臺灣博碩士論文加值系統

由於行動通訊的重要性日漸提升，於是對無線相關電路的需要也自然而然地增加。
而其中一個隨之而來，對無線收發系統設計的主要挑戰為本地振盪訊號。

在這篇論文中，使用具一層多晶矽和六層金屬層0.18亳微米的互補式金氧半矽製作模型，
來模擬所提出電路的性能。而所提出的壓控振盪器電路使用中空式的方型平面螺旋
電感，且朝著低相位雜訊和低功率消耗來設計。經Cadence中的SpectreRF電路模擬軟體
的驗證，本論文所提出的新式電路的確能達成這樣的要求。

在論文中會對提出的低電壓、低功率、低相位雜訊的互補式金氧半單石壓控振盪器做詳
實的描述。這個壓控振盪器建立在具傳統電感-電容槽的負電阻架構上，且使用新式的
背閘極頻率調整電路。它操作在2.4兆赫茲的頻率，且在0.85伏特的電壓下消耗功率僅
有4.6亳瓦。而提出的壓控振盪器在距2.4兆赫茲的載波頻率3百萬赫茲時，相位雜訊
在-132dBc/Hz。

Because the importance of the mobile communication is growing, the demand for
wireless electronics increases. One of the major challenges in the design of the
transceiver system is the frequency synthesis of the local oscillator(LO) signal.
In this thesis, the model of a standard 0.18 µm silicon CMOS process with
single poly and six metal layers is used to verify the proposed work. The design is
done toward the goal of low phase noise and low power consumption. The VCO is
implemented by using the hollow-coil square spiral inductor. From the simulation
results with Cadence SpectreRF, the proposed VCO can do a good job.
A novel low-voltage, low-power, low-phase noise, and CMOS monolithic voltagecontrolled
oscillator (VCO) is described. The oscillator is based upon the classic
LC-tank negative-resistance topology with a new back-gate tuning method. It operates
at the 2.4 GHz while consuming only 4.6mW from 0.85V power supply. The
VCO’s phase noise level is -132 dBc/Hz at 3MHz offset from a 2.4 GHz carrier
with a spiral inductor.

誌謝 i
中文摘要 ii
Abstract iii
List of Figures vi
List of Tables viii
1 Introduction 1
1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Organization of This Thesis . . . . . . . . . . . . . . . . . . . . . . 2
2 The Oscillator Design Concepts 4
2.1 Oscillator Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Phase Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2.1 The Hajimiri Model: A Time-Varying Phase Noise Theory . 6
2.2.2 Phase Noise Mechanisms: In a Feedback System . . . . . . 12
2.3 Resonatorless Oscillators . . . . . . . . . . . . . . . . . . . . . . . 17
2.4 LC-tank Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.4.1 Basic Topologies . . . . . . . . . . . . . . . . . . . . . . . 21
2.4.2 Monolithic Inductors . . . . . . . . . . . . . . . . . . . . . 24
3 Design of the Voltage Controlled Oscillators 29
3.1 Tuning Issues . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.1.1 MOS Varactors . . . . . . . . . . . . . . . . . . . . . . . . 29
3.1.2 Junction Varactors . . . . . . . . . . . . . . . . . . . . . . 34
3.1.3 Back-Gate Tuning . . . . . . . . . . . . . . . . . . . . . . 36
3.2 VCO Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.2.1 Ring Oscillators . . . . . . . . . . . . . . . . . . . . . . . 37
3.2.2 Negative-Conductance Oscillators . . . . . . . . . . . . . . 39
3.3 Quadrature Output . . . . . . . . . . . . . . . . . . . . . . . . . . 42
4 The Proposed VCO and Simulation Results 44
4.1 The Proposed Circuit . . . . . . . . . . . . . . . . . . . . . . . . . 44
4.2 Simulation Results . . . . . . . . . . . . . . . . . . . . . . . . . . 46
5 Conclusion 50
Bibliography 52

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