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研究生:林素圓
研究生(外文):Su-Yuan Lin
論文名稱:利用飽和吸收鏡之混成式鎖模半導體雷射之行為研究
論文名稱(外文):Observation of Hybrid-Mode-Locking behavior in an external-cavity Semiconductor Laser with a Saturable Bragg Reflector
指導教授:潘犀靈
指導教授(外文):Ci-Ling Pan
學位類別:碩士
校院名稱:國立交通大學
系所名稱:光電工程所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:65
中文關鍵詞:混成鎖模飽和吸收體飽和吸收鏡外腔
外文關鍵詞:hybrid mode lockingsaturable absorberSBRexternal-cavity
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利用飽和吸收鏡(SBR)作為被動元件,我們觀察到了外腔半導體雷射混成式鎖模的現象,且分別對飽和吸收鏡做砷離子佈值前後的行為作進一步探討。同時,為了要比較被動元件所產生的效應,我們利用相同的腔,將飽和吸收鏡以銀鏡取代形成主動鎖模。在使用經離子佈值的飽和吸收鏡的系統下,可得到最短脈寬15.6皮秒,尖峰功率為2.4瓦;光譜半高寬為3.4奈米,所對應的時間-頻寬乘積為22.6。若能使脈衝再經色散補償或對飽和吸收鏡做更適當的設計,必能獲得更短的脈衝。

Hybrid mode locking behavior is observed in an external cavity semiconductor laser with as grown and arsenic-ion-implanted Saturable Bragg Reflectors (SBR). For comparison, active mode locking in the same cavity but a silver mirror replacing the SBR was also investigated. Pulse width as short as 15.6 psec with a peak power of 2.4 W was obtained with the implanted SBR. The spectral bandwidth is 3.4 nm. The corresponding time-bandwidth product is 22.6. Still shorter pulses should be possible with intra-cavity dispersion compression and optimum design of the SBR.

Chapter I Introduction
1.1 Introduction
1.2 Introduction of hybrid mode locking pulse lasers
1.3 Motivation
1.4 Outline
Chapter II Mode Locking of Lasers : Basic Principles and Mode Locking Mechanisms
2.1 Gain coefficient of a slow saturable absorber laser cavity
2.2 Gain coefficient in a passive mode locking semiconductor laser cavity
2.3 Active mode locking
2.4 Active mode locking of a semiconductor laser in an external cavity
2.5 Passive fast saturable absorber mode locking
2.6 Slow saturable absorber mode locking
2.7 Passive mode locking in semiconductor laser structures
2.8 Saturable Bragg Reflector
2.9 SBR carrier lifetime reducing and measurement
Chapter III Experimental Methods
3.1 Laser configuration
3.2 Diagnostic techniques
3.3 Preparative experiments
3.3.1 Limit of the detection system
3.3.2 Reflectivity and transmittance of the plate and PBS combination
3.3.3 Autocorrelator
Chapter IV Hybrid Mode-Locked Semiconductor Laser with a SBR: Results and Discussions
4.1 Introduction
4.2 Active mode locking semiconductor laser system
4.2.1 Mode locking with an output coupler cavity
4.2.2 Mode locking with a focusing cavity
4.3 Hybrid mode locking semiconductor laser system
4.3.1 Hybrid mode locking pulse
4.3.2 Hybrid mode locking with a Arsenic-ion-bombarded SBR
Chapter V Conclusions and future works
5.1 Conclusions
5.2 Future works

References:
[1]. J. P. Van der Ziel, W. T. Tsang, R. A. Logan, and R. M. Mikulyak, W. M. Augustyniak, “Subpicosecond pulses from passively mode-locked GaAs buried optical guide semiconductor lasers “, Appl. Phys. Lett. 39, pp.525-527, Oct. 1981
