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研究生:童樹進
研究生(外文):Tung Su-Ching
論文名稱:以N自由基成長氮化矽閘極製程
論文名稱(外文):The growth of the high K SiN Gate Dielectrics through N Radical Process
指導教授:羅正忠羅正忠引用關係林進燈林進燈引用關係
指導教授(外文):Lou Jen-chungLin Chin-Teng
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電資學院學程碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:60
中文關鍵詞:氮化矽閘極
外文關鍵詞:Silicon NitrideGate Dielectrics
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本篇論文主要是探討用電漿氮化技術長一層超薄的氮化矽,並用它來作奈米技術閘極應用的可能性。先用Microwave解離N2、形成氮自由基;再讓氮自由基滲入矽晶圓表面,形成一層超薄的氮化矽〈約21~23埃〉。
共使用幾個溫度、時間等不同條件,共長3批晶圓,分析他們的厚度、標準差及單片晶圓內,及晶圓對晶圓的厚度均勻性比較。最後,再加一層5000埃厚的鋁,去做電容─電壓及電流─電壓特性分析。

This study is mainly to investigate the possibility of using nitrogen Radical to grow an ultra-thin H-K SixNy film as Gate Dielectric for under 0.1-micron generation application in semiconductor.
Using the microwave power to excite N2 and form the plasma and then, allow nitrogen radical to incorporate with silicon. It will incorporate firstly with the silicon atoms from the surface of the processed wafer to form the SixNy. It’s discovered that the SixNy have strong self-limitation for their film growth. Finally we successfully grew the films which thicknesses were 21~ 23 angstroms in the Applied Materials RTP Chamber combined with microwave source.
Several different process conditions were used to deposit 3 batches of wafers and then, their thickness, standard deviation, within-wafer and wafer-to-wafer uniformity were compared. At last, a metal layer (5000 angstroms Al) was added in order to measure the C-V and I-V characteristics.

Content
Chinese abstract …………………………………………… i
English abstract …………………………………………… ii
Appreciation …………………………………………… iii
Content ……………………………………………… iv
Table content ………………………………………………… v
Figure content ……………………………………………… vi
Symbol explanation ……………………………………… ix
Chapter 1 Introduction and research motive…………… 1
1.1 Introduction…………………………………………… 1
1.2 Research motive ……………………………………… 2
Chapter 2 Experiment method and process tool introduction. ………………………………………………………………………… 3
2.1 Experiment method and steps..…………………………… 3
2.2 AMAT Centura 5200 RTP chamber introduction …………5
2.3 Microwave generator and assembly ………………………11
Chapter 3 Experiment result and discussion …………… 13
3.1 Recipes and process conditions ………………………… 13
3.2 Within wafer thickness/uniformity analysis …………14
3.3 Wafer-to-wafer average thickness/uniformity
Analysis …………………………………………………………24
3.4 Relationship among process deposition time,
thickness and uniformity ………………………… 29
3.5 C-V and I-V characteristics data ……………………… 31
3.6 Flat-Band Capacitance Calculation……………………… 39
Chapter 4 Conclusion ………………………………………… 41
4.1 The desired characteristics of gate dielectric…… 41
4.2 Result conclusion ………………………………………… 42
Reference …………………………………………………………… 45
Vita …………………………………………………………………… 47

Reference
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4. H. Fukuda et al., Novel N2O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films IEEE Elec. Dev. Lett. 12, p587 (1991)
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6. Z.-Q. Yao et al., The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing, IEEE Elec. Dev. Lett. 15, p.516 (1994)
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16. Nil
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20. Applied Materials, RTP Centura chamber Manual, AMAT, California, p.2-30~2-33 (April 1996)
21. Applied Materials, RTP Centura chamber Manual, AMAT, California, p.2-27~2-29 (April 1996)
22. Applied Materials, RTN hardware Manual, AMAT, California, (2001)
23. S. Wolf, Silicon Processing for the VLSI Era Volume 3-The Submicon MOSFET, LATTICE P PRESS, p423~438. (1995)
24. S. Wolf, Silicon Processing for the VLSI Era Volume 3-The Submicon MOSFET, LATTICE P PRESS, P.421~426. (1995)
25. Applied Materials, SINGEN Centura Process Manual, AMAT, California, p3-1 ( Oct, 1999)
26. Applied Material, Diffusion Seminar Reference, AMAT, California, p.72~73 (April 29,2002)
27. Takashi Hori, Gate Dielectrics and MOS ULSIs Principles, Technologies, and Applications, Springer, Berlin, P.23~31 (1997)
28. Donald A. Neamen, Semiconductor Physics And Devices Basic Principles, Richard D. Irwin Inc., U.S.A., p.512~517 (1992)

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