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研究生:李亞儒
研究生(外文):Ya-Ju Lee
論文名稱:氧化型與佈植型之垂直共振腔面射型雷射之特性研究
論文名稱(外文):Study of 850 nm Oxidized and Implanted Vertical Cavity Surface Emitting Lasers
指導教授:王 興 宗
指導教授(外文):S. C. Wang
學位類別:碩士
校院名稱:國立交通大學
系所名稱:光電工程所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:73
中文關鍵詞:面射型雷射氧化型電流侷限結構質子佈植型電流侷限結構
外文關鍵詞:VCSELoxide-confinementproton-implantation
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本論文主要是研究 GaAs垂直共振腔面射型雷射的溫度特性、近場分析、高頻調變以及可靠度分析。用於此研究的雷射有兩種不同的結構:一是氧化型電流侷限結構,一是質子佈植型電流侷限結構。
由溫度相關雷射輸出功率對注入電流的關係,我們發現gain off-set effect,這是只會發生在面射型雷射的獨特特性。由此看來,面射型雷射的特性表現與雷射的操作條件有著強烈的相關性。 由近場光學的結果來分析,氧化型電流侷限結構比質子佈植型電流侷限結構有較好的電性與光學特性。我們發現雷射的調變能力會受到寄生阻抗效應 (parasitic impedance effect) 的影響而且我們由relaxation frequency計算出光子在氧化型電流侷限結構與質子佈植型電流侷限結構的生命週期分別為5.8 ps 與6.2 ps。最後,我們也設計了雷射可靠度實驗,並且分析雷射損壞 (degradation) 可能的物理機制

In this thesis, we investigated the characteristics of GaAs based vertical cavity surface emitting lasers (VCSELs) including temperature dependent light verse power (L-I) curves, near-field profiles, high speed modulation, reliability test and failure analysis. We analyze two types of lasers structures experimentally. One is oxide-confinement and the other is proton-implantation.
The temperature dependent L-I curves shows the gain off-set effect, which is the unique characteristic of VCSELs. As result, the performance of VCSELs strongly depends on the operating condition. From the near-field profiles, oxide-confined VCSEL has better current and optical confinements than proton-implanted VCSEL. The measured modulation response showed that the relaxation frequency of laser is affected by the parasitic impedance effect and the photon lifetime of oxide-confined and proton-implanted VCSELs are estimated from the modulation response to be about 5.8 ps and 6.2 ps respectively. We also conducted a constant current experiment of the reliability test, and analyzed the possible failure mechanisms of the degradation of lasers.

Contents
Abstract (in Chinese)……………………………………………………ⅰ
Abstract (in English) ……………………………………………………ⅱ
Acknowledgement………………………………………………………ⅲ
Contents…………………………………………………………………ⅳ
Figure Contents…………………………………………………………ⅵ
Table Contents…………………………………………………………..ⅹ
Chapter 1 Introduction…………………………………………………1
1-1 Background ……………………………………………………….1
1-2 Comparison of EEL and VCSEL………………………………….2
1-3 Research objectives………………………………………………..4
Chapter2 VCSEL Fundamentals and Design Consideration………………………………………....6
2-1 Typical VCSEL device configurations……………………………….6
2-1-1 Etched Mesa…………………………………………………..6
2-1-2 Proton Implantation…………………………………………..7
2-1-3 Dielectric Aperture …………………………………………...7
2-1-4 Buried Heterostructure ……………………………………….7
2-2 Basic principle of a VCSEL………………………………………….9
2-3Analysis and design of Distributed Bragg Reflector (DBR)……………………………………………………………….14
Chapter 3 Characteristics of 850 nm GaAs Based VCSEL.............21
3-1 Device configuration and experimental setup……………………....21
3-2 Thermal dependence on 850 nm VCSEL…………………27
3-3 Performance comparison of oxide and implant type VCSELs
3-3-1 Temperature dependent light-power verse current curves…..34
3-3-2 Near field profiles…………………………………………...40
3-3-3 High-speed modulation……………………………………...47
Chapter 4 Reliability test and Failure Analysis……………………...55
4-1 Characteristic comparison after aging……………………………...56
Chapter 5 Conclusion………………………………………………….67
Appendix A…………………………………………………………......69
Reference…………………………………………………………….....71

