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研究生:吳承翰
研究生(外文):cheng-han Wu
論文名稱:無機奈米粒子對於有機光阻修飾上之應用
論文名稱(外文):The modification of the organic resist after incorperate inorganic nano particles
指導教授:周正堂周正堂引用關係
指導教授(外文):C-T Chou
學位類別:碩士
校院名稱:國立中央大學
系所名稱:化學工程與材料工程研究所
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:103
中文關鍵詞:奈米微影電子束
外文關鍵詞:nano:lithography:E-beam
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電子束微影系統是近年來積極發展的先進微影技術之一,在本次研究中,首先定義出新正型光阻劑(DSE-1010)在電子束直寫系統的最佳製程條件,諸如曝光劑量為7.38μC/cm2 (for 200nm Trench),軟烤最佳條件為95℃/120sec與曝後烤最佳條件為115℃/120sec。之後探討在Class 10 級無塵室環境下軟烤及硬烤後時間延遲對密集溝溝寬變化的影響,及在顯影過程中所造成密集溝與孤立溝溝寬誤差的原因,並且對在高劑量下,光阻所展現出來的負型光阻性質,以傅立葉轉換紅外線光譜儀探討其化學結構之改變。接著評估是否可以使用熱流的方法以期使此新電子束光阻能有更小之解析能力,影響熱流的參數為熱流烘烤溫度、烘烤時間以及圖案的排列密度,最後在驗證新正型光阻劑(DSE-1010)的抗蝕刻性質,在做完熱流製程後,仍有能力將圖形轉移至晶圓上。
有感於光阻劑解析能力通常因阻劑厚度減少而變高,所以在越微小之積體電路圖形往往會使用越薄之阻劑厚度,但是因阻劑厚度不夠,而使得在圖形轉移時則會產生過蝕刻(over etching)的情形,如在轉移零層光罩之圖形時,往往使用硬罩膜(hard mask)來克服阻劑厚度不足之問題,在之後的實驗中,嘗試在光阻內加入如C60奈米粒子以解決圖形轉移時因厚度不足而產生抗蝕刻方面之問題,並以TEM圖形解釋抗蝕刻力增加之原因,並將經過修飾過之光阻劑在微影特性上重新定義出最佳之製程條件,結果其對比度增加,並且保有原本之微影解析能力,在抗蝕刻能力方面,也有相當程度的提升。


ABSTRACT
In this paper, we characterize DES-1010 E-Beam resist for high-resolution electron beam lithography from low to high dose energy. Results indicate the DSE-1010 is very high sensitive for high throughput E-Beam lithography applications. In general, at optimum condition, the trench-width can be easily down to 80 nm. When the dose increased, the character of DES-1010 had been changed from positive to negative, the change of chemical structure was observed by FTIR. It could get 500 nm trench also. Many factors influence performance of resists such as soft bake, post exposure bake, and exposure dose, which are discussed and optimize.