[2]. H.Yokoyama, H. Ito, and H. Inaba, “Generation of subpicosecond coherent optical pulses by passive mode locking of an AlGaAs diode laser “, Appl. Phys. Lett. 40, pp.105-107, Jan. 1982
[3]. J.E. Bowers, P.A. Morton, A. Mar, and S.W. Corzine, “Actively mode-locked semiconductor lasers”, IEEE J.Quant. Electr. 25, pp.1426-1439, June 1989
[4]. N. Stelmakh , and J. M. Lourtioz,” 230 fs, 25 W pulses from conventional mode-locked laser diodes with saturable absorber created by ion implantation”, Electron. Lett. 29, pp.160-162, Jan.1993
[5]. D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, and W. Wiegmann, “ Large room-temperature optical nonlinearity in GaAs/GaAlAs multiple quantum well structures, “ Appl. Phys. Lett. 41, pp. 679-681, 1982
[6]. D. S. Chemla, and D. A. B. Miller, “Room temperature excitonic nonlinear absorption and refraction in GaAs/GaAlAs multiple quantum well structures, “ IEEE J. Quantum Electron. QE-20, pp.265-275, 1984
[7]. D. S. Chemla, and D. A. B. Miller, “Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures,” J. Opt. Soc. Am. B 2, pp.1155-1173, 1985
[8]. Hermann A. Haus, “Theory of mode locking with a fast saturable absorber,” J. Appl. Phys. 46, pp.3049-3058, July 1975
[9]. Hermann A. Haus, “Theory of mode locking with a slow saturable absorber,” IEEE J. Quantum Electron. QE-11, pp.736-746, Sep. 1975
[10]. P. W. Smith, Y. Silberberg, and D.A. Miller, “Mode locking of semiconductor diode lasers using saturable excitonic nonlinearities,” J. Opt. Soc. Am. B 2, pp.1228-1236, July 1985
[11]. L. R. Brovelli, I. D. Jung, D. Kopf, M. Kamp, M. Moser, F.X. Kartner, and U. Keller, ‘‘Self-starting soliton mode-lockedTi:sapphire laser using a thin semiconductor satu-rableabsorber,’’, Electron. Lett. 31, pp. 287—289 , 1995.
[12]. S. Tusda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E.Cunningham, ‘‘Mode-locking ultrafast solid-state laserswith saturable Bragg reflectors,’’ IEEE J. Sel. Top. Quan-tumElectron. 2, pp.454—464 , 1996.
[13]. S. Tusda, W. H. Knox, E. A. de Souza, W. Y. Jan, and J. E.Cunningham, ‘‘Low-loss intracavity AlAs/AlGaAs saturableBragg reflector for femtosecond mode locking in solid-statelasers,’’ Opt. Lett., 20, pp. 1406—1408, 1996
[14]. B. C. Collings, J. B. Stark, S. Tsuda, W. H. Knox, J. E. Cun-ningham,W. Y. Jan, and R. Pathak, ‘‘Saturable Bragg re-flectorself-starting passive mode locking of a Cr 41 : YAG la-serpumped with a diode-pumped Nd:YVO4 laser,’’ Opt.Lett., 21, pp.1171—1173 , 1996.
[15]. S. Tusda, W. H. Knox, and S. T. Cundiff, ‘‘High efficiencydiode pumping of a saturable Bragg reflector-mode-lockedCr:LiSAF femtosecond laser,’’ Appl. Phys. Lett. 69, pp.1538—1540, 1996.
[16]. W. H. Loh, D. Atkinson, P. R. Morkel, M. Hopkinson, A.Rivers, A. J. Seeds, and D. N. Payne, ‘‘Passive mode-lockedEr31 fiber laser using a semiconductor nonlinear mirror,’’IEEE Photonics Technol. Lett. 5,pp.35—37 , 1993.
