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研究生:莊怡芬
研究生(外文):Yi-Fen Chuang
論文名稱:真空紫外微影技術底抗反射層及Fabry-Perot型光罩抗反射層之研究
論文名稱(外文):Study of bottom anti-reflection coated and Fabry-Perot type anti-reflection coated on photomask for vacuum ultraviolet lithography
指導教授:李正中李正中引用關係
指導教授(外文):Cheng-Chung Lee
學位類別:碩士
校院名稱:國立中央大學
系所名稱:光電科學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:62
中文關鍵詞:抗反射層
外文關鍵詞:anti-reflected coating
相關次數:
  • 被引用被引用:3
  • 點閱點閱:193
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  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0

本篇論文分為兩大主題。一個是針對在真空紫外波段(Vacuum Ultraviolet,VUV),光罩抗反射層的研究;另一個是底抗反射(Bottom Anti-Reflection Coating,BARC)技術的研究。
在光罩抗反射層部分,針對真空紫外光波段,成功的設計出一個以Fabry-Perot 結構為基礎的二元式光罩(Binary Mask)抗反射層結構。抗反射層結構是由鉻(Cr)/二氧化矽(SiO2)/鉻(Cr)堆疊所組成的。藉著調整這三層膜層的厚度,在波長193nm及157nm的反射率皆能小於2%。此種光罩抗反射層結構跟傳統的光罩抗反射層二氧化鉻(Cr2O3)/鉻(Cr)最大的不同處在於:頂部的金屬鉻膜將可避免因電子束直寫所造成的電子累積效應。
底抗反射層技術的部分,此底抗反射層為雙層結構(Bilayer),是由二氧化矽(TEOS Oxide,SiO2)/氮化矽(SiN)堆疊所組成的。此兩膜層均是利用電漿輔助化學氣相沈積系統製鍍。藉著控制氮化矽的厚度,在波長157nm或是寬帶(Broadband)157nm~193nm的反射率分別可以降至1%及3%以下。


There are two major parts in this thesis. One is to establish the anti-reflection coating technique for using in vacuum ultraviolet photomask . The other is to investigate the bottom anti-reflection coating.
In the development of the anti-reflection coating technique for photomask applications, we demonstrated an anti-reflection coating structure for vacuum ultraviolet binary mask , which is based on three layers Fabry-Perot structure . The anti-reflection coating structure is composed of Chrome (Cr) / Oxide (SiO2) / Chrome (Cr) stack. After adding different optimization , reflectance of less than 2% at both 193 nm and 157 nm have been achieved. At the three-layer Fabry-Perot structure, the bottom chrome layer provides suitable absorption. By controlling the thickness of the intermediate silicon oxide layer, we can tune the minimum reflection regime to the desired exposure wavelength. The top metal layer can prevent charge accumulation during e-beam writing .The difference between the Fabry-Perot structure and traditional structure Chrome Oxide (Cr2O3 ) / Chrome (Cr) is that the top metal layer can prevent charge accumulation during e-beam writing. The structures are therefore expected to have great potential as antireflective coating structure in high performance binary mask.
In the development of the bottom anti-reflection coating technique , the thinfilm structure is bilayer which is composed of TEOS Oxide (SiO2) / Silicon Nitride (SiN) both are deposited by Plasma Enhanced Chemical Vapor Deposition , PECVD . By changing the thickness of thinfilms , reflectance can be reduced to less than 1% and 3% at 157nm and broadband of 193 nm to 157 nm respectively .


摘要Ⅰ
致謝辭Ⅲ
目錄Ⅳ
圖目錄Ⅶ
表目錄Ⅸ
第一章緒論1
第二章基本原理7
2.1 光罩的抗反射層技術7
2.1.1光學微影成像解析度的限制7
2.1.2空間影像與對比度9
2.1.3 傳統二元式光罩(binary mask)的基本結構與原理10
2.1.4Fabry-Perot 基本結構與原理11
2.1.5二元式光罩材料所需具備的條件12
2.2 抗反射層技術 (Anti-Reflection Coating , ARC)16
2.2.1 光反射引起效應之說明16
2.2.2 抗反射層之設計原理19
2.2.3表層抗反射層23
2.2.4底層抗反射層25
2.3抗反射層材料26
第三章 Fabry-Perot型光罩抗反射層實驗及結果分析27
3.1實驗設備27
3.2控制參數28
3.3 膜層結構28
3.4 實驗步驟29
3.4.1決定二元式光罩合適的材料及其厚度29
3.4.2沈積薄膜29
3.4.3量測R值29
3.5 實驗結果與討論30
3.5.1Fabry-Perot 抗反射結構的膜層分析31
第四章 底層抗反射層實驗及結果分析40
4.1實驗設備40
4.2製程控制參數41
4.3膜層結構41
4.4 實驗步驟42
4.4.1決定底抗反射層合適的材料及其厚度42
4.4.2 沈積薄膜 42
4.4.3量測R值 42
4.5 實驗結果與討論 43
4.5.1針對真空紫外光波段設計之底抗反射層 43
4.5.2針對深紫外及真空紫外設計寬帶底抗反射層50
第五章 結論 56
參考文獻 58


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