摘要 …………………………………………………………………………………Ⅰ
謝誌 …………………………………………………………………………………Ⅱ
總目錄 ……………………………………………………………………………....Ⅲ
表目錄 …………………………………………………………………………..… .Ⅶ
圖目錄 …………………………………………………………………………….. Ⅷ
第一章 緒論………………………………………………………………………….1
1.1半導體產業現況及發展………..…………………………………………………1
1.2 電子束光阻劑線寬變化之討論.............................................................................1
1.3熱流製程於電子束微影製程之應用……………………………………………..2
1.4奈米粒子對光阻劑修飾上的應用………………………………………………..3
1.5 論文架構………………………………………………………………………….3
第二章文獻回顧…. ………………………………………………………………….6
2.1微影製程技術進展……………………………………………...……………..….6
2.1.1相位移光罩………………………………………………………….………7
2.1.2 阻劑熱流法………………………….…………………………………….....9
2.1.3差式掃描熱量測定法……………………………………………………10
2.2電子束微影系統…………………………………………………........................12
2.2.1.1電子源種類…. ……………………………………....................................12
2.2.1.2電子射束形狀……………………………………………………………..13
2.2.1.3電子射束偏折系統………………………………………………………..14
2.2.1.4電子射束掃描方式………………………………………………….…….14
2.2.1.5晶圓平台移動方式…. …………………………………………………....15
2.2.1.6電子束散射效應…………………………………………………………16
2.3微影製程各步驟目的簡要說明…………………………………………………16
2.3.1上底材…. ……………………………………………………………….17
2.3.2上阻劑………………………………………….……………………..….17
2.3.3軟烤……………………………………………………………………...17
2.3.4曝光……………………………………………………………………...18
2.3.5曝光後烘烤(曝後烤)…. ………………………………………………..18
2.3.6顯影…………………………………….………………………….……..18
2.3.7硬烤…………………………………….………………………………...19
第三章 DSE-1010於電子束微影製程的應用…………………………………....32
3.1 研究動機與目的……………………………………………………………...…32
3.2 實驗藥品與設備………………………………………………………………...33
3.2.1 實驗藥品………………………………………………………………...….33
3.2.2 實驗設備……………………………………………………………………33
3.3實驗步驟……………………………………………………………………..…..35
3.3.1 DSE-1010阻劑厚度對轉速的關西…………………………………………35
3.3.2 DSE-1010阻劑對電子束的敏感度及對比度………………………………35
3.3.3 DSE-1010阻劑應用於電子束微影製程的條件……………………………35
3.3.3.1 最佳曝後烤條件……. ………………………………………………...35
3.3.3.2 最佳軟烤條件……………………………………………………...…..36
3.3.3.3 最佳電子束曝光劑量………………………………………………….36
3.3.3.3 最佳電子束顯影條件………………………………………………….36
3.3.4 DSE-1010阻劑對曝光前後延遲的響應………………………………….36
3.3.4.1 DSE-1010阻劑對曝光前延遲的響應………………………………..36
3.3.4.2 DSE-1010阻劑對曝光後延遲的響應…………………………..……37
 3.3.5 DSE-1010 阻劑經過顯影步驟對線寬的響應……………………………37
 3.3.6DSE-1010 阻劑在高劑量電子束曝光下測試……………………………37
3.3.7 DSE-1010阻劑熱流製程測試……….…………………………………...37
3.3.7.1 DSE-1010阻劑相轉移溫度量測……………………………………38
3.3.7.2 在不同軟烤溫度下對應不同熱流烘烤溫度的洞寬變化情形…….....38
3.3.7.3比較不同熱流烘烤時間的洞寬變化情形及熱流微縮量………….….38
3.3.7.4 比較不同排列比例(Duty Ratio)對洞寬的熱流影響………………38
3.3.8 DSE-1010阻劑蝕刻製程測試………………….. ………………………..38
3.3.8.1 DSE-1010阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的比較………..38
3.3.8.2 比較不同硬烤溫度對DSE-1010阻劑蝕刻率的影響…………...39
3.4 結果與討論……………………………………………………………………...39
