臺灣博碩士論文加值系統

電漿技術在半導體製程中為一個關鍵的中心技術，舉凡乾蝕刻、薄膜沉積、去光阻、離子植入用之離子源等都與電漿技術相關。而在現今半導體技術已經進入奈米製程時，一個電漿源的設計關乎到整個製程品質的好壞，所以對電漿源要求也就更為嚴格，希望可以提供一個穩定、高密度均勻性佳的電漿。而感應式耦合射頻電漿源可以達到上述的要求。
　　在這篇論文中，著重在感應式耦合電漿源中的匹配網路，因為匹配網路在整個電漿的穩定性以及製程參數誤差容忍度上扮演一個重要角色。而應用於感應式耦合電漿源中的匹配系統主要為標準型L匹配網路、交替型L匹配網路與T型匹配網路。由於入射電磁波與電漿暗區(sheath)之間的非線性交互作用，所以在匹配網路與與腔體(chamber)之間有高階諧波的產生因而造成功率反射。如此為形成電漿不穩定的因素，所以為了解決這個問題我們在匹配網路與感應線圈間加入一個帶通濾波器，以期將該段高階諧波濾除。
　　最後經由模擬計算後，T型匹配網路由於有較廣的匹配範圍與高電路Ｑ值，為我們所比較三種匹配網路中其效能最佳者。濾波器的加入更可提升整體的電路Ｑ值，以避免頻率飄移的產生。

Plasma technology is the key technology in the semiconductor manufacturing, such as dry etching, thin film deposition, PR stripper, and ion implant source etc. While the process technology is going to develop the next generation IC with nano structure, the design of plasma source will be important for the wider process windows especially in low pressure, therefore a high density and more uniform plasma is needed. The inductive coupled plasma source is a strong candidate for the above requirement.
Matching network of plasma generator is the focus of this study, because it is one of the important issue in the plasma stability and process window. The configurations used in the inductive coupled and capacitive plasma source are: standard “L” matching network, atlternate “L” matching network and T matching network. When the RF signal passes through the transmission line and matching network, the multiple frequency signal will exist between matcher and inductive coil which is caused by the nonlinear effects from the interaction between incident wave and dynamic sheath. It is the one of the reasons why the plasma is not quite stable. There is a band pass filter established between the matching network and inductive coil in order to filter off multiple frequency components to prevent them going back to power generator.
Finally, we find the best candidate for the inductively coupled plasma is “T” matching network with band pass filter because it has adjustable wider process window and higher Q factor compared with conventional matcher.

致謝……………………………………………………………i
中文摘要………………………………………………………ii
英文摘要………………………………………………………iii
索引……………………………………………………………iv
圖表目錄 ……………………………………………………...vi
第一章 緒論 …………………………………………………1
第二章 電漿產生器之設計原理 …………………………….6
2.1 電漿的產生……………………………………………..6
2.2 射頻電漿源 ……………………………………………12
2.3 感應式電漿源基本原理 ………………………………..15
2.4 感應式電漿源結構 …………………………………….20
2.5 感應式電漿源之等效電路模型 …………………………22
第三章 RF匹配網路之設計 ………………………………...23
3.1 阻抗匹配的基本理論 …………………………………..23
3.2 品質因數 ……………………………………………...27
3.3 匹配網路的設計法則 …………………………………..33
3.3.1 L型阻抗匹配網路 …………………………………33
3.3.2 T型阻抗匹配網路 …………………………………36
3.3.3感應式耦合電漿源的匹配系統 ……………………….37
3.4 頻率位移之起因 ……………………………………….38
3.5 頻率位移解決之法 …………………………………….39
第四章 L-T型匹配網路計算與模擬 ………………………42
4.1 模擬之簡介 ……………………………………………42
4.2 標準型L匹配網路模擬結果 ……………………………43
4.1.1 標準型Ｌ匹配網路 …………………………………44
4.1.2 標準型L匹配網路加上濾波器 ………………………..49
4.3 交替型L匹配網路模擬結果……………………………54
4.2.1交替型Ｌ型匹配網路 ………………………………..55
4.2.2交替型L匹配網路加上濾波器………………………...60
4.4 T型匹配網路模擬結果………………………………….64
4.3.1 T型匹配網網路…………………………………….65
4.3.2 T型匹配網路加上濾波器…………………………….71
第五章 結果與結論 ………………………………………...77
5.1 結論 ………………………………………………….77
5.2 未來工作 ……………………………………………..79
參考文獻……………………………………………………... 81

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