[17]. L.E.Adams, E.S.Kintzer, M.Ramaswamy, J.G.Fujimoto, U.Keller, and M.T.Asom, “Mode locking of a broad-area semiconductor laser with a multiple-quantum-well saturable absorber”, Opt.Lett. 18, pp.1940-1942, Nov. 1993
[18]. J.L.Shen, T.Jung, S.Murthy,T.Chau, M.C.Wu,D.Tong, Y.H.Lo,C.L.Chua,and Z.H.Zhu,”Mode locking of external-cavity semiconductor lasers with saturable Bragg reflector”, J.Opt.Soc.Am.B 16, pp.1064-1067, July 1999
[19]. S.Hoogland, S.Dhanjal,A.C.Tropper, J.S.Roberts, R.Jaring, R.Paschotta, F.Morier-Genoud and U.Keller, ”Passively mode-locked diode-pumped surface-emitting semiconductor laser”, IEEE J. Quantum Electron. 12, pp.1135-1137, Sep. 2000
[20]. Y. Silberberg, P. W. Smith, D.J.Eilenberger, and D.A. Miller, “Passive mode locking of a semiconductor diode laser” Opt.Lett. 9, pp.507-509, 1984
[21]. P. Delfyett, L. Florez, N. Stoffel, T. Gmitter, N. Andreadakis, Y. Silberberg, J. Heritage, and G. Alphonse, “High-power ultrafast lasr diodes” , IEEE J. Quantum Electron. QE-28, pp. 2203-2219, Oct. 1992
[22]. S. Gee, A. Alphonse, J. Connolly, C. Barty, and P. Delfyett, “Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers”, IEEE J. Quantum Electron 36, pp.1035-1040, Sep. 2000
[23]. J.C.Chen, H.A.Haus, and E.P.Ippen, “Stability of lasers mode locked by two saturable absorbers,” IEEE J.QE, 29, pp.1228-1232, 1993
[24]. G.P.Agrawal, Nonlinear Fiber Optics, Academic Press Inc., 1989
[25]. G.P.Agrawal and N.A.Olsson, “Amplification and compression of weak picosecond optical pulses by using semiconductor-laser amplifiers,” Opt.Lett., 14, pp.500-502, 1989
[26]. Hermann A. Haus, Waves and fields in optoelectronics, Prentice-Hall,1984
[27]. H.A.Haus, “Mode-locking of lasers”, IEEE J. selected topics in Quantum electron. 6, pp.1173-1185, Nov. 2000
[28]. P.W. Smith, M.A. Duguay, and E.P. Ippen, Progress in Quantum Electronics 3, pp.107-229, 1974
[29]. G.H.C. New, IEEE J. Wuantum Electron. QE-11, pp.736-746, 1975
[30]. H.A. Haus and Y. Silberberg,”Theory of mode locking of a laser diode with a multiple-quantum-well structire”, J.Opt. Soc. Am. B2, pp.1237-1243, 1985
[31]. Kim, B.G., Garmire, E., Hummel, S.G., and Dapkus, P.S. “Nonlinear Bragg Reflector Based on Saturable Absorption,” Appl. Phys. Lett. 54, pp.1095-209, 1989
[32]. Afromowitz, M.A “Refractive Index of Ga1-xAlxAs,” Solid-State Commun. 15, pp.59-63, 1974
[33]. W.Lenth, “Picosecond gain measurements in a GaAlAs diode laser,” Opt. Lett. 9, pp.396-398, 1984
[34]. P.J. Delfyett, A.Dienes, J.P.Heritage, M.Y.Hong, and Y.H.Chang, ” Femtosecond Hybrid Mode-Locked Semiconductor Laser and Amplifier Dynamics“, Appl.Phys.B, 58, pp.183-195 ,1994
[35]. J.AuYeung, “Theory of active mode locking of a laser diode in an external cavity”, Tech. Dig. 11th Int. Quantum Electron. Conf., AA11, June 1980
[36]. R.H. Pantell and H.E. Puthoff, Fundamentals of Quantum Electronics, New York: Wiley,1969

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