3.4.1 DSE-1010阻劑厚度對轉速的關係….. …………………………………….39
3.4.2 DSE-1010阻劑對電子束的敏感度及對比度…………………………….40
3.4.3 DSE-1010阻劑應用於電子束微影製程的條件………………………….41
3.4.3.1 最佳曝後烤條件……………………………………………………41
3.4.3.2 最佳軟烤條件……..………………………………………………….41
3.4.3.3 最佳電子束曝光劑量………………………………………………41
3.4.3.4 最佳電子束顯影條件……………………………………………41
3.4.4 DSE-1010阻劑對曝光前後延遲的響應……………………………………42
3.4.4.1 DSE-1010阻劑對曝光前延遲的響應……………………………….…42
3.4.4.2 DSE-1010阻劑對曝光後延遲的響應………………………………….42
3.4.5 DSE-1010阻劑經過顯影步驟對線寬的響應………………………………42
3.4.6 DSE-1010阻劑在高劑量電子束曝光下變化情形………………………....43
3.4.7 DSE-1010阻劑熱流製程測試……………………………………………....43
3.4.7.1 DSE-1010阻劑熱流溫度量測.. ………………………………………..44
3.4.7.2 在不同軟烤溫度下對應不同熱流烘烤溫度的洞寬變化情形……….44
3.4.7.3比較不同熱流烘烤時間的洞寬變化情形及熱流微縮量……………..44
3.4.8 DSE-1010阻劑蝕刻製程測試….. ………………………………………..45
3.4.8.1 DSE-1010阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的比較………..45
3.4.8.2比較不同硬烤溫度對DSE-1010阻劑蝕刻率的影響…….………46
第四章 奈米粒子在光阻修飾上的應用…………………………………65
4.1 研究動機與目的……………………………………………………………...…65
4.2 實驗藥品與設備………………………………………………………………...65
4.2.1 實驗藥品………………………………………………………………...….65
4.2.2 實驗設備……………………………………………………………………65
4.3實驗步驟……………………………………………………………………..…..67
4.3.1 修飾過DSE-1010阻劑厚度對轉速的關西……………………..…………67
4.3.2 修飾過DSE-1010阻劑對電子束的敏感度及對比度……..………………68
4.3.3修飾過DSE-1010阻劑應用於電子束微影製程的條件……………………68
4.3.3.1 最佳曝後烤條件……. ………………………………………………...68
4.3.3.2 最佳軟烤條件……………………………………………………...…..68
4.3.3.3 最佳電子束曝光劑量………………………………………………….69
4.3.3.4 最佳電子束顯影條件……………………………………………….69
4.3.4 修飾過DSE-1010阻劑經過顯影步驟對線寬的響應……………………69
4.3.5 DSE-1010阻劑與修飾過之DSE-1010阻劑內部結構組成………………69
4.3.6 修飾過DSE-1010阻劑相轉移溫度量測…………………………………69
4.3.7 修飾過DSE-1010阻劑蝕刻製程測試………………….. ………………69
4.3.7.1 修飾過DSE-1010阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的……..69
4.3.7.2比較不同硬烤溫度對修飾過DSE-1010阻劑蝕刻率的影響…....70
4.4 結果與討論 ……………………………………………………………..…….70
4.4.1 修飾過DSE-1010阻劑厚度對轉速的關係………………………………70
4.4.2 修飾過DSE-1010阻劑對電子束的敏感度及對比度…………………….70
4.4.3 修飾過DSE-1010阻劑應用於電子束微影製程的條件…………………..71
4.4.3.1 最佳曝後烤條件………………………………………………………71
4.4.3.2 最佳軟烤條件…………………………………………………………71
4.4.3.3 最佳電子束曝光劑量…………………………………………………71
4.4.4 修飾過DSE-1010阻劑經過顯影步驟對線寬的響應……………………..72
4.4.5 DSE-1010阻劑與修飾過之DSE-1010阻劑內部結構組成……………….72
4.4.6修飾過DSE-1010阻劑相轉移溫度量測……………………………………72
4.4.7修飾過DSE-1010阻劑蝕刻製程測試:…………………………………….72
4.4.7.1修飾過DSE-1010阻劑對熱氧化矽的蝕刻率及蝕刻選擇比的比較..72
4.4.7.2 比較不同硬烤溫度對DSE-1010阻劑蝕刻率的影響 ……………72
第五章 結論……………………………………………………………………….84
5.1實驗結論………………………………………………………………….….…84
5.1.1 DSE-1010於電子束微影製程的應用………………...…………….….84
5.1.2奈米粒子在光阻修飾上的應用…………………………………….…..…84
5.2未來工作與建議………………………………………………………………..84
參考文獻 …………………………………………………….…………………….86


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