embedded Phase Shift Photoblanks for DUV and 193 nm Photolithography ”, 16th BACUS, SPIE, Vol. 2884, p. 255 (1996).
19. Y. Saito et al., “Attenuated Phase Shifte Mask Blanks with Oxide or Oxi-nitride of Cr or MoSi Absorptive Shifter”, SPIE, Vol. 2254, p. 60 (1994).
20. Y. Tokoro et al., “Attenuated Phase Shifting Mask Blanks for Deep Ultra Violet”, 14th BACUS, SPIE, Vol. 2322, p. 387 (1994).
21. B. W. Smith et al., Plasma reactive ion etching of 193 nm attenuated phase shift mask materials”, J. Vac. Sci. Technol., B, Vol. 15, No. 6, p.2259 (1997).
22. D. L. White et al., “Phase-mask effects by dark-field lithography”, SPIE, Vol. 4000, p. 366 (2000).
23. D. L. White et al., “Lithographic projectors with dark-field illumination”, J. Vac. Sci. Technol., B, Vol. 17, No. 6, p.3301 (1999).
24. T. Yamamoto et al., “Impact of Alternating Phase Shift Mask Quality on 100 nm Gate Lithography”, 20th BACUS, SPIE, Vol. 4186, p. 423 (2001).
25. S. S. Koo et al., “Study on the Potentialities of sub-100 nm Optical Lithography of Alternating and Phase-edge Phase Shift Mask for ArF Lithography”, 20th BACUS, SPIE, Vol. 4186, p. 346 (2001).
26. Y. J. Chan and C. S. Su, “Reactive-ion etching of WSix in CF4+O2 and the associated damage in GaAs”, J. Vac. Sci. Technol., B, Vol. 14, No. 4, p.2550 (1996).
27. B. W. Smith et al., “Development and characterization of nitride and oxide based composite materials for sub 0.18 μm attenuated phase shift masking”, Microelectronic Engineering, Vol. 35, p. 201 (1997).
28. I. Kagami et al., “Fabrication process of Cr-based attenuated phase shift masks for KrF excimer laser lithography”, 19th BACUS, SPIE, Vol. 3873, p. 953 (1999).
29. R. Jonckheere et al., “Molybdenum silicide based attenuated phase-shift masks”, J. Vac. Sci. Technol., B, Vol. 12, No. 6, p.3765 (1994).
30. Y. Jin et al., “0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron resonance ion stream etching with SF6-CF4-SiF4-O2”, J. Vac. Sci. Technol., B, Vol. 15, No. 6, p.2639 (1997).
31. C. M. Lin and W. A. Loong et al., “The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm”, Microelectronic Engineering, Vol. 57/58, p. 481 (2001).
32. D. L. Windt et al., “Amorphous carbon films for use as both variable-transmission apertures and attenuated phase shift masks for deep ultraviolet lithography”, J. Vac. Sci. Technol., B, Vol. 17, No. 3, p.2639 (1999).
33. H. Mohri et al., “Chromium-based attenuated phase shifter for DUV exposure”, SPIE, Vol. 2322, p. 288 (1994).
34. M. Nakajima et al., “Attenuated phase-shift masks with a single-layer absorptive shifter of CrO, CrON, MoSiO and MoSiON film”, SPIE, Vol. 2197, p. 111 (1994).
35. H. I. Smith et al., “Spatial period division-A new technique for exposing submicrometer-linewidth periodic and quaslperlodic patterns”, J. Vac. Sci. Technol., B, Vol. 16, No. 6, p.1949 (1979).
36. B. J. Lin, “PHASE-SHIFTING AND OTHER CHALLENGES IN OPTICAL MASK TECHNOLOGY”, SPIE, Vol. 1496, p. 54 (1990).
37. Z. Cui and P. D. Prewett, “Characterization of Embedded Phase Shift Masks by Relfectance-Transmittance Measurement”, Microelectronic Engineering, Vol. 30, p. 145 (1996).