Reference
[1] Wenbin Jiang, Norton LJ, Kiely P, Schwartz DB, Gable B, Lebby M, Raskin G. Optical Engineering, vol.37, no.12, Dec. 1998, pp.3113-18.
[2] Shinada S, Koyama F, Nishiyama N, Arai M, Iga K. IEEE Journal of Selected Topics in Quantum Electronics, vol.7, no.2, March-April 2001, pp.365-70.
[3] H.Soda, K.Iga, C. Kitahara and Y. Suematsu, Jpn. J. Appl. Phys., vol.18, no.12, pp2329-2330,1979.
[4] T.Sakaguchi, F. Koyama, and K. Iga, Electron. Letter, vol. 24, no. 15 pp928-pp929,1989.
[5] Jeongyong Kim,David E. Pride, Jpseph T. Boyd, and Howard E. Jackson, Appl. Phys. Lett. vol.72, no.24, pp3112-pp3115, 1998
[6] G. C. Wilson, D. M. Kuchta, J. D. Walker, and J. S. Smith, Appl. Phys. Lett. vol.64, pp542-pp545, 1994
[7] N. K. Dutta, L. W. Tu, G. Hasnain, G. Zydzik, Y. H. Wang, and A.Y. Cho, Electronics Letters, vol. 27, no. 3, pp208-pp210,1991
[8] K. D. Choquette, R. P. Schneider Jr., K. L. Lear, and K. M. Geib, Electronics Letters, vol. 30, no. 3, pp2043-pp2044,1994
[9] K. L. Lear, K.D. Choquette, R. P. Schneider Jr., and S. P. Kilcoyne, Appl. Phys. Lett., vol. 66, pp.2616-pp2618, 1995
[10] D.E.Aspnes, S. M. Kelso, R. A. Logan, R. Bhat, J. Appl. Phys.vol.60, pp754, 1986
[11] J.Piprek, H.Wenzel and G.Sztefka,IEEE Photon. Technol. Lett. , vol. 6, no. 2, pp139-142, Feb (1994).
[12] M.A.Afromowitz, “Refractive Index of Ga1-xAlxAs,” Solid State Comm.15,59 (1974)
[13] J.Talhader and J. S. Smith, Appl. Phys. Lett. vol. 66, no. 3, 1995.
[14]Li-Hong Laih, Lih-Wen Laih, Wen-Jeng Ho, Hsing-Yu Chen, Meng-Chyi Wu, Yuan-Long Hung, and Guo-Chung Chi, MRS. 2000.
[15] Kent D. Choquette, K. L. Lear, R. P. Schneider, Jr., and K.M. Geib. Appl. Phys. Lett. vol.66, pp3413-pp3415, 1995.
[16] G. C. Wilson, D. M. Kuchta, J. D. Walker, and J. S. Smith, Appl. Phys. Lett. vol.64, no.5, pp542-pp544, 1994.
[17] Prince, F. C, Patel, N. R., Kasemset, D., and Hong, C. S. Electro. Lett., vol.19 pp. 435-pp. 437, 1983.
[18] Willardson, R. K., and Beer, A. C. semiconductors and semimetals, vol. 2, p52, (Academic Press, New York,1966)
[19] J. Kim, J. T. Boyd, and Howard E. Jackson, Appl. Phys. Lett. vol.76, no.5, pp526 - pp528, 2000.
[20] Jeongyong Kim, David E. Pride, Joseph T. Boyd, and Howard E. Jackson, Appl. Phys. Lett. vol.72, no.24, 1998
[21] J. L. Jeweel, Y. H. Lee, A. Scherer, S. L. McCall, N. A. Olsson, J. P. Harbison, and L. T. Florez, Opt. Eng., vol. 29, no. 3, pp210-pp214, 1990
[22] G. Hasnain, K. Tai, J. D Wynn, Y. H. Wang, R. J. Fischer, B. E. Weir, and A.Y. Cho, Appl. Phys. Lett., vol.59, no.10, pp1147-pp1149, 1991
[23] T. G. Dziura, Y. J. Yang, R. Fernadez, T. Bardin, and S. C. Wang, IEEE. Phot. Tech. Lett., Nov. 1993
[24] Kressel, H., and J. K. Butler, Semiconductor Laser and Heterojunction LEDs, Academic Press, New York, 1977.
[25] R. G. Waters, Prog. Quantum Electron., vol. 15, pp153-pp174, 1991
[26] M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs. MA: Artech House, 1991
[27] P. G. Eliseev, Reliability Problems of Semiconductor Lasers, M. A. Man’ko, Ed. New Yotk: Nova Science Publishers, 1991
[28] P. M. Petroff, Semiconductors and Semimetals, vol.22A R. K. Willarsdon and A. C. Beer, Eda. New York: Academic, 1985, pp.379-403
[29] M. H. MacDougal, H. Zhao, P. D. Dapkus, M. Ziari, and W. H. Strier, Electron. Lett., vol. 30, pp.1147-pp1149, 1994
[30] J. A. Kash, B. P. Schneider, Jr., K. D. Choquette, S. P. Kilcoyne, J. J. Figiel, and Figiel, and J. C. Zolper, Photon. Tech. Lett., vol. 6, pp.1053-pp1055, 1994

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