38. T. C. Paulick, “Inversion of normal-incidence (R, T) measurements to obtain n+ik for thin films”, Applied Optics, Vol. 25, No. 4, p. 562 (1986).
39. A. Hjortsberg, “Determination of optical constants of absorbing materials using transmission and reflection of thin films on partially metallized substrates: analysis of the new (T, Rm) technique”, Applied Optics, Vol. 20, No. 7, p. 1254 (1981).
40. J. E. Nestell and R. W. Christy, “Derivation of Optical Constants of Metals from Thin-Film Mesurements at Oblique Incidence”, Applied Optics, Vol. 11, No. 3, p. 643 (1972).
41. B. W. Smith et al., “Attenuated phase shift mask materials for 248- and 193-nm lithography”, MICROLITHOGRAPHY WORLD, p. 7 (1997).
42. B. W. Smith et al., “Attenuated phase shift mask materials for 248 and 193 nm lithography”, J. Vac. Sci. Technol., B, Vol. 14, No. 6, p.3719 (1996).
43. F. D. Lai and L. A. Wang, “Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength”, Microelectronic Engineering, Vol. 57/58, p. 439 (2001).
44. F. D. Lai and L. A. Wang, “Optical-constant tunable (ZrO2)x(Cr2O3)y(Al2O3)1-x-y Optical superlattices for attenuated phase shift mask in ArF lithography”, J. Vac. Sci. Technol., B, Vol. 19, No. 6, p.2617 (2001).
45. K. Kikuchi et al., “Optimization method of the double exposure technique with alt-PSMs for below a 0.13 μm node”, J. Vac. Sci. Technol., B, Vol. 19, No. 6, p.2371 (2001).
46. C. M. Lin and W. A. Loong, “AlSiNx as an Embedded Layer for Attenuated phase-shifting mask in 193 nm and the Utilization of a Chemically Amplified Negative Resist NEB-22 for Maskmaking”, Microelectronic Engineering, Vol. 53, p. 133 (2000).
47. C. Pierrat et al., “Dry etched molybdenum silicide photomasks for submicron integrated circuit fabrication”, J. Vac. Sci. Technol., B, Vol. 9, No. 6, p.3132 (1991).
48. C. Chu et al., “Effect of fluorocarbon polymer deposition on the selective etching of SiO2/Photoresist in high density plasma”, J. Vac. Sci. Technol., B, Vol. 18, No. 6, p.2763 (2000).
49.Y. Yamada et al., “ACTUAL USE OF PHASE SHIFT MASK”, 15th BACUS, SPIE, Vol. 2621, p. 266 (1995).
50.B. Kim, H. J. Choi and B. T. Lee, “Surface roughness of silicon carbide etched in a C2F6/O2 inductively coupled plasma”, J. Vac. Sci. Technol., A, Vol. 20, No. 2, p.424 (2002).
51.I. Umezu et al., “Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas”, J. Vac. Sci. Technol., A, Vol. 20, No. 1, p.30 (2002).
52. J. F. Moulder et al., “Handbook of X-ray Photoelectron Spectroscopy”, Physical Electronics Inc., (1995).
53.龍文安,“積體電路微影製程”,高立,台北,民國87年。
54.黃振昌,“X光光電子能譜儀”,表面分析儀器,國科會精儀中心,頁5,民國87年。
55.林政旻,“193 nm微影用正規與高透射率嵌附層材料之探討及減光型相移圖罩應用之模擬”,國立交通大學博士論文,民國90年。56.陳宗逸,“鉭矽氮類嵌附式減光型相移圖罩之研製與模擬”,國立交通大學碩士論文,民國89年。57.曾金池,“IC光罩應用介紹及其未來發展”,電子與材料雜誌,第11期,頁81,民國90年。
58.陳碧灣,“先進光罩製作技術的挑戰”,電子與材料雜誌,第11期,頁77,民